• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.9
• /
• pp.417-422
• /
• 2002

ZnO thin films were deposited on various substrates, such as Si-(111), SiO$_2$(5000 $\AA$ by thermal CVD)/Si-(100), and SiO$_2$(2000 $\AA$ by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO$_2$/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO$_2$buffer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.880-883
• /
• 2003

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

• Journal of the Korean Chemical Society
• /
• v.61 no.4
• /
• pp.179-184
• /
• 2017

In this paper, a $ZnO/SiO_2$ nano-composite was prepared by a simple chemical method at room temperature. For the synthesis of ZnO nanoparticles (NPs), a sonochemical method was used, and $SiO_2$ NPs were prepared by precipitation method. The formation of $ZnO/SiO_2$ NCs was characterized by X-ray diffractometer (XRD) and confirmed by field-emission scanning electron microscopy (FE-SEM) and Fourier transform infra-red spectroscopy(FT-IR). The photocatalytic properties of $ZnO/SiO_2$ NCs formed at different concentrations of $SiO_2$ were evaluated by rhodamine-B dye. It was confirmed that increasing $SiO_2$ concentration resulted in an increase in the photocatalytic property. In addition, the antibacterial activity of $ZnO/SiO_2$ NCs was conducted against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus). As a result, the antibacterial activities of E.coli and S. aureus were increased in the presence of thick SiO NPs layer.

• Korean Journal of Materials Research
• /
• v.21 no.1
• /
• pp.34-38
• /
• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

• Journal of IKEEE
• /
• v.17 no.2
• /
• pp.182-188
• /
• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Journal of the Korean Vacuum Society
• /
• v.20 no.5
• /
• pp.381-386
• /
• 2011

We fabricated the ZnO (zinc oxide)/$SiO_2$ (silicon dioxide) branch hierarchical nanostructures by the e-beam evaporation of $SiO_2$ onto the surface of the electrochemically grown ZnO nanorods on Si substrate, which leads to the self-assembled $SiO_2$ nanorods by oblique angle deposition between vapor flux and vertically aligned ZnO nanorods. In order to investigate the effects of $SiO_2$ deposition on the morphology and optical property of ZnO/$SiO_2$ branch hierarchical nanostructures, the evaporation time of $SiO_2$ was varied under a fixed deposition rate of 0.5 nm/s. The vertically aligned ZnO nanorods on Si substrate exhibited a low reflectance of <10% in the wavelength range of 300~535 nm. For ZnO/$SiO_2$ branch hierarchical nanostructures at 100 s of evaporation time of $SiO_2$, the more improved antireflective property was achieved. From these results, ZnO/$SiO_2$ branch hierarchical nanostructures are very promising for optoelectronic and photovoltaic device applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.8
• /
• pp.711-715
• /
• 2003

In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.367-372
• /
• 2000

ZnO thin films were deposited on amorphous slide glass and $SiO_2$/Si substrates by Facing Targets Sputtering method with sputtering current 0.1~0.8 A, working pressure 0.5~3 mTorr and substrate temperature R.T~$400^{\circ}C$. When the sputtering current was 0.4 A, working pressure was 0.5 mTorr and substrate temperature was 30$0^{\circ}C$, ${\Delta}{\Theta}_{50}$ value of ZnO/glass and ZnO/$SiO_2$/si thin film was $3.8^{\circ}$ and $2.98^{\circ}$, respectively. In these conditions, we knew that ZnO thin film were deposited with good c-axis orientation on amorphous slide glass by FTS system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.140-143
• /
• 2002

In this study, we prepared ZnO/glass and $ZnO/SiO_{2}/Si$ thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated according to changing deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should have to prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and $SiO_{2}/Si$ substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• Journal of the Korean Chemical Society
• /
• v.59 no.5
• /
• pp.397-406
• /
• 2015

ZnO, II-VI group inorganic compound semi-conductor, has been receiving much attention due to its wide applications in various fields. Since the ZnO has 3.37 eV of a wide band gap and 60 meV of big excitation binding energy, it is well-known material for various uses such the optical property, a semi-conductor, magnetism, antibiosis, photocatalyst, etc. When applied in the field of photocatalyst, many research studies have been actively conducted regarding magnetic materials and the core-shell structure to take on the need of recycling used materials. In this paper, magnetic core-shell ZnFe₂O₄@SiO₂ nanoparticles (NPs) have been successfully synthesized through three steps. In order to analyze the structural characteristics of the synthesized substances, X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared spectroscopy (FT-IR) were used. The spinel structure of ZnFe₂O₄ and the wurtzite structure of ZnO were confirmed by XRD, and ZnO production rate was confirmed through the analysis of different concentrations of the precursors. The surface change of the synthesized materials was confirmed by SEM. The formation of SiO₂ layer and the synthesis of ZnFe₂O₄@ZnO@SiO₂ NPs were finally verified through the bond of Fe-O, Zn-O and Si-O-Si by FT-IR. The magnetic property of the synthesized materials was analyzed through the vibrating sample magnetometer (VSM). The increase and decrease in the magnetism were respectively confirmed by the results of the formed ZnO and SiO₂ layer. The photocatalysis effect of the synthesized ZnFe₂O₄ @ZnO@SiO₂ NPs was experimented in a black box (dark room) using methylene blue (MB) under UV irradiation.