• Title/Summary/Keyword: a two-layer structure

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Microgripper driven by E-T(Electro-Thermal) actuator (E-T(Electro-Thermal) 액츄에이터를 이용한 microgripper)

  • Park, Ho-Joon;Lee, Hyun-Ki;Pak, Jung-Ho
    • Proceedings of the KIEE Conference
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    • 1999.07g
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    • pp.3325-3327
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    • 1999
  • A microgripper driven by E-T (electro-thermal) actuators has been designed and fabricated by surface micromachining. This microgripper consists of two E-T actuators. Each actuator has two arms with different widths joined at the end to form a 'U' shape. The wider 'cold' arm has a narrow flexure at the end (anchor or electrode side) for easy bending, This actuator can be fabricated with only two masks - one for the sacrificial layer and the other for the poly-Si structure layer. An E-T actuator bends its arm due to unequal thermal expansion between the 'cold' arm and the 'hot' arm, This actuator tip moves laterally in an arcing motion towards the cold arm side when the structure is unevenly heated by the applied current. Therefore each microgripper is actuated inwards and can hold a micro object. The fabricated E-T actuator was operated in the range of $2{\sim}12V$ and $1{\sim}5mA$. and maximum tip displacement was $13.6{\mu}m$. This device may become useful in many applications because an E-T actuator can be designed and fabricated easily, and obtain large displacement.

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Staggered and Inverted Staggered Type Organic-Inorganic Hybrid TFTs with ZnO Channel Layer Deposited by Atomic Layer Deposition

  • Gong, Su-Cheol;Ryu, Sang-Ouk;Bang, Seok-Hwan;Jung, Woo-Ho;Jeon, Hyeong-Tag;Kim, Hyun-Chul;Choi, Young-Jun;Park, Hyung-Ho;Chang, Ho-Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.4
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    • pp.17-22
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    • 2009
  • Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

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Development of Capacitance-type Humidity Sensors Using Porous Silicon Layer (다공질 실리콘층을 이용한 정전용량형 습도센서의 개발)

  • Kim, Seong-Jeen;Lee, Ju-Hyuk;Yoon, Yeo-Kyung;Choi, Bok-Gil
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.1014-1016
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    • 1998
  • A capacitance-type humidity sensor using porous silicon layer is developed. The unique property of this sensor is a structure which has electrodes on the surface of the wafer like a general IC device. To do this. the sensor was fabricated using process such as localized formation of porous silicon, oxidation of porous silicon layer, and etching of oxidized porous silicon layer. The measurement of humidity-sensing ability was done for two type of sensors using porous silicon layer formed in 25 and 35% HF solutions, respectively. As the result, the former sensors showed larger value and variation of capacitance for the relative humidity.

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Structure and Histochemistry of Skin of Mud Loach, Misgurnus anguillicaudatus (Pisces, Cobitidae), from Korea (한국산 미꾸리 Misgumus anguillicaudatus (Pisces, Cobitidae) 피부 구조 및 조직화학적 특징)

  • Park, Jong-Young;Kim, Ik-Soo
    • Korean Journal of Ichthyology
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    • v.11 no.2
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    • pp.109-116
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    • 1999
  • The structure of skin of a mud loach Misgurnus anguillicaudatus was described in relation with their histochemical nature from four regions of the skin. The epidermis has a strongly thick layer of two glandular cells, consisting of a elongate mucous cell and club cell, and a thin layer of superficial layer. The secretion of the elongated mucous cell was acid mucopolysaccharides in nature but the club cell did not give any histochemical reaction. A well defined lymphatic system, comprising small lymphocytes was present in the stratum germinativum layer of the epidermis. A pit organ of a pear-shaped structure was present below the epithelial cells and lie directly on the basement membrane. The organ has blood vessels serving the sense organs of the epidermis. There was a definite area showing acid mucopolysaccharides in the stratum laxum layer of the dermis. Small scales are present deep in the dermis except the top of the head. A great number of blood capillaries were found just under basement membrane. These structural features of skin in M. anguillicaudatus seem to be closely related with cutaneous respiration using air.

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CRITICAL HEAT FLUX FOR DOWNWARD-FACING BOILING ON A COATED HEMISPHERICAL VESSEL SURROUNDED BY AN INSULATION STRUCTURE

  • Yang, J.;Cheung, F.B.;Rempe, J.L.;Suh, K.Y.;Kim, S.B.
    • Nuclear Engineering and Technology
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    • v.38 no.2
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    • pp.139-146
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    • 2006
  • An experimental study was performed to evaluate the effects of surface coating and an enhanced insulation structure on the downward facing boiling process and the critical heat flux on the outer surface of a hemispherical vessel. Steady-state boiling tests were conducted in the Subscale Boundary Layer Boiling (SBLB) facility using an enhanced vessel/insulation design for the cases with and without vessel coatings. Based on the boiling data, CHF correlations were obtained for both plain and coated vessels. It was found that the nucleate boiling rates and the local CHF limits for the case with micro-porous layer coating were consistently higher than those values for a plain vessel at the same angular location. The enhancement in the local CHF limits and nucleate boiling rates was mainly due to the micro-porous layer coating that increased the local liquid supply rate toward the vaporization sites on the vessel surface. For the case with thermal insulation, the local CHF limit tended to increase from the bottom center at first, then decrease toward the minimum gap location, and finally increase toward the equator. This non-monotonic behavior, which differed significantly from the case without thermal insulation, was evidently due to the local variation of the two-phase motions in the annular channel between the test vessel and the insulation structure.

A Study on the Luminous Properties of the White-light-emitting Organic LED with Two-wavelength using DPVBi/Alg3:Rubrene Structure (DPVBi/Alg3:Rubrene 구조를 사용한 2-파장 방식의 백색유기발광소자의 발광특성에 관한 연구)

  • 조재영;최성진;윤석범;오환술
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.7
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    • pp.616-621
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    • 2003
  • The white-light-emitting organic LED with two-wavelength was fabricated using blue emitting material(DPVBi) and a series of orange color fluorescent dye(Rubrene) by vacuum evaporation processes. The basic structure of white-light-emitting OLED was ITO/NPB(150$\AA$)/DPVBi(150$\AA$)/Alq$_3$:Rubrene(150$\AA$)/BCP(100$\AA$)/Alq$_3$(150$\AA$)/Al(600$\AA$). The changes of the CIE coordiante strongly depended on the doping concentration of Rubrene and the thickness of NPB layer. We obtained the white-light-emitting OLED close to the pure white color light and the CIE coordinate of the device was (0.315, 0.330) at applied voltage of 13V when the doping concentration of Rubrene was 0.5wt% and the thickness of NPB layer is 200$\AA$. At a current of 100mA/$\textrm{cm}^2$, the quantum efficiency was 0.35%.

Analysis of Subwavelength Metal Hole Array Structure for the Enhancement of Quantum Dot Infrared Photodetectors

  • Ha, Jae-Du;Hwang, Jeong-U;Gang, Sang-U;No, Sam-Gyu;Lee, Sang-Jun;Kim, Jong-Su;Krishna, Sanjay;Urbas, Augustine;Ku, Zahyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.334-334
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    • 2013
  • In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

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Morphology Control of ZnO Nanostructures by Surfactants During Hydrothermal Growth (수열합성중 계면활성제를 이용한 ZnO 나노구조 형상 제어)

  • Park, Il-Kyu
    • Journal of Powder Materials
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    • v.23 no.4
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    • pp.270-275
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    • 2016
  • We report on an all-solution-processed hydrothermal method to control the morphology of ZnO nanostructures on Si substrates from three-dimensional hemispherical structures to two-dimensional thin film layers, by controlling the seed layer and the molar contents of surfactants during their primary growth. The size and the density of the seed layer, which is composed of ZnO nanodots, change with variation in the solute concentration. The ZnO nanodots act as heterogeneous nucleation sites for the main ZnO nanostructures. When the seed layer concentration is increased, the ZnO nanostructures change from a hemispherical shape to a thin film structure, formed by densely packed ZnO hemispheres. In addition, the morphology of the ZnO layer is systematically controlled by using trisodium citrate, which acts as a surfactant to enhance the lateral growth of ZnO crystals rather than a preferential one-dimensional growth along the c-direction. X-ray diffraction and energy dispersive X-ray spectroscopy results reveal that the ZnO structure is wurtzite and did not incorporate any impurities from the surfactants used in this study.

Hierarchical Location Mobility Management using MobilityManagement Points in IP networks

  • Park, Chul Ho;Oh, Sang Yeob
    • Journal of Korea Multimedia Society
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    • v.25 no.8
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    • pp.1069-1074
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    • 2022
  • IP mobility can be handled in different layers of the protocol. Mobile IP has been proposed to handle the mobility of Internet hosts in the network layer. Recently, a new method based on the SIGMA mobility architecture has been proposed to support mobility management with reduced packet loss and latency. The location management structure is not suitable for frequent mobile handover due to the high mobility of the user with this transport layer solution. In this paper, we propose a location management optimization method in a mobile communication network by applying hierarchical location management using MMPs(Mobility Management Points) for transport layer mobility management. Therefore, we propose an efficient hierarchical mobility management structure even between heterogeneous wireless networks using MMPs for the probability that a mobile terminal can change multiple location areas between two messages and calls. The proposed method shows reduction in location update cost and data retrieval cost using MMPs, and as opposed to mobility appearing in time intervals with the minimum cost required to reach 90% of the stabilized cost, the mobility location update search, location It was found that the message processing cost per area was reduced.

Emission Characteristics of White PHOLEDs with Different Emitting Layer Structures (발광층 구조에 따른 백색 인광 OLED의 발광 특성)

  • Seo, Jung-Hyun;Paek, Kyeong-Kap;Ju, Sung-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.6
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    • pp.456-461
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    • 2012
  • We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue, blue/red and red/blue/red emitting layer (EML) structures were fabricated using a host-dopant system. In case of white PHOLEDs with red/blue structure, the best efficiency was obtained at a structure of red (15 nm)/blue (15 nm). But the emission color was blue-shifted white. In case of white PHOLEDs with blue/red structure, the better color purity and efficiency were observed at a blue (29 nm)/red (1 nm) structure. For additional improvement of color purity in white PHOLEDs with blue (29 nm)/red (1 nm) EMLs, we fabricated white PHOLEDs with red (1 nm)/blue (28 nm)/red (1 nm) structure. The current efficiency, external quantum efficiency, and CIE (x, y) coordinate were 27.2 cd/A, 15.1%, and (0.382, 0.369) at 1,000 $cd/m^2$, respectively.