• 한국세라믹학회지
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• 제22권6호
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• pp.37-41
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• 1985

Several $Al_2O_3$-based polycrystalline which had different dopant ratio in the range of 0.5mol% were prepared by doping pure $Cr_2O_3$, $ZrO_2$, $HfO_3$ Single crystalline which had same composition with above polycrystalline were made by means of floating zone method. This study examined the role of each dopant for enhancing the mefchanical properties of $Al_2O_3$-based Ceramics. Optical micrographs $({\times}200)$ of $Al_2O_3-Cr_2O_3$ single crystal showing not only radial crack (rc) on the specimen surface but median crack (mc) and lateral crack (lc) under surface at the edge of indentation mark. Fracture toughness of $Al_2O_3$-based Ceramics was increased with $ZrO_2$ content. Alloying effect of $Cr_2O_3$ contributed to the hardness of $Al_2O_3$ based ceramics.

• 한국재료학회지
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• 제20권10호
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• pp.518-523
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• 2010

In this study, partially stabilized zirconia was synthesized using a chemical $Y_2O_3$ stabilizer and hydrothermal method. First, $YCl_3-6H_2O$ and $ZrCl_2O-8H_2O$ was dissolved in distilled water. Y-TZP (a $Y_2O_3$-doped toughened zirconia polycrystalline precursor) was also prepared by conventional co-precipitates in the presence of an excess amount of $NH_4OH$ solution under a fixed pH of 12. The Y-TZP precursors were filtered and repeatedly washed with distilled water to remove $Cl^-$ ions. $ZrO_2$-Xmol%$Y_2O_3$ powder was synthesized by a hydrothermal method using Teflon Vessels at $180^{\circ}C$ for 6 h of optimized condition. The powder added with the Xmol%- $Y_2O_3$ (X = 0,1,3,5 mol%) stabilizer of the $ZrO_2$ was synthesized. The crystal phase, particle size, and morphologies were analyzed. Rectangular specimens of $33mm{\times}8mm{\times}3$ mm for three-point bend tests were used in the mechanical properties evaluation. A teragonal phase was observed in the samples, which contains more than 3 mol% $Y_2O_3$. The $3Y-ZrO_2$ agglomerated particle size was measured at $7.01{\mu}m$. The agglomerated particle was clearly observed in the sample of 5 mol % $Y_2O_3-ZrO_2$, and and the agglomerated particle size was measured at 16.4 um. However, a 20 nm particle was specifically observed by FE-SEM in the sample of 3 mol% $Y_2O_3-ZrO_2$. The highest bending fracture strength was measured as 321.3 MPa in sample of 3 mol% $Y_2O_3-ZrO_2$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.118-119
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• 2007

Phase stability and morphological investigation on the $Si/SiO_2/HfO_2$ and $Si/SiO_2/ZrO_2$ stack are presented. Thermal stability of $HfO_2$ and $ZrO_2$ determines the quality of interface and subsequently the performance of device. The stacks have been fabricated and annealed at $1000^{\circ}C$ for various time. In evolution of crystalline phase and morphology (electrical and geometrical) of high-k materials, annealing time and process are observed to be crucial factors. The crystallization of some phase has been observed in the case of $Si/SiO_2/HfO_2$. The chemical environment around Zr and Hf in respective samples is observed to be different.

• 한국재료학회지
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• 제9권1호
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• pp.8-13
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• 1999

$ZrB _2$ was prepared from a mixture of $ZrO_2$, $B_2$$O_3$and Mg by SHS method. The combustion products were successfully obtained from a mixture of $Zro_2$:$B_2$$O_3$:Mg=1:2.0:8.5(molar ratio). MgO, by-product, was removed to 92.7% by leaching with 1M HCl solution at 9$0^{\circ}C$, for 10 hours. After leaching, the mean particle size of the resultant $ZrB_2$powders was 23.6$\mu\textrm{m}$. $ZrB_2$-ZrC composite was suitably obtained from a mixture of C/Zr=1.2 molar ratio by arc-melting method. The density of arc-melted specimen increased by adding excess zirconium content(x). The bulk density was 6.17g/㎤ for x=0, and 6.37g/㎤ x=4. Vickers hardness of arc-melted specimen was /$1290kg\textrm{mm}^2$ for x=0, and fracture toughness increased to 4.2MPa.m\ulcornerforx=4 compared to 3.4MPa.m\ulcornerfor x=0.

• Korean Chemical Engineering Research
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• 제45권4호
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• pp.378-383
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• 2007

Zirconium titanate($Zr_xTi_{1-x}O_2$)와 같은 다성분계 금속산화물의 박막을 형성함에 있어 비교적 저온에서 박막성분 간의 정확한 조성조절이 이루어지며 균일한 박막특성을 같게 하는 새로운 박막제조 공정방법을 제시하였다. 이 공정방법은 우선 다성분계 금속산화박막을 구성하는 단성분계 금속산화막들을 적층식구조로 형성하여 적절한 열처리로 고상확산 반응을 통한 단일상 다성분계 박막을 형성하는 것을 특징으로 한다. 본 연구에서는 단성분계 산화박막층을 형성하는 방법으로 나노두께의 박막을 형성할 수 있는 능력과 두께조절성이 우수한 PRTMOCVD(pulsed rapid thermal metalorganic chemical vapor deposition) 법이 개발 적용하였다. PRTMOCVD 법으로 $ZrO_2$와 $TiO_2$ 단성분 산화막의 두께를 제어하면서 교차로 적층시킨 후 $850^{\circ}C$의 질소분위기에서 30분간 열처리를 통한 박막간의 상호확산을 통해 $Zr_xTi_{1-x}O_2$ 다성분계 산화박막을 형성하였다. 박막내의 Zr과 Ti의 조성은 $ZrO_2$와 $TiO_2$ 단성분 산화막의 두께로 조절하였다. 형성된 $Zr_xTi_{1-x}O_2$ 박막에 대한 상세한 물성을 분석하였다.

• 한국분말재료학회지
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• 제26권6호
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• pp.455-462
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• 2019

ZrB₂ ceramic and ZrB₂ ceramic composites with the addition of SiC, WC, and SiC/WC are successfully synthesized by a spark plasma sintering method. During high-temperature oxidation, SiC additive form a SiO₂ amorphous outer scale layer and SiC-deplete ZrO₂ scale layer, which decrease the oxidation rate. WC addition forms WO₃ during the oxidation process to result in a ZrO₂/WO₃ liquid sintering layer, which is known to improve the anti-oxidation effect. The addition of SiC and WC to ZrB₂ reduces the oxygen effective diffusivity by one-fifth of that of ZrB₂. The addition of both SiC and WC shows the formation of a SiO₂ outer dense glass layer and ZrO₂/WO₃ layer so that the anti-oxidation effect is improved three times as much as that of ZrB₂. Therefore, SiC- and WC-added ZrB₂ has a lower two-order oxygen effective diffusivity than ZrB₂; it improves the anti-oxidation performance 3 times as much as that of ZrB₂.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권2호
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• pp.92-97
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• 1999

The mechanical and electrical properties of the hot-pressed and annealed $\beta-Sic$+39vol.%$ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3(6:4wt%)$. In this microstructures, no reactions and elongated $\alpha$-SiC grains with equiaxed $ZrB_2$, gains were observed between $\beta-SiC$ and $ZrB_2$, and the relative density was over 97.6% of the theoretical density. Phase analysis of the composites by XRD revealedmostly of $\alpha$-SiC(6H, 4H), $ZrB_2$, and weakly $\beta-SiC$(15R) phase. The fracture toughness decreased with increasing $Al_2O_3+Y_2O_3$ contents and showed the highest of $6.37MPa.m^{\fraction ane-half}$ for composite added with 4wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity increased with increasing $Al_2O_3+Y_2O_3$contents and showed the lowest of $1.51\times10^{-4}\Omega.cm$ for composite added with $Al_2O_3+Y_2O_3$ additives at $25^{\circ}C$. This reason is the increasing tendency of pore formation according to amount of liquid forming additives $Al_2O_3+Y_2O_3$. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) against temperature up to $700^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Korean Chemical Engineering Research
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• 제45권6호
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• pp.663-668
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• 2007

$Ni/CeO_2-ZrO_2$ 촉매를 이용하여 수소 제조를 위한 메탄의 자열개질반응 특성을 조사하였다. 메탄의 자열개질반응에서 촉매의 활성과 안정성을 향상시키기 위해 알루미나가 코팅된 금속 모노리스를 사용하였으며, 금속모노리스 촉매체는 높은 반응온도에서 분말형태의 촉매에 비해 높은 메탄 전환율을 나타내었다. 자열개질반응에 있어서 $H_2O/CH_4/O_2$의 비는 전환율에 영향을 미치는 중요한 변수임을 알 수 있었다. $H_2O/CH_4$ 비가 증가함에 따라 수소 수율은 증가되고, 또한 $O_2/CH_4$ 비가 증가함에 따라 메탄 전환율은 증가하지만 수소 수율은 감소하였다. $Ni/CeO_2-ZrO_2$ 촉매에 0.5 wt%의 귀금속 촉매인 Ru 첨가로 인해 낮은 반응온도에서 촉매 활성이 향상되었다.

• 한국표면공학회지
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• 제35권2호
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• pp.101-106
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• 2002

The microstructural changes of $NiCrAlY/ZrO_2$-$Y_2$$O_3$ composite coatings that were manufactured by air-plasma-spraying were investigated using XRD and SEM/EDS. The as-sprayed microstructure consisted of (Ni,Cr)-rich regions, ($ZrO_2$-$Y_2$$O_3$)-rich regions, and $Al_2$$O_3$-rich layers that were formed during spraying owing to the oxidation of Al in NiCrAlY. During oxidation between 900 and $1100^{\circ}C$ in air, Cr in the (Ni,Cr)-rich regions diffused toward the $Al_2$$O_3$-rich layers, and oxidized to be dissolved in $A1_2$$O_3$-rich layers. The oxidation of Ni in the (Ni,Cr)-rich regions was less distinct, except at the outer surface of the coating.