• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.810-814
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1022-1024
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• 1995

In this study, $Pb(Zr_xTi_{1-x})O_3$(x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol.%] of $Pb(Zr_xTi_{1-x})O_3$ was made and spin-coated on the Pt/$SiO_2$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at $400[^{\circ}C]$ for 10[min.]. Sintering temperature and time were $500{\sim}800[^{\circ}C]$ and $1{\sim}60$[min.]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin films were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of $700[^{\circ}C]$ for 1 hour. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.67-69
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• 2004

The $Pb(Zr,Ti)O_3$ thin films were fabricated with $Pb(La,Ti)O_3$ buffers in-situ onto $Pt/Ti/SiO_2/Si$ substrates by pulsed laser deposition technique using a Nd:YAG laser with energy density of $2.5J/cm^2$, and deposited for 10 minutes at $550^{\circ}C$ of substrate temperature. And then, the films have been annealed at $550^{\circ}C$ in oxygen ambient pressure. The remanent polarization value is increased by using buffer layers but coercive field of films is slightly increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.307-314
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• 1998

PZT thin films were fabricated by the Sol-gel method. Starting materials used for the preparation of the stock solution were Pb-acetate trihydrate, Zr-normal propoxide and Ti-isopropoxide. 2-Methoxyethanol and iso-propanol were used for solution. For studying the diffusion of Pb ion into the substrates. We used bare Si substrate, $SiO_2/Si$ substrates which was produced by thermal oxidation and $TiO_2/SiO_2/Si$ which was mad by Sol-gel method. Densification and adhesion of thin films were observed by SEM. Phase formation of thin films and diffusion of Pb ion into the substrate were examined by XRD and ESCA, respectively. In the case of bare Si and $SiO_2/Si$ substrate, we obtained the perovskite phase at $700^{\circ}C$ and restricted a little the diffusion of Si ion into the film with $SiO_2$ buffer layer. In the case of $TiO_2/SiO_2/Si$, perovskite phase were obtained at $500^{\circ}C$ and the diffusion of Pb ion and Si ion were restriced.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.836-850
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• 1996

In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.606-610
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• 1995

In this study, Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ stock solution was made and spin-coated on the Pt/ $SiO_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were chied at 400[.deg. C] for 10[min]. The coating process was repeated 6 times and then heat-treated at 500-800[.deg. C] and 1 hour. The final thickness of the thin films were about 4800[.angs.]. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hour. Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films sintered at 700[.deg. C] for 1 hour showed good dielectric and ferroelectric properties.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1618-1620
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] multilayered thin films were deposited by RF Sputtering method on the Pt/Ti/$SiO_2$/Si substrate. This procedure was repeated several times to form PZT(4060)/(6040) heterolayerd thin films. The effects on the structural and dielectric properties of PZT multilayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(4060)/(6040) multilayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) multilayered thin films. The relative dielectric constant and dielectric loss at 100Hz of the PZT(4060)/(6040)-5 multilayered thin films were about 1106 and 0.016, respectively.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.117-119
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• 2003

The $Pb(Zr_{0.3}Ti_{0.7)O_3/Pb(Zr_{0.7}/Ti_{0.3})O_3$ [PZT(30/70)/(70/30)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. Sputter gas ratio(AR/O2) was changed form 90/10 to 50/50. The structural properties and electrical properties of the PZT(30/70)/ (70/30) heterolayered thin films were studied. The relative dielectric constant and dielectric loss at 100Hz of the PZT(30/70)/PZT(70/30) heterolayered thin films with Ar/$O_2$(80/20) ratio were about 982 and 0.036, respectively.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.138-147
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• 2008

$SiO_2/TiO_2/ZrO_2$ broadband anti-reflective multi-layer thin films were prepared at room temperature by RF sputtering system. Optical constants and structural properties on each layer of films were analyzed by spectroscopic ellipsometer and transmittance spectra of the films were measured by $UV-V_{is}$ spectrophotometer in the range of 300$\sim$900 nm. To evaluate the films, we compared the measured and analyzed spectra with designed spectra. We investigated influence of discrepancy of thickness and refractive indices of each layer on changes of the transmittance spectra. It was found that refractive indices and shape of dispersion of deposition materials are more contributed to changes of the transmittance spectra than thickness of layer.