• Journal of IKEEE
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• v.23 no.3
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• pp.832-838
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• 2019

In this paper, 4H-SiC MOSFET, the next generation power semiconductor device, was studied. In particular, Semi-SJ MOSFET structures with improved electrical characteristics than conventional DMOSFET structures were proposed in the class of 3300V, and static characteristics of conventional and proposed structures were compared and analyzed through TCAD simulations. Semi-SuperJunction MOSFET structure is partly structure that introduces SuperJunction, improves Electric field distribution through the two-dimensional depletion effect, and increases breakdown voltage. Benefit from the improvement of breakdown voltage, which can improve the on resistance as high doping is possible. The proposed structure has a slight reduction in breakdown voltage, but has an 80% decrease in on resistance compared to the conventional DMOSFET structure, and a 44% decrease in on resistance compared to the Current Spreading Layer(CSL) structure that improves the conventional DMOSFET structure.

• Journal of Surface Science and Engineering
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• v.46 no.2
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• pp.93-97
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• 2013

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with co-doping and blue/co-doping emitting layer (EML) structures were fabricated using a host-dopant system. The total thickness of light-emitting layer was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir(acac)$ in UGH3, respectively. In case of co-doping structure, applying micro lens array film showed efficiency improvement from the current efficiency 78.5 cd/A and power efficiency 40.4 lm/W to the current efficiency 131.1 cd/A and power efficiency 65 lm/W and blue / co-doping structure showed efficiency improvement from the current efficiency 43.8 cd/A and power efficiency 22 lm/W to the current efficiency 69 cd/A and power efficiency 32 lm/W.

• ETRI Journal
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• v.45 no.3
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• pp.462-478
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• 2023

In quantum computing, the use of Pauli frames through software traces of classical computers improves computation efficiency. In previous studies, error correction and Pauli operation tracking have been performed simultaneously using integrated Pauli frames in the physical layer. In such a complex processing structure, the number of simultaneous operations processed in the physical layer exponentially increases as the distance of the surface code encoding logical qubit increases. This study proposes a Pauli frame management architecture partitioned into two layers for a lattice surgery-based surface code and describes its structure and operation rules. To evaluate the effectiveness of our method, we generated a random circuit according to the gate ratios constituting the commonly known quantum circuits and compared the generated circuit with the existing Pauli frame and our method. Simulations show a decrease of about 5% over traditional methods. In the case of experiments that only increase the code distance of the logical qubit, it can be seen that the effect of reducing the physical operation through the logical Pauli frame becomes more important.

• Journal of Institute of Control, Robotics and Systems
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• v.4 no.2
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• pp.264-272
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• 1998

This paper proposes a fault detection and recovery mechanism for a fault-tolerant Mini-MAP system, and provides detailed techniques for its implementation. This paper considers the fault-tolerant Mini-MAP system which has dual layer structure from the LLC sublayer down to the physical layer to cope with the faults of those layers. For a good fault detection, a redundant and hierarchical fault supervision architecture is proposed and its implementation technique for a stable detection operation is provided. Information for the fault location is provided from data reported with a fault detection and obtained by an additional network diagnosis. The faults are recovered by the stand-by sparing method applied for a dual network composed of two equivalent networks. A network switch mechanism is proposed to achieve a reliable and stable network function. A fault-tolerant Mini-MAP system is implemented by applying the proposed fault detection and recovery mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.80-83
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.5 no.4
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• pp.327-332
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• 2005

We investigatea new fuzzy-neural networks-Hybrid Fuzzy set based polynomial Neural Networks (HFSPNN). These networks consist of genetically optimized multi-layer with two kinds of heterogeneous neurons thatare fuzzy set based polynomial neurons (FSPNs) and polynomial neurons (PNs). We have developed a comprehensive design methodology to determine the optimal structure of networks dynamically. The augmented genetically optimized HFSPNN (namely gHFSPNN) results in a structurally optimized structure and comes with a higher level of flexibility in comparison to the one we encounter in the conventional HFPNN. The GA-based design procedure being applied at each layer of gHFSPNN leads to the selection leads to the selection of preferred nodes (FSPNs or PNs) available within the HFSPNN. In the sequel, the structural optimization is realized via GAs, whereas the ensuing detailed parametric optimization is carried out in the setting of a standard least square method-based learning. The performance of the gHFSPNN is quantified through experimentation where we use a number of modeling benchmarks synthetic and experimental data already experimented with in fuzzy or neurofuzzy modeling.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.325-333
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• 2003

An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.2
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• pp.60-69
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• 1998

Polysilicon surface mdoification tecnique is developed to reduce the sticking of microstructures fabricated by micromachining. Modified anti-sticking grain holes are simply formed by two-step dry eth without additional photolithography nor deposition of thin films. Both process-induced sticking and in-use sticking are successfully reduced more than two times by adopting grain holed polysilicon substrate. A sticking model for cantilever beam is derived. This model includes bending moment stems from stress gradient along the thickness directionof structural polysilicon. Because the surface tension of rinse liquid and the surface energy of the solids to be stuk tend to decrease in recently developed anti-sticking techniques, the effect of stress gradient will play an important role to analyze the sticking phenomena. Effect of the temperature during post-release rinse and dry is modelled and verified experimentally. Based on developed anti-sticking polysilicon structure and the sticking model, sticking of microstructure, fabricated by simple wet process including sacrificial layer etch and rinse with deionized water without special equimpment for post-release rinse and dry was alleviated more than 3.5 times.

• Journal of Mechanical Science and Technology
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• v.20 no.1
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• pp.147-157
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• 2006

This paper represents a numerical study of the flow field due to the interactions between a pair of vortices produced by vortex generators in a rectangular channel flow. In order to analyze longitudinal vortices induced by the vortex generators, the pseudo-compressibility method is introduced into the Reynolds-averaged Navier-Strokes equations of a 3-dimensional unsteady, incompressible viscous flow. A two-layer $k-{\epsilon}$ turbulence model is applied to a flat plate 3-dimensional turbulence boundary to predict the flow structure and turbulence characteristics of the vortices. The computational results predict accurately the vortex characteristics related to the flow field, the Reynolds shear stresses and turbulent kinetic energy. Also, in the prediction of skin friction characteristics the computational results are reasonably close to those of the experiment obtained from other researchers.

• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.6
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• pp.823-829
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• 1986

The Large-scale structure of the circular jet in the transition region, which influences the subsequent flow in the turbulent region, was studied experimentally. Measuring equipments are composed of the two channel hot-wire anemometer, the computer controlled two-directional traverse mechanism, the data acquisition system, and FFT-analyzer. The circular jet has 50mm diameter. The mean velocity distribution, the velocity fluctuation, the auto 'cross correlations and the power spectra were acquired at moderate Reynolds number of 10$^{4}$. And the VITA method was used to measure the convection velocity of Large-scale eddy. The phase of u'is in advance of that of v'in all regions. .over bar. $R_{u}$(.tau.=0) is approximately zero in the potential core region, but a small regular deviation is observed. At a position in the mixing layer region the convection velocity is different along the part of the eddy, and in this experiment the convection velocity of the inner region is larger than the outer region. The averge convection velocity of the eddy along y/D=0 was approximately constant in the transition region.D=0 was approximately constant in the transition region.