• Korean Journal of Food Science and Technology
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• v.17 no.5
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• pp.331-335
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• 1985

Series of study were conducted to develop a method for longterm storage of chest-nut with preserving it's taste and freshness. Experiments were carried out with Korean chest-nut (Castanea crenata var. Okkwang) sealed in polyethylene (P.E) film stored under the ambient and low temperature. Summarized results are as follow: After the harvest, $CO_2$ produced by chest-nut at the early storage was increased with temperature increase. Q10 mg/kg/day, the temperature index of $CO_2$production, by chest-nut ranged 2.4-2.7. It was available to store chest-nut in good condition with 8-15% total loss upto the following may at the ambient temperature sealed in 0.03 mm P.E. film, and upto the following july at the low temperature if sealed in 0.03 or 0.05 mm P.E. film. Throughout the period from one month after the innitiation upto the end of the storage, the rate of $CO_2$and $O_2$ was maintained near the optimum condition for the CA storage of chest-nut. The taste of chest-nut was improved during the storage due to increased reducing-sugar and decreased wate soluble tannin. However, the taste become bitter and unacceptable from the early stage of the storage when used the thicker P.E. film (than above mentioned) for the sealing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.3
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• pp.105-108
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• 2008

Four different thin films were made by depositing PZ and PT in different stacking sequences. PZ and PT phases are preferably co-existed in sample A and C that are annealing after each coatings. The sample B and D, on the other hands, have tendency toward the PZT phase after co-firing the sample. The sample B that started from PT stacking first was more stable PZT phase than that of PZ first sample D.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.6
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• pp.281-286
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• 2002

The temperature accelerated dielectric breakdown strength of on-wafer low-k dielectric polymer films with thicknesses ranging from 94 nm to 1141 nm is investigated by using the current-voltage characteristic measurements with MIS structures. The temperature dependence of dielectric strength is demonstrated to be Arrhenious for all thicknesses. However, the activation energy is found to be strongly thickness dependent. It follows an exponential relationship rather than being a single value, i.e., the activation energy increase significantly as film thickness increases for the thickness below 500 nm, but it is almost constant for the thickness above 500 nm. This relationship suggests that the change of the activation energy corresponding to different film thickness is closely related to the temperature dependence of the electron trapping/detrapping process in polymer thin films, and is determined by both the trapping rate and the detrapping rate. Thinner films need less energy to form a conduction path compared to thicker films. Hence, it leads to smaller activation energy in thinner films, and the activation energy increases with the increase in film thickness. However, a nearly constant value of the activation energy is achieved above a certain range of film thickness, indicating that the trapping rate and detrapping rate is almost equal and eventually the activation energy approaches the value of bulk material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.478-480
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• 2001

Fe-base amorphous films exhibit large saturation magnetostriction and soft magnetic Properties, which make them suitable for strain sensor applications. Most important material properties for the performance of these elements are the superior soft magnetic properties, such as high permeability and small coercive force, as well as magnetoelastic properties. It is well known that the strain generated in film deposition and/or post-heat treatment processes is one of important material properties, which effects on the soft magnetic properties of the film via magnetoelastic coupling. In this study, the effect of an isotropic strain in plane of magnetic films have been performed experimently. Amorphous films with the composition of (F $e_{90}$ $Co_{10}$)$_{78}$S $i_{l2}$ $B_{10}$ were employed in this study. The film with 5${\mu}{\textrm}{m}$ thick was deposed onto the polyimide substrate with 50${\mu}{\textrm}{m}$ thick by virtue of RF sputtering. The film was subject to post annealing with a static magnetic field with 500Oe magnetic field intensity at 35$0^{\circ}C$ for 1 hour. The polyimide substrate with the film was bonded with an adhesive on PZT piezoelectric substrate with 600${\mu}{\textrm}{m}$ thick in applying voltage of 500V. The change in MH loops of films due to the isotropic strain was measured by using VSM. The coercive force was evaluated from MH loops. It has shown in the results that M-H loops of films are subject to change considerably with a dc voltage, resulting of the magnetization rotation from normal to plane direction as the applied voltage is changed from 500V to 250V.50V.V.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1462-1464
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• 1998

Poly-Si TFT(Thin Film Transistor) is a electronic device that can be applied to the field of large area electronics such as AMLCD. We have fabricated the poly-Si TFT with lateral body terminal that is counter-doped body electrode and investigated the electrical characteristics of it. The lateral body terminal being short with s terminal, we have measured the transfer charac (Vg-ld) and the output characteristic (Vd-ld) fabricated devices. The measured result showe only that leakage current in OFF-state was re and Kink effect in ON-state was suppressed bu that in output characteristic curve the output Id was sustained constantly with the output v Vd in the saturation region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.529-532
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• 2003

Quench behavior of resistive superconducting fault current limiters (SFCLs) with various pattern shapes was investigated. The pattern shapes employed were meander, bi-spiral, and spiral shapes of identical line width, gap and margin. SFCLs were fabricated from YBCO thin films grown on two-inch diameter $Al_2O_3$ substrates under the same conditions. Resistance rise of current limiting elements was low at a spiral shape before the whole quench completion, which may act as a disadvantage for simultaneous quench in serial connection between current limiting elements, but the temperature tended to have similar values at higher voltages. On the other hand, bi-spiral shape was severe at insulation level between current limiting lines. When these aspects were considered, we concluded that a meander shape was appropriate to design for a resistive SFCL based on thin films except the concentration of electric field at edge areas of strip lines.

• Electronics and Telecommunications Trends
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• v.27 no.5
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• pp.109-125
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• 2012

액정 디스플레이의 산업 규모는 놀라운 속도로 확대되고 있다. 그 원동력이 된 것이 박막 트랜지스터(Thin Film Transistor: TFT) 기술의 발전에 있다. 비정질 실리콘(Amorphous Silicon: a-Si) TFT 기술은 대형 액정 TV를 탄생시키고, 저온 폴리실리콘 TFT는 휴대전화 등의 중소형 디스플레이와 AMOLED의 핵심 기술이 되었다. 또한 다양한 TFT 기술 seeds가 계속해서 출현하여 정보 인프라와 생활 스타일에 맞춘 새로운 정보기기의 출현을 예감시키고 있다. 새로운 응용제품의 요구는 새로운 기술 개발의 견인차가 되고 있다. 최근에는 이러한 요구에 따라 산화물 TFT, 마이크로 결정실리콘(microcrystalline Si: ${\mu}c-Si$) TFT, 유기물 TFT 등의 기술도 활발하게 연구개발되고 있다. 본고에서는 지금까지의 TFT 기술 개발의 발전사를 뒤돌아보고 지금부터의 발전 방향을 박막 트래지스터 기술 이노베이션 관점으로부터 전망하였다.

• Journal of the Korean Society of Food Science and Nutrition
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• v.44 no.5
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• pp.739-745
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• 2015

To maintain quality of Delaware grapes during storage, grape samples were treated with 0.1% chitosan dissolved in 0.5% acetic acid, packaged with low density polyethylene film, and stored at 4 or $20^{\circ}C$ for 12 days. Chitosan treatment reduced initial populations of yeast and molds in grapes by 1.86 log CFU/g compared to that of the control. During storage, oxygen contents in packages of samples decreased, whereas carbon dioxide contents increased. In addition, regardless of storage temperature, changes in oxygen and carbon dioxide concentrations of grapes treated with chitosan were lower than those of the control. Hardness of samples decreased, and Hunter L, a, and b values were not significantly different among treatments. Regarding pH and total soluble content, grapes stored at $4^{\circ}C$ maintained pH and had greater total soluble content than those stored at $20^{\circ}C$. These results suggest that chitosan treatment and low temperature storage can be useful for maintaining microbiological safety and quality of Delaware grapes during storage.

• Journal of Practical Agriculture & Fisheries Research
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• v.23 no.1
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• pp.67-80
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• 2021

We analyzed the effect of planting site (elevation: high, middle, low) and temperature condition of orchard on the frost injury occurrence and storage characteristics of persimmon (Diospyros kaki cv. 'Fuyu) fruits under an early fall frost at two orchards, Changwon (A) and Changnyeong (B), Gyeongsangnam-do Korea. Also, the fruits picked at Nov. 5 and Nov. 20 were MA stored to investigate the quality and chilling injury of fruits. On 2-way factor analysis, both planting elevation and orchard factor had not a significant effect on fruit characteristics (weight, firmness, soluble solid), while planting elevation factor did on the skin color (hunter 'a')(p<0.05). A fruit skin coloration at orchard A was faster than that at orchard B. At low elevation of orchard B, 2% fruits were frost injured at harvest season. On LDPE film MA storage with the fruits harvested at Nov. 5 and Nov. 20, the fruits at orchard A had higher fruit firmness than those of orchard B during storage. In addition, the 73% (orchard A) and 85%(orchard B) fruits harvested at Nov. 5 showed no chilling injury 80 days after storage. However, At harvest of Nov, 20 (after incidence of frost), only the 14% fruits of orchard B had no the chilling disorder 80 days after storage, even though 76% fruits at orchard A did.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1456-1458
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• 1998

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.