• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.184-189
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• 2002

The electrical and optical properties of $(Pb_{0.91}La_{0.09})(Zr_{0.65}Ti_{0.35})O_3$(PLZT) thin films by MOCVD using ultrasonic spraying were investigated. To compensate the Pb loss by evaporation, 5 and 10 wt% of excess Pb was added to 0.2 M precursor. After deposition of films on ITO-coated glasses in oxygen atmosphere for 30 min, films were heated by in-situ RTA (rapid thermal annealing) method. When the films were heat treated at $600^{\circ}C$, perovskite single phase was obtained. The optical property of the film with 10 wt% excess Pb was excellent showing about 84 % of transmittance near 520 nm. The dielectric constant of the film was about 308 and the leakage current of the film was lower than the Pb excess 0, 5 wt% PLZT thin films.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.19-19
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• 2002

Perovskite-type titanate dielectrics have attracted much attention in memory devices such as DRAMs or FeRAMs due to their high dielectric constants. However, low volatility of the Ba, Sr, Pb or Zr precursors with only thd ligands has limitations in obtaining high quality thin films by liquid source metal organic chemical vapor deposition (LS-MOCVD) processes. To improve the volatility of these precursors, many attempts have been made such as adding polyether ligands to satisfy the coordinative saturation. We report the synthesis of new precursors Ba(thd)₂(tmeea) and Sr(thd)₂(tmeea), where tmeea = tris[2-(2-methoxyethoxy)ethyl]amino, and LS-MOCVD of barium strontium titanate (BSTO) thin films using these precursors. Due to increased basicity of amines compared with ethers, it is expected that the nitrogen-donor ligand will make a strong bond to a metal than an analogous oxygen-donor ligand, consequently improving the volatility and thermal behavior of these precursors. Thin films of BSTO were grown on Pt(111)/SiO₂/Si(100) substrates by LS-MOCVD using a cocktail source consisting of the conventional Ti precursor Ti(thd)₂(O/sup i/Pr), and these new Ba and Sr precursors. As-grown films were characterized by XPS, SEM, XRD, XRF, and C-V and I-V measurements. BSTO films grown at 420℃ were stoichiometric barium strontium titanate with very smooth surface morphology and their dielectric constants were found to be as targe as 450. Dependence of the composition, microstructure and the electrical properties of the BSTO films on the growth temperature, annealing temperature, working pressure, and the composition of the cocktail source will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.274-280
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• 1998

Polycrystalline $Sr_2Nb_2O_7$ ceramics with very high Curie temperature were sintered using the powder derived by the chemical coprecipitation method (CCP). The phase evolution and grain-orientation of sintered samples were examined by XRD, while sintering behavior, dielectric properties and polarization were studied by SEM and ferroelectric tester. Extremely high degree of grain-orientation was observed along the (0k0) direction, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal. Thin film fabrication of $Sr_2Nb_2O_7$ in the pyroniobate family was also attempted on $SiO_2$/Si(100), Pt/$SiO_2$/Si(100), Pt/Ti/$SiO_2$/Si(100) and Pt/$ZrO_2/SiO_2/Si_2(100)$ substrates, using metalorganic decomposition (MOD) process. Neodecanoate precursor solution was prepared by mixing strontium neodecanoate with niobium neodecanoate synthesized from niobium ethoxide. It was found that $Sr_2Nb_2O_7$ single phase appeared in XRD patterns the samples annealed above $950^{\circ}C$. The effect of substrate type on film microstructure and dielectric properties was observed.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.107-112
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• 1996

Thin films of $Pb(Zr_xTi_{1-x})O_3$)PZT) were grown on $Pt/SiO_2/Si(100)$ at various temperatures by RF magnetron sputtering method. Surface morphology of these films were studied by using Atomic Force Microscopy(AFM). These films were also analyzed by using Atomic Force Microscopy(AFM). These films were also analyzed by using X-ray photoemission spectroscopy(XPS) for determining their chemical composition and their depth profile. It was found that the films grown at the substrated temperature of $300^{\circ}C$ have much more smooth surface characteristics in comparison to those films grown at room temperature, which may be explained in terms of surface mobility of ad-atoms such as Pb. It was also found that Pb enrichment in the near surface region enhanced for the films grown at higher substate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1932-1938
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• 2003

We have applied spectroscopic ellipsometry to investigate $high-{\kappa}$ dielectric thin films and correlate their optical properties with fabrication processes, in particular, with high temperature annealing. The use of high-k dielectrics such as $HfO_{2}$, $Ta_{2}O_{5}$, $TiO_{2}$, and $ZrO_{2}$ as the replacement for $SiO_{2}$ as the gate dielectric in CMOS devices has received much attention recently due to its high dielectric constant. From the characteristics found in the pseudo-dielectric functions or the Tauc-Lorentz dispersions, the optical properties such as optical band gap, polycrystallization, and optical density will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1170-1175
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• 1998

PZT films without lower electrode were deposited on the highly doped Si(100) substrate with MgO buffer layer (Mgo/si) by RF magnetron sputtering method followed by the rapid thermal annealing at $650^{\circ}C$ . We investigated the dependences of the crystalline and electrical properties on the MgO thickness and the RTA post annealing. The PZT films on bare Si (without MgO) showed pyrochlore crystal structure while those on MgO(50 )/Si substrates showed the typical perovskite crystal structures. From SEM and AES analysis, the thickness of PZT films was about 7000 showing relatively smooth interface. The depth profiles indicated that atomic species were distributed homogeneously in the PZT/MgO/Si substrate. The dielectric constant($\varepsilon_{r}$ ) and remanent polarization(2Pr) were about 300 and $14\mu$C/$\textrm{cm}^2$;, respectively. The leakage current was about $3.2\mu$/A$\textrm{cm}^2$.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.245-248
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• 2012

In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.