• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 제14회 신호처리 합동 학술대회 논문집
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• pp.657-660
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• 2001

In this paper, a robust watermarking technique is presented by using a block-based statistics in DCT domain. First, the proposed technique calculates JND threshold value using the global statistics in DCT domain. Then watermark insertion is carried out by inserting one watermark into coefficients which are above the threshold value J within a 2${\times}$2 block. Finally, watermark is estimated by averaging the extracted watermarks from the coefficients which are above the threshold in a window. In experiments it is shown that the proposed techniques can enhance perceptual invisibility and robustness against additive noise and JPEG compression attacks by using the characteristics of JND.

• 한국통신학회논문지
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• 제7권2호
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• pp.55-58
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• 1982

充分統計量(sufficient statistics)이 존재할 때 最適檢出器의 Threshold를 찾는 有用한 方法을 提示하고 예를 들어 說明하였다. 充分統計量이 존재하지 않을 때에도 적절한 檢定統計量(test statistics)을 선택함으로써 suboptimun 檢出器의 設計가 可能함을 보였다. 일반적으로 주어진 檢定統計量에 대한 threshold를 求하는 方法을 提示하고 그 結果가 이미 알려진 理論과 一致됨을 알 수 있다. 結論的으로 광범위한 應用을 전제하고 있다.

• 한국도로학회논문집
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• 제17권1호
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• pp.129-142
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• 2015

PURPOSES : The purpose of this study is to suggest a basis for setting appropriate safety goals specifically related to the threshold zone luminance in a vehicular traffic tunnel. METHODS : In the test, drivers were divided into two groups. One group consisted of all drivers (average drivers) group with an age ratio of drivers holding domestic driver's license and driver group by age to produce threshold zone luminance in the tunnel. The threshold zone luminance produced as a result was used to analyze how it affects the safety level of each driver group and provide a basis for setting an appropriate safety criterion that can be used to determine threshold zone luminance. We used test equipment, test conditions, and ananalysis of threshold zone luminance identical to that reported by ChoandJung(2014) but the values of adaptation luminance in our analys is were expanded to range from100 to $10,000cd/m^2$. RESULTS : Adaptation luminance and threshold zone luminance are found to be related by a quadratic function. The threshold zone luminance needed by older drivers to ensure a certain safety level is significantly higher than that for drivers of other age brackets when adaptation luminance increases. 56% of older drivers are at an increased risk of an accident at the same luminance for which the safety level of average drivers is 75%. The safety level that can be achieved for older drivers increases to above 60% when threshold zone luminance level is set with the goal of attaining a safety level of more than 85% for average drivers. The safety level that can be attained for average drivers is above 90% when the threshold zone luminance is high enough to ensure over 75% in the safety level of older drivers. Results of this study are applicable to highways and others whose designed speed is 100 km/h. CONCLUSIONS : Threshold zone luminance determined on the basis of drivers having average visual ability is of limited value as a performance standard for ensuring the safety of older drivers. Hence, safety level for older drivers should be considered separately from safety levels for drivers with an average ability to avoid risk. Upward adjustment of older drivers' safety level in the process of determining appropriate threshold zone luminance in a vehicular traffic tunnel may bring both tangible and intangible benefit as a result of reducing accidents. However, there is an associated dollar cost arising from installing and operating lights. As a result, the economic impact of these trade-offs should also be considered.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.813-818
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• 1996

Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

• Bulletin of the Korean Chemical Society
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• 제16권9호
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• pp.801-803
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• 1995

• 한국재료학회지
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• 제21권4호
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• pp.196-201
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• 2011

It is known that the relative dielectric constant of insulating polyethylene matrix composites with conducting materials (such as carbon black and metal powder) increases as the conducting material content increases below the percolation threshold. Below the percolation threshold, dielectric properties show an ohmic behavior and their value is almost the same as that of the matrix. The change is very small, but its origin is not clear. In this paper, the dielectric properties of carbon black-filled polyethylene matrix composites are studied based on the effect medium approximation theory. Although there is a significant amount of literature on the calculation based on the theory of changing the parameters, an overall discussion taking into account the theory is required in order to explain the dielectric properties of the composites. Changes of dielectric properties and the temperature dependence of dielectric properties of the composites made of carbon particle and polyethylene below the percolation threshold for the volume fraction of carbon black have been discussed based on the theory. Above the percolation threshold, the composites are satisfied with the universal law of conductivity, whereas below the percolation threshold, they give the critical exponent of s = 1 for dielectric constant. The rate at which the percentages of both the dielectric constant and the dielectric loss factor for temperature increases with more volume fraction below the percolation threshold.

• 천문학논총
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• 제12권1호
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• pp.185-196
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• 1997

We present a code which identifies individual clouds in crowded region using IMFORT interface within Image Reduction and Analysis Facility (IRAF). We define a cloud as an object composed of all pixels in longitude, latitude, and velocity that are simply connected and that lie above some threshold temperature. The code searches the whole pixels of the data cube in efficient way to isolate individual clouds. Along with identification of clouds it is designed to estimate their mean values of longitudes, latitudes, and velocities. In addition, a function of generating individual images (or cube data) of identified clouds is added up. We also present identified individual clouds using a $^{12}CO$ survey data cube of Galactic Anticenter Region (Lee et al. 1997) as a test example. We used a threshold temperature of $5\sigma$ rms noise level of the data With a higher threshold temperature, we isolated subclouds of a huge cloud identified originally. As the most important parameter to identify clouds is the threshold value, its effect to the size and velocity dispersion is discussed rigorously.

• 전자공학회논문지A
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• 제33A권2호
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• pp.40-49
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• 1996

In this paper, we studied channel assignment and handover schemes for the indoor microcell systems. For efficient frequency spectrum reuse we proposed the high quality reassignment (HQR) scheme. Proposed HQR scheme tries to keep the reuse distances small by monitoring C/I of channels being used. To assign a channel for a new or handove call, the scheme checks C/I of all available channels. Then HQR assigns the channel that has C/I near the threshold value, A_TH. The scheme also checks C/I of ongoing calls and continuously reassigns a new channel when needed. It attempts handover not only when C/I gets below a handover threshold value, HO_TH, but also when C/I becomes above a high quality reassignment threshold, H_TH. The performance of the proposed HQR scheme was analyzed by a computer simulation configuraed. The performance of the scheme was also analyzed for various threshold values selected and the results are presented in this paper. The results show that HQR scheme perfomrs better than the scheme adopted for DECT.

• 대한원격탐사학회:학술대회논문집
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• 대한원격탐사학회 1998년도 Proceedings of International Symposium on Remote Sensing
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• pp.159-162
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• 1998

Land cover and land use classification on a huge scale, e.g. national or continental scale, has become more and more important because environmental researches need land cover: And land use data on such scales. We developed a crop field extraction method, which is one of the steps in our land cover classification system for a huge area. Firstly, a crop field model is defined to characterize "crop field" in terms of NDVI value and textual information Textual information is represented by the density of straight lines which are extracted by wavelet transform. Secondly, candidates of NDVI threshold value are determined by "scale-space filtering" method. The most appropriate threshold value among the candidates is determined by evaluating the line density of the area extracted by the threshold value. Finally, the crop field is extracted by applying level slicing to Landsat TM image with the threshold value determined above. The experiment demonstrates that the extracted area by this method coincides very well with the one extracted by visual interpretation.

• Journal of Electrical Engineering and information Science
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• 제2권3호
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• pp.132-138
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• 1997

Electrical characteristics of split-gate flash EEPROM with triple polysilicon is investigated in terms of effects of floating gate and offset gate. In order to search for t the effects of offset gate on programming characteristics, threshold voltage and drain current are studied with variation of control gate voltage. The programming process is believed to depend on vertical and horizontal electric field as well as offset gate length. The erase and program threshold voltage are found to be almost constant with variation of control gate voltage above 12V, while endurance test indicates degradation of program threshold voltage. With increase of offset gate length, program threshold voltage becomes smaller and the drain source voltage just after program under constant control gate voltage becomes higher.