• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1155-1159
• /
• 1999

Thin film solar cells on a glass/$SnO_2$ substrate with p-SiC/i-Si/n-Si heterojunction structures were fabricated using a plasma-enhanced chemical-vapor deposition system. The photovoltaic properties of the solar cells were examined with varying the gas phase composition, x=$CH_4/\;(SiH_4+CH_4)$, during the deposition of the p-SiC layer. In the range of x=0~0.4, the efficiency of solar cell increased because of the increased band gap of the p-SiC window layer. Further increase in the gas phase composition, however, led to a decrease in the cell efficiency probably due to in the increased composition mismatch at the p-SiC/i-Si layers. As a result, the efficiency of a glass/$SnO_2$/p-SiC/i-SiC/i-Si/n-Si/Ag thin film solar cell with $1cm^2$ area was 8.6% ($V_{oc}$=0.85V, $J_{sc}$=16.42mA/$cm^2$, FF=0.615) under 100mW/$cm^2$ light intensity.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.1
• /
• pp.14-19
• /
• 1999

Using a single precursor of hexamethyldisilane $(Si_{2}(CH_{3})_{6})$, $\beta$-SiC film was successfully deposited on a Si substrate at $1100^{\circ}C$ by a chemical vapor deposition method. Selectivity of SiC deposition on a Si substrate partially covered with a masking material was investigated by introducing HCl gas into hexamethyldisilane/$H_{2}$ gas system during the deposition. The schedule of the precursor and HCl gas flows was modified so that the selectivity of SiC deposition between a Si substrate and a mask material should be improved. It was confirmed that the selectivity of SiC deposition was improved by introducing HCl gas. Also, the pulse gas flow technique was effective to enhance the selectivity.

• The Korean Journal of Ceramics
• /
• v.3 no.1
• /
• pp.47-51
• /
• 1997

The dense sintered bodies of Si/SiC composite with various Si contents could be fabricated by changing the green density in the forming process. The Si/SiC/graphite composites with various graphite contents could be also fabricated by changing a graphite content in the starting composition. Their mechanical and tribological properties were characterized and wear mechanism was also studided. The hardness and strength of the Si/SiC and the Si/SiC/graphite were decreased with increasing the contents of free Si and graphite, respectively. However, the friction coefficient and specific wear rate had no specific relations to their hardness and strength. Adhesion of free Si was a main factor to determine a wear resistance of the Si/SiC composite. In the case of the Si/SiC/graphite, solid lubricationl and liquid reservoir of the graphite particles played the main role of the reduction of the friction force. In the torque test to estimate the possibility of practical of practical applications, the value of torque between the Al2O3 disk and Si/SiC/graphite disk was 1/6 lower compared with two $Al_2O_3$ disks on the basis of 100,000 cycles.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.2
• /
• pp.197-206
• /
• 1997

A SiC epilayer on the 6H-SiC crystal substrate was grown by chemical vapor deposition (CVD). The crystal structure of the SiC epilayer was investigated by using the X-ray diffraction patterns and the Roman scattering spectroscopy. The SiC epilayer on the 6H-SiC substrate was grown to be homoepilayer by CVD. In order to distinguish a certain SiC polytype mixed in the SiC crystal grown by the modified Lely method, we have calculated the X-ray diffraction intensities and Brags angles of the typical SiC crystal powders. By comparing the measured X-ray diffraction pattern with the calculated ones, it was identified that the SiC crystal grown by the modified Lely method was the 6H-SiC crystal mixed some 15R-SiC.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2012.10a
• /
• pp.110-114
• /
• 2012

We studied on the nondestructive evaluation of the elastic wave signal of SiC ceramics and SiC/SiC composite ceramics under monotonic tensile loading. The elastic wave signal of cross and unidirectional SiC/SiC composite ceramics were obtained by pencil lead method and bending test. It was applied for the time-frequency method which used by the discrete wavelet analysis algorithm. The time-frequency analysis provides time variation of each frequency component involved in a waveform, which makes it possible to evaluate the contribution of SiC fiber frequency. The results were compared with the characteristic of frequency group from SiC slurry and fiber. Based on the results, if it is possible to shift up and design as a higher frequency group, we will can make the superior material better than those of exiting SiC/SiC composites.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
• /
• 2006.11a
• /
• pp.158-161
• /
• 2006

SiC materials have been extensively studied for high temperature components in advanced energy conversion system and advanced gas turbine. However, the brittle characteristics of SiC such as law fracture toughness and law strain-to fracture impose a severe limitation on the practical applications of SiC materials. SiC/SiC composites can be considered as a promising candidate in various structural materials, because of their good fracture toughness. In this composite system, the direction of SiC fiber will give an effect to the mechanical properties. It is therefore important to control a properdirection of SiC fiber for the fabrication of high performance SiC/SiC composites. In this study, unidirection and two dimension woven structures of SiC/SiC composites were prepared starting from Tyranno SA fiber. SiC matrix was obtained by nano-powder infiltration and transient eutectoid (NITE) process. Effect of microstructure and density on the sintering temperature in NITE-SiC/SiC composites are described and discussed with the fiber direction of unidirection and two dimension woven structures.

• Journal of Welding and Joining
• /
• v.15 no.5
• /
• pp.104-114
• /
• 1997

The microstructure and bond strength were investigated on the SiC/SiC and SiC/mild steel joints brazed by Ag-5at%Ti alloy. Ag-5at%Ti-2at%Fe and -5at%Fe brazing alloys were also used to see the effects of Fe addition on the bond strength of SiC/SiC brazed joints. Brazing temperature and brazing gap were selected and examined as brazing variables. The microstructure of SiC/SiC brazed joints was affected by Fe addition to the Ag-5at%Ti alloy, but the bond strength was not. Increasing brazing temperature also changed the microstructure of $Ti_5Si_3$ reaction layer and brazing alloy matrix of the SiC/SiC and SiC/mild steel joints, but not the bond strength. Brazing gap had a great effects on the bond strength. Decreasing brazing gap from 0.2 mm to 0.1 mm in SiC/SiC brazing increased the bond strength from 187 MPa to 263 MPa and, in SiC/mild steel brazing, from 189 MPa to 212 MPa. It was concluded that the most important parameter on the bond strength in SiC/SiC and SiC/mild steel brazing was the relative ratio between brazing gap and specimen size.

• Composites Research
• /
• v.32 no.3
• /
• pp.148-157
• /
• 2019

In this study, $C_f/SiC$, $SiC_f/SiC$ and $C_f-SiC_f/SiC$ ceramic composites reinforcing carbon fiber, SiC fiber and hybrid fiber were fabricated by hybrid TGCVI and PIP process. After the thermal shock cycle, 3-point bending and Oxy-Acetylene torch test, their mechanical behavior, oxidation and erosion resistance were evaluated. The $C_f/SiC$ composite showed a decrease in mechanical property along with increasing temperature, a pseudo-ductile fracture mode and a large quantity of erosion. The $SiC_f/SiC$ composite exhibited stronger mechanical property and lower erosion rate compared to the $C_f/SiC$, but brittle fracture mode. On the other hand, hybrid type of $C_f-SiC_f/SiC$ composite gave the best mechanical property, more ductile failure mode than the $SiC_f/SiC$, and lower erosion rate than the $C_f/SiC$. During the Oxy-Acetylene torch test, the $SiO_2$ formed by reaction of the SiC matrix with oxygen prevented further oxidation or erosion of the fibers for $C_f-SiC_f/SiC$ and $SiC_f/SiC$ composites particularly. In conclusion, if a hybrid composite with low porosity is prepared, this material is expected to have high applicability as a high temperature thermo-structural composite under high temperature oxidation atmosphere by improving low mechanical property due to the oxidation of $C_f/SiC$ and brittle fracture mode of $SiC_f/SiC$ composite.

• Journal of the Korean Ceramic Society
• /
• v.29 no.8
• /
• pp.587-592
• /
• 1992

Sheets of SiC-SiC whisker maxed matrix were prepared from the mixed slurry of SiC whisker and SiC matrix by the rolling method. With the increase of SiC whisker, the pore size, the porosity and the phosphoric acid absorbency of the matrix were increased, while the bubble pressure was decreased. The activation energy for the transfer of H+ ion was decreased with the increase of mixing ratio of SiC whisker to the SiC matrix from the measurement of hydrogen ion conductivity. The activation energy was evaluated as 0.25 eV when the mixing ratio of SiC whisker to the SiC matrix was 1 : 2 and the activation energy was 0.16 eV for the 2 : 1 matrix. It means that SiC whisker matrix contributes to attain a better microstructure for the diffusion of hydrogen ion. From the measurement of single cell performance of matrix with various mixing ratio, it is concluded that if SiC-SiC whisker maxed matrix has a sufficient bubble pressure to prevent the crossover of H2 gas, the current density of a fuel cell is increased with the increase of acid absorbency of the matrix. Current density was improved from 140 mA/$\textrm{cm}^2$ for 0.25 mm thickness of matrix to 170 mA/$\textrm{cm}^2$ for the 0.20 mm one at 700 mV.

• Journal of the Korean Ceramic Society
• /
• v.36 no.1
• /
• pp.55-60
• /
• 1999

${\beta}$-SiC thin film was deposited on a Si substrate without buffer layer using a single precursor of Hexamethyldisilane (Si2(CH3)6) by chemical vapor deposition method. HCI gas was introduced into hexamethyldisilane /H2 gas mixture, and the feeding schedule of HCI and precursor gases was modified in order to enhance the selectivity of SiC deposition between a Si substrate and a SiO2 mask. The effect of HCI gas on the surface roughness of the SiC film was investigated and typical electrical properties of the SiC film were also investigated by Hall measurement.