• Title/Summary/Keyword: ZrO_2$

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Evaluation of Piezoelectric Transformer Fabricated with PNN-PMN-PZT Ceramics (PNN-PMN-PZT계 소결체를 이용한 압전트랜스포머 제작 및 특성평가)

  • Ahn, Sang-Ki;Lee, Myung-Woo;Kim, Sung-Jin;Ryu, Sung-Lim;Kweon, Soon-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.158-158
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    • 2009
  • 기계적 에너지를 전기적 에너지로 변환하는 에너지 변환소자인 압전 세라믹스는 액추에이터, 변압기, 초음파모터 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 증가하고 있다. 최근에는 이러한 압전 소자를 앞으로 도래하는 ubiquitous, 무선 모바일 시대의 휴대용 전자제품, robotics 등의 분야에 적용하기 위하여 소형화 및 경량화를 구현하고자 다양한 연구가 진행되고 있다. 본 연구에서는 압전 특성이 우수한 PNN-PMN-PZT 삼원계 세라믹을 이용하여 압전 트랜스포머를 제작하고 전기적 특성을 평가하였다. 압전트랜스포머는 전왜-압전효과를 이용한 소전력용 고전압발생소자로서 종래의 권선형 트랜스포머에 비교해서 소형, 경량이면서 승압비가 높고 구조가 간단하므로 직류 고전압전원에 응용되고 있다. 압전트랜스의 이론적인 고찰은 Rosen 이후로 많은 연구자들에 의해서 보고되었다. 그런데 압전세라믹트랜스는 공진 시 강력한 에너지변환을 하기 때문에 재료의 물리적 특성이 매우 중요함에도 불구하고, 이러한 물리적 특성에 관한 연구는 거의 없었다. 따라서 본 연구에서는 물리적 특성과 전기적 특성의 상호 연관성을 고찰하고자 하였다. 압전트랜스용 재료는 전기기계결합계수($k_p$)와 기계적품질계수(Qm)가 높아야 한다. 전기기계결합계수를 높이기 위해서는 상경계 조성의 Pb(Zr,Ti)$O_3$[PZT]계 세라믹스가 가장 우수하다. 본 연구에서는 기계적 품질계수를 향상시키기 위해서 $Pb(Nn_{1/3}Nb_{2/3})_{0.06+x}(Mn_{1/3}Nb_{2/3})_{0.065-x}(Zr_{0.48}Ti_{0.52})_{0.875}0_3$계의 조성을 설계하여 압전특성을 평가하고 미세구조를 분석하였다. 또한 압전트랜스를 제작하여 입출력의 승압비 및 주파수 특성 등도 평가하였다.

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Microscopic characterization of pretransition oxide formed on Zr-Nb-Sn alloy under various Zn and dissolved hydrogen concentrations

  • Kim, Sungyu;Kim, Taeho;Kim, Ji Hyun;Bahn, Chi Bum
    • Nuclear Engineering and Technology
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    • v.50 no.3
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    • pp.416-424
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    • 2018
  • Microstructure of oxide formed on Zr-Nb-Sn tube sample was intensively examined by scanning transmission electron microscopy after exposure to simulated primary water chemistry conditions of various concentrations of Zn (0 or 30 ppb) and dissolved hydrogen ($H_2$) (30 or 50 cc/kg) for various durations without applying desirable heat flux. Microstructural analysis indicated that there was no noticeable change in the microstructure of the oxide corresponding to water chemistry changes within the test duration of 100 days (pretransition stage) and no significant difference in the overall thickness of the oxide layer. Equiaxed grains with nano-size pores along the grain boundaries and microcracks were dominant near the water/oxide interface, regardless of water chemistry conditions. As the metal/oxide interface was approached, the number of pores tended to decrease. However, there was no significant effect of $H_2$ concentration between 30 cc/kg and 50 cc/kg on the corrosion of the oxide after free immersion in water at $360^{\circ}C$. The adsorption of Zn on the cladding surface was observed by X-ray photoelectron spectroscopy and detected as ZnO on the outer oxide surface. From the perspective of $OH^-$ ion diffusion and porosity formation, the absence of noticeable effects was discussed further.

Effect of Laser Processing Patterns on the Bonding Interface Quality during Laser Sintering of Magnesium Alloys with Zirconia (마그네슘 합금 표면의 지르코니아 분말 레이저 소결과정에서 조사 패턴이 접합 계면 품질에 미치는 영향)

  • Yoon, Sangwoo;Kim, Joohan
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.20 no.2
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    • pp.51-57
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    • 2021
  • The quality of the ceramic sintered coating on a metal surface through laser surface treatment is affected by the laser irradiation pattern. Depending on the laser irradiation pattern, the amount of residual stress and heat applied or accumulated on the surface increases or decreases, affecting the thickness attained in the ceramic sintering area. When the heat energy accumulated in the sintering area is high, the ceramic and the metal alloy melt and sufficiently mix to form a homogeneous and thick bonding interface. In this study, the thermal energy accumulation in the region sintered with zirconia was controlled using four types of laser processing patterns. The thickness of the diffusion region is analyzed by laser-induced breakdown spectroscopy of Mg-ZrO2 generated by laser sintering zirconia powder on the magnesium alloy surface. On the basis of the analysis of the Mg and Zr present in the sintered region through LIBS, the effect of the irradiation pattern on the sintering quality is confirmed by comparing and analyzing the heat and mass transfer tendency of the diffusion layer and the degree of diffusion according to the irradiation pattern. The derived diffusion coefficients differed by up to 9.8 times for each laser scanning pattern.

Effect of boron milling on phase formation and critical current density of MgB2 bulk superconductors

  • Kang, M.O.;Joo, J.;Jun, B.H.;Park, S.D.;Kim, C.S.;Kim, C.J.
    • Progress in Superconductivity and Cryogenics
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    • v.21 no.1
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    • pp.18-24
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    • 2019
  • This study was carried out to investigate the effect of milling of boron (B), which is one of raw materials of $MgB_2$, on the critical current density ($J_c$) of $MgB_2$. B powder used in this study is semi-amorphous B (Pavezyum, Turkey, 97% purity, 1 micron). The size of B powder was reduced by planetary milling using $ZrO_2$ balls (a diameter of 2 mm). The B powder and balls with a ratio of 1:20 were charged in a ceramic jar and then the jar was filled with toluene. The milling time was varied from 0 to 8 h. The milled B powders were mixed with Mg powder in the composition of (Mg+2B), and the powder mixtures were uniaxially pressed at 3 tons. The powder compacts were heat-treated at $700^{\circ}C$ for 1 h in flowing argon gas. Powder X-ray diffraction and FWHM (Full width at half maximum) were used to analyze the phase formation and crystallinity of $MgB_2$. The superconducting transition temperature ($T_c$) and $J_c$ of $MgB_2$ were measured using a magnetic property measurement system (MPMS). It was found that $B_2O_3$ was formed by B milling and the subsequent drying process, and the volume fraction of $B_2O_3$ increased as milling time increased. The $T_c$ of $MgB_2$ decreased with increasing milling time, which was explained in terms of the decreased volume fraction of $MgB_2$, the line broadening of $MgB_2$ peaks and the formation of $B_2O_3$. The $J_c$ at 5 K increased with increasing milling time. The $J_c$ increase is more remarkable at the magnetic field higher than 3 T. The $J_c$ at 5 K and 4 T was the highest as $4.37{\times}10^4A/cm^2$ when milling time was 2 h. The $J_c$ at 20 K also increased with increasing milling time. However, The $J_c$ of the samples with the prolonged milling for 6 and 8 h were lower than that of the non-milled sample.

Electromechanical Properties of PMN-PT-PZ Composition for High Power Device (고출력 압전소자를 위한 압전 세라믹(PMN-PT-PZ)조성의 전기기계적 특성)

  • Lee, K.W.;Hong, J.K.;Jeong, S.H.;Lee, J.S.;Park, C.H.;Lim, K.J.
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1723-1725
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    • 1999
  • This paper is the study for piezoelectric properties of PMN-PT-PZ composition for high power piezoelectric device. It needs the properties such as high mechanical quality factor(Qm), high electromechanical coupling coefficient(kp) and high dielectric strain constant$(d_31)$, and the stable electromechanical properties under high vibration level. For acquiring this results, the value of x is changed in 0.1Pb$(Mn_{1/3}Nb_{2/3})O_3$+(0.9-x)$PbZrO_3+xPbTiO_3$ composition to find MPB(morphotropic phase boundary), and the piezoelectric constants is measured by resonance-antiresonance frequency method, based on IRE Standard. Also, it is measured as a function of the amount of additive, $Nb_2O_5$. When the composition is applied to high power device, the electromechanical properties is measured by laser vibrometer to confirm the reliablity under high vibration level. From these results, PMN-PT-PZ composition is shown excellent properties and capacity of application to high power device.

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Capping Intercrystalline Defects of Polycrystalline UiO-66 Membranes by Polydimethylsiloxane Coating (폴리다이메틸실록산 코팅을 통한 다결정성 UiO-66 분리막의 비선택적 결정립계 결함 캡핑)

  • Ik Ji Kim;Hyuk Taek Kwon
    • Clean Technology
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    • v.29 no.1
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    • pp.71-75
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    • 2023
  • In general, the presence of non-selective intercrystalline (grain boundary) defects in polycrystalline metal-organic framework (MOF) or zeolite membranes, which are known to be ca. 1 nm in size, causes lower membrane performance (selectivity) than the intrinsically expected. In this study we show that applying a thin polymeric coating of polydimethylsiloxane (PDMS) on a polycrystalline MOF membrane is effective to cap the non-selective intercrystalline defects and therefore improve membrane performance. To demonstrate the concept, first, polycrystalline UiO-66, one of Zr-based MOFs, membranes were prepared by an in-situ solvothermal growth. By controlling membrane growth condition with respect to growth temperature, we were able to obtain polycrystalline UiO-66 membranes at 150 ℃ with intercrystalline defects of which the quantity is not significant, so it can be plugged by the suggested PDMS deposition. Second, their performances were compared before and after the PDMS deposition. As expected, the PDMS deposition ended up with a noticeable increase in CO2/N2 ideal selectivity from 6 to 14, indicating successful intercrystalline defect plugging. However, the enhancement in CO2/N2 selectivity was accompanied by a significant reduction in CO2 permeance from 5700 to 33 GPU because the PDMS deposition not only plugs defects but also forms a continuous coating on membrane surface, adding an additional transport resistance.

A Materials Approach to Resistive Switching Memory Oxides

  • Hasan, M.;Dong, R.;Lee, D.S.;Seong, D.J.;Choi, H.J.;Pyun, M.B.;Hwang, H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.66-79
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    • 2008
  • Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

The Effect of NiO Addition to the PNN-PZT Piezoelectric Ceramics on Piezoelectric Properties (Pb(Ni1/3Nb2/3)O3-PZT 세라믹스 고용체에서 과잉 NiO첨가에 따른 압전특성 변화)

  • Choi Y. G.;Son Y. J.;Kweon J. C.;Cho K. W.;Yoon M. S.;Kim I. H.;Kim Y. M.;Ur S. C.
    • Korean Journal of Materials Research
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    • v.15 no.6
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    • pp.413-418
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    • 2005
  • Perovskite $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3[PNN-PZT]$ ceramics were synthesized by conventional ceramic processing technique. In order to modify piezoelectric properties for sensor application in this system, NiO addition was considered to provide $Ni^{+2}$ as an acceptor, which was known to occupy with B site in the structure. The effect of NiO addition up to $8\;mol\%$ on the following piezoelectric properties as well as sintering properties was investigated. When NiO added more than $1\;mol\%$, average grain size was decreased and second phase was found to form. Moreover, the second phase caused decrease in relative dielectric constant $(\varepsilon_{33}T/\varepsilon0)$, electro-mechanical coupling factor $(k_p)$, and piezoelectric charge constant $(d_{33})$, while increasing mechanical quality factor $(Q_m)$. When $1\;mol\%$ NiO was added, density, dielectric properties and piezoelectric properties were abruptly increased.

Petrochemical Study on the Cretaceous Volcanic Rocks in Kageo island, Korea (가거도(소흑산도)의 백악기 화산암류에 대한 암석화학적 연구)

  • 김진섭;백맹언;성종규
    • The Journal of the Petrological Society of Korea
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    • v.6 no.1
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    • pp.19-33
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    • 1997
  • This study reports the results about the petrography and geochemical characteristics of 10 representative volacanic rocks. The Cretaceous volcanic rocks distributed in the vicinity of the Kageo island composed of andesitic rocks, dacitic welded tuff, and rhyolitic rocks in ascending order. Sedimentary rock is the basement in the study area covered with volcanic rocks. Andesitic rocks composed of pyroclastic volcanic breccia, lithic lapilli tuff and cryptocrystallin lava-flow. Most dacitic rocks are lapilli ash-flow welded tuff. Rhyolitic rocks consists of rhyolite tuff and rhyolite lava flow. Rhyolite tuff are lithic crystal ash-flow tuff and crystal vitric ash-flow tuff with somewhat accidental fragments of andesitic rocks, but dacitic rocks. The variation of major and trace element of the volcanic rocks show that contents of $Al_2O_3$, FeO, CaO, MgO, $TiO_2$ decrease with increasing of $SiO_2$. On the basis of Variation diagrams such as $Al_2O_3$ vs. CaO, Th/Yb vs. Ta/Yb, and $Ce_N/YB_N$ vs. $Ce_N$, these rocks represent mainly differentiation trend of calc-alkaline rock series. On the discriminant diagrams such as Ba/La and La/Th ratio, Rb vs. Y + Nb, the volcanic rocks in study area belongs to high-K Orogenic suites, with abundances of trace element and ternary diagram of K, Na, Ca. According to the tectonic discriminant diagram by Wood, these rocks falls into the diestructructive continental margin. K-Ar ages of whole rocks are from andesite to rhyolite $97.0{\pm}6.8~94.5{\pm}6.6,\68.9{\pm}4.8,\61.5{\pm}4.9~60.7{\pm}4.2$ Ma, repectively. Volcanic rocks in study area show well correlation to the Yucheon Group in terms of rock age dating and geochemcial data, and derived from andesitic calc-alkaline magma that undergone low pressure fractional crystallization dominated plagioclase at <30km.

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Processing Study for the Micro Pillar for Piezoelectric Energy Harvest (압전 에너지 하베스트를 위한 마이크로 필라 공정 연구)

  • Yun, Seok-Woo;Lee, Ku-Tak;Lee, Kyoung-Su;Jeong, Soon-Jong;Kim, Min-Soo;Cho, Kyoung-Ho;Koh, Jung-Hyuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.8
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    • pp.601-604
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    • 2010
  • In this study, the piezoelectric energy harvester was investigated employing the pillar structure with the diameter size of 50~500 um. Usually, the aspect ratio between the height and diameter was related with the piezoelectric performance. High aspect ratio was showed the low electric noise and high piezoelectric properties than low aspect ratio. Therefore, we have selected the Su-8 photo-resist and modified lithography process to manufacture the pillar structure with height above the 250 ${\mu}m$. In this presentation, we will report the process and properties of micro pillar structure based on the PMN-PZT (Pb$(Mg_{1/3}Nb_{2/3})O_3$-PbZrTiO$_3$) materials.