• Progress in Superconductivity
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• v.6 no.1
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• pp.24-31
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• 2004

Magnetic $T_{c}$ of composite superconductors has been studied for providing a standard method. Various magnetization-temperature curves of NbTi, $Nb_3$Sn and Bi-2223 wires were measured using a SQUID magnetometer. Magnetization-temperature curve of zero-field-cooled procedure showed larger values than fie Id-cooled procedure. To obtain higher resolution near the onset temperature, we employed a two-field-direction method which measures a magnetization-temperature curve of a specimen first in positive and then negative fields. Analytical comparison of the magnetic $T_{c}$, with the resistive T$_{c}$ was accomplished for three specimens. The magnetic $T_{c}$/ mettled showed more detailed information on superconducting state of a specimen than the resistive$T_{c}$/ method. We have also studied the field dependence of the magnetic $T_{c}$ from 5 Oe to 120 Oe, however, no significant difference on field strength was found in our three specimensns

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.138-144
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• 1994

Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

• The Pure and Applied Mathematics
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• v.28 no.1
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• pp.55-60
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• 2021

Let M be a real hypersurface in a complex space form Mn(c), c ≠ 0. In this paper we prove that if the structure tensor field is Codazzi type, then M is a Hopf hypersurface. We characterize such Hopf hypersurfaces of Mn(c).

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.548-551
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• 2002

The crystallization of amorphous silicon (a-Si) was achieved using a field aided lateral crystallization (FALC) process at 350 $^{\circ}C$. Under the influence of an electric field, Cu is found to drastically enhance the lateral crystallization velocity of a-Si. When an electric field was applied to the selectively Cu-deposited a-Si film during the heat treatment at temperature as low as 350 $^{\circ}C$, dendrite-shaped crystallization of a-Si progressed toward Cu-free region and the crystallization from negative electrode side toward positive electrode side was accelerated. We identified that 1000${\AA}$ thick a-Si film was completely crystallized by Cu-FALC process at 350 $^{\circ}C$ by TEM analysis.

• Korean journal of applied entomology
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• v.43 no.1
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• pp.27-34
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• 2004

This study was conducted to develop optimal control tactics of the northern root-knot nematode, Meloidogyne hapla, using cultural method and biological agents ｛Bacillus thuringiensis (Bt), Paecilomyces lilacinus and plant extract (Huhjunl)｝ in the fields of Codonopsis lanceolata. Germination of C. lanceolata was susceptible to fosthiazate, but not to Bt or a plant extract. In pot assay, the inhibitory effect of two microbial agents, Bt and Paecilomyces lilacinus, on M. hapla were significant, but less than that of fosthiazate. The plant extract also had significantly inhibitory effect on M. hapla. In field assay, treatments of P lilacinus and fosthiazate resulted in maximal yields and qualities of C. lanceolata. The effect of the plant extract on the yields of C. lanceolata was also better than no treatment. The nematode-occurring condition of the fields before transplanting had significant effect on development of C. lanceolata; nematode-occurring field type gave less yields than nematode-free field type. These results suggest that a cultural control technique using paddy field, microbial pesticides using Bt or P lilacinus, and the plant extract are the promising control tactics against M. hapla in C. lanceolata fields. As a field manual to decrease economical damage of C. lanceolata due to M. hapla, this study suggests that C. lanceolata can be cultured directly in paddy field or in upland field after nematode control using microbial agents or the plant extract.

• Bulletin of the Korean Chemical Society
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• v.33 no.8
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• pp.2689-2693
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• 2012

Single-walled carbon nanotubes (SWNTs) and $C_{60}$-encapsulated SWNTs ($C_{60}@SWNTs$) are introduced to Ru-sensitized photoelectrochemical cells (PECs), and photocurrents are compared between two cells, i.e., an $RuL_2(NCS)_2$/DAPV/SWNTs/ITO cell and an $RuL_2(NCS)_2$/DAPV/$C_{60}@SWNTs$/ITO cell. [L = 2,2'-bipyridine-4,4'-dicarboxylic acid, DAPV = di-(3-aminopropyl)-viologen, and ITO = indium-tin oxide] The photocurrents are increased by 70.6% in the presence of $C_{60}@SWNTs$. To explain the photocurrent increase, the reverse-field emission method is used, i.e., $RuL_2(NCS)_2$/DAPV/SWNTs/ITO cell (or $RuL_2(NCS)_2$/DAPV/$C_{60}@SWNTs$/ITO cell) as an anode and a counter electrode Pt as a cathode in the external electric field. The improved field emission properties, i.e., ${\beta}$ (field enhancement factor) and emission currents in the reverse-field emission with $C_{60}@SWNTs$ indicate the enhancement of the PEC electric field, which implies the improvement of the electron transfer rate along with the reduced charge recombination in the cell.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.155-160
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• 2023

The potential performance benefits of Silicon Carbide(SiC) MOSFETs in high power, high frequency power switching applications have been well established over the past 20 years. In the past few years, SiC MOSFET offerings have been announced by suppliers as die, discrete, module and system level products. In high-voltage SiC vertical devices, major design concerns is the edge termination and cell pitch design Field Limiting Rings(FLR) based structures are commonly used in the edge termination approaches. This study presents a comprehensive analysis of the impact of variation of FLR and JFET region on the performance of a 3.3 kV SiC MOSFET during. The improvement in MOSFET reverse bias by optimizing the field ring design and its influence on the nominal operating performance is evaluated. And, manufacturability of the optimization of the JFET region of the SiC MOSFET was also examined by investigating full-map electrical characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.362-362
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• 2009

$MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.

• 전기의세계
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• v.25 no.5
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• pp.79-87
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• 1976

This paper is to investigate the A.C generation of MHD engine, converting directly the kinetic energy of conductive gas in high temperature to electric power by the effect of magnetic field. It is known that there are at least two kinds of method in A.C MHD power generation; one, by sending stationary plasma flow in an alternating or rotating magnetic field and the other, by transmission of pulse type plasma flow in uniform and constant magnetic field, former method is adopted here. In order to raise the total efficiency of close cycle in combination with nuclear power and MHD genertaion, an argon plasma jet is utilized as heat source, which is not mixed with the seed material, and the design data are obtained for A.C MHD generation in small capacity, but induced voltage and power output have the maximum values, 15 voltages and 7.5W respectively due to plasma flow with low conductivity and weak magnetic field.

• Journal of Magnetics
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• v.16 no.2
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• pp.97-100
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• 2011

Bilayers of soft NiFe (150 nm-420 nm) on hard Ni (150 nm) were prepared by electrodeposition. The process of magnetization reversal in the NiFe/Ni bilayers was then investigated. The hysteresis loop generated by a magnetization reversal of soft NiFe under a positive saturation state of a hard Ni layer shows a shift along the negative field axis, which is clear evidence for the exchange spring effect in the NiFe/Ni bilayers. The dependence of the coercive field $H_c$ and exchange bias field Hex on the thickness of the NiFe layer was also investigated. As the NiFe thickness increases from 150 nm to 420 nm, both $H_c$ and $H_{ex}$ decrease rapidly from $H_c$= 51.7 Oe and $H_{ex}$ = 12.2 Oe, and saturate to $H_c$ = 5.8 Oe and $H_{ex}$ = 3.5 Oe.