• 한국재료학회지
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• 제23권1호
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• pp.35-40
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• 2013

In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage ($V_{oc}$) was observed when the wafer thickness was thinned from $170{\mu}m$ to $50{\mu}m$. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied $V_{oc}$ of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for $50{\mu}m$ c-Si substrate, and 0.704 V for $170{\mu}m$ c-Si. The $V_{oc}$ in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of $V_{oc}$ in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

• 한국재료학회지
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• 제20권11호
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• pp.600-605
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• 2010

In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.36.2-36.2
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• 2009

Low dielectric materials have been great attention in the semiconductor industry to develop high performance interlayer dielectrics with low k for Cu interconnect technology. In our study, the dielectric properties of SiOC /SiO2 thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. Polyphenylcarbosilane was synthesized from thermal rearrangement of polymethylphenylsilane around $350^{\circ}C{\sim}430^{\circ}C$. Characterization of synthesized polyphenylcarbosilane was performed with 29Si, 13C, 1H NMR, FT-IR, TG, XRD, GPC and GC analysis. From FT-IR data, the band at 1035 cm-1 is very strong and assigned to CH2 bending vibration in Si-CH2-Si group, indicating the formation of the polyphenylcarbosilane. Number average of molecular weight (Mn) of the polyphenylcarbosilane synthesized at $400^{\circ}C$ for 6hwas 2, 500 and is easily soluble in organic solvent. SiOC/SiO2 thin film was fabricated on ton-type silicon wafer by spin coating using 30wt % polyphenylcarbosilane incyclohexane. Curing of the film was performed in the air up to $400^{\circ}C$ for 2h. The thickness of the film is ranged from $1{\mu}m$ to $1.7{\mu}m$. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and show a dielectric constant as low as 2.5 without added porosity. The SiOC /SiO2 thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권11호
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• pp.561-565
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• 2004

SiO₂ thin films are fabricated using sol-gel method and dipping method. Gelation time is faster according to increasing the amount of H₂O except H₂O/Si(OC₂H/sub 5/)₄=4. Initial viscosity is highest at H₂O/Si(OC₂H/sub 5/)₄=6. Gelation time is faster according to increasing the amount of CH₃COOH. The relative dielectric constant of thin films decreases a little according to increasing the measuring frequency. The dielectric dissipation factor of thin films increases a little below 100kHz and it increases rapidly over 100kHz.

• 한국세라믹학회지
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• 제27권2호
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• pp.265-273
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• 1990

Fine Si-Al-OH-C coprecipitate powders were prepared from Si(OC2H5)4, Al(i-OC3H7)3, and carbon black by a hydrolysis method before fabrication of Sialon-SiC composite powder by carbothermal reduction at 1350$^{\circ}C$ for 10h under N2/H2 mixed atmosphere. The characterization of the synthesized Sialon-SiC composite powders was performed using XRD, BET, SEM, TEM and particle size analysis methods. The average particle size and specific surface area of the synthesized Sialon-SiC composite powder were 0.13$\mu\textrm{m}$ and 20.1㎡/g, respectively when Z=1 and N2 : H2=50 : 50.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.329-333
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• 2013

SiOC films were prepared by capacitively coupled plasma chemical vapor deposition, and the correlation between the binding energy by X-ray photoelectron spectroscopy and Arrhenius equation for ionization energy was studied. The ionization energy decreased with increase of the potential barrier, and then the dielectric constant also decreased. The binding energy decreased with increase of the potential barrier. The dielectric constant and electrical characteristic of SiOC film was obtained by Arrhenius equation. The dielectric constant of SiOC film was decreased by lowering the polarization, which was made from the recombination between opposite polar sites, and the dissociation energy during the deposition. The SiOC film with the lowest dielectric constant had a flat surface, which depended on how carbocations recombined with other broken bonds of precursor molecules, and it became a fine cross-linked structure with low ionization energy, which contributed to decreasing the binding energy by Si 2p, C 1s electron orbital spectra and O 1s electron orbital spectra. The dielectric constant after annealing decreased, owing to the extraction of the $H_2O$ group, and lowering of the polarity.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.55.1-55.1
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• 2007

• 한국세라믹학회지
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• 제31권2호
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• pp.220-226
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• 1994

The hydrolysis and condensation reactions in the mixed alkoxide solutions of Si(OC2H5)4 and Zr(O-nC3H7)4 with various water contents (1, 2, 4, and 8 in molar ratio to alkoxide, r) and catalysts were examined by rheological measurements and the number average molecular weight in order to explain the shape of the polymer in the mixed alkoxide solutions. It was found that fibers could be drawn in the viscosity range of 1∼100P from the acid-catalyzed solutions with lower water contents of the mole ratio H2O/alkoxide, r 2. On the other hand, crack free bulk gel was formed from the acid-catalyzed solutions including a large amount of water (r 4), and the base-catalyzed solutions. The relation between the intrinsic viscosity [{{{{ eta }}] and the number average molecular weight n, namely [{{{{ eta }}]=Knα, has shown that the acid-catalyzed spinnable solutions (r=1 and 2) have linear polymers and the exponent α's are about 0.56 and 0.81, whereas non-spinnable solutions (r=4 and 8) have three dimensional network polymers or spherical particles and the exponent α's are 0.41∼0.51 and 0.35.

• 한국대기환경학회지
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• 제20권3호
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• pp.317-330
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• 2004

The Purpose of this study was to develop the P $M_{2.5}$ source Profiles, which are mass abundances (fraction of total mass) of a chemical species in P $M_{2.5}$ source emissions. The source categories studied were soil, road dust, gasoline and diesel vehicles, industrial source, municipal incinerator, coal-fired power plant, biomass burning, and marine. The chemicals analyzed were ions. elements. and carbons. From this study, soil source had the crustal components such as Si, hi, and Fe. In the case of road dust. Si, OC, Ca, Fe had large abundances. The abundant species were S $O_4$$^{2-}$, C $l^{[-10]}$ , N $H_4$$^{+}$, and EC in the gasoline vehicle and EC, OC, C $l^{[-10]}$ , and S $O_4$$^{2-}$ in the diesel vehicle. The main components were S $O_4$$^{2-}$, S N $H_4$$^{+}$, and EC in the industrial source using bunker C oil as fuel, C $l^{[-10]}$ , N $H_4$$^{+}$, Fe, and OC in the municipal incinerator source, and Si, Al, S $O_4$$^{2-}$, and OC in the coal -fired power plant source. In the case of biomass burning, OC, EC, and C $l^{[-10]}$ were mainly emitted. The main components in marine were C $l^{[-10]}$ , N $a^{+}$, and S $O_4$$^{2-}$.EX> 2-/.

• 한국세라믹학회지
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• 제28권3호
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• pp.189-196
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• 1991

Si(OC2H5)4, commercial AlN and Y2O3 powder were used as the precusor of Si3N4, AlN, Y2O3, respectively. After Si3N4 powder was synthesized by carbothermal reduction and nitridation at 135$0^{\circ}C$ for 13h in N2 atmosphere, characteristics of synthesized powder and the ceramics sintered at 178$0^{\circ}C$ for 1h under 30MPa were investigated. In order to evaluate the reliability of sintered body, Weibull modulus was investigated. Premixing of carbon black as a reduction agent had no effect on Si(OH)4 formation, and Si3N4 powder synthesized from Si(OC2H5)4 was $\alpha$-Si3N4 single phase. Mechanical properties of sintered body were measured as follows : flexural strength ; 750MPa, fracture toughness ; 3.71Mn/3/2, hardness : 17.4GPa, thermal shock resistence temperature ; $600^{\circ}C$. Flexural strength at room temperature was 750MPa and was retained up to 110$0^{\circ}C$. The Weibull modulus of sintered body was 10.7.