• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1042-1045
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• 2001

Microwave dielectric properties of Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_3$-Sr(Zn$_{1}$3/Nb$_{2}$3/) $O_3$(BZN-SZN) system were investigated as a function of sintering temperature and Zr $O_2$content. Density was increased and the temperature coefficient of resonant frequency (TCF, $\tau$$_{f}$) decreased with increasing sintering temperature. However dielectric constant (K) and Q$\times$f value did not change markedly with the sintering temperature. For the samples sintered at the same temperature, density, dielectric constant, and Q$\times$f value were increased and TCF was decreased with increasing Zr $O_2$concentration. Especially, the dielectric constant of the sample increased with x and exhibited the maximum value ($\varepsilon$$_{r}$=41) when x=0.6 at 1575$^{\circ}C$ sintered. TCF decreased with x and exhibited the minimum value ($\tau$$_{f}$=+0.8ppm/$^{\circ}C$) when x=1.0..0.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.325-328
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• 1991

In this study, $0.085Ba(La_{1/2}Nb_{1/2})O_3-0.915Pb(Zr_yTi_{1-y})O_3$(y=0.45, 0.50, 0.55, 0.60, 0.65[mol]) transparent electrooptic ceramics were fabricated by two-stage sintering method. Increasing the $PbZrO_3$ contents, dielectric constant was increased and Curie temperature was decreased. In the composition of 0.55[mol] $PbZrO_3$, electromechanical coupling factor was 0.43. From the results of ferroelectric hysteresis loop and transmitted light intensity with electric field, the compositions of 0.65, 0.60, 0.55[mol] $PbZrO_3$ was applicable to electroopticmemory device and the compositions of 0.50, 0.45[mol] $PbZrO_3$ was applicable to linear electrooptic device.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.17-24
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• 1985

In the composition of $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ the effect of particle size on PbO vaporization were measured, . The initial step of discontinuous vaporization of unreated PbO during the calcining process was depended on the particle size. All additives $La_2O_3Nb_2O_5$ and $Al_2O_3$ inhibited the grain growth of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ +2wt% excess PbO. The dielectric and piezoelectric properties of the composition $Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$ were improved by the addition of 2wt% excess PbO and proper additive. The electromechanical planar coupling factor of 0.65 and mechnical quality factor of 390 could be obtained by adding 5wt% $Nb_2O_5$ to the composition 2wt% excess PbO+$Pb(Mg_{0.15} W_{0.15})Ti_{0.35}-Zr_{0.35}O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.338-339
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• 2005

본 연구에서는 $Fe_2O_3$를 첨가한 $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi_{1-x})O_3$ 세라믹스에서 Zr/Ti 비 변화에 따른 소결 및 압전, 유전특성을 조사하였다. $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$+0.25Wt% $Fe_2O_3$ 계에서 Zr/(Ti+Zr)비(x)를 0.39에서 0.42까지 변화시킨 조성을 1100 - $1250^{\circ}C$ 온도에서 2시간 소결하여 이의 결정구조 및 미세조직을 분석하였고, 압전, 유전 특성 및 RAINBOW 액츄에이터로의 응용을 조사하였다. $1150^{\circ}C$에서 소결한 0.405 조성(x)에서 유전상수(${\varepsilon}r$) = 4669, 전기기계결합계수(kp) = 0.75, 압전상수($d_{33}$) = 810 pC/N의 우수한 특성 값을 나타내었으며, 닥터블레이드법에 의해 RAINBOW 액츄에이터를 제작하여 변위특성을 조사하였다.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.188-194
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• 1999

To investigate the effect of niobium and tin on the mechanical properties of zirconium alloys, the tensile test and the microstructural analysis were performed on the Zr-based binary(Zr-xNb, Zr-xSn) and ternary(Zr-0.8Sn-xNb, Zr-0.4Nb-xSn) alloys. As the content of Nb or Sn element increased, the strengths of the Zr-based alloys tended to gradually increase. The increase of mechanical strength was remarkable strength was remarkable in the range more than the solubility of Nb and Sn. The strengthening effects were discussed on the basis of the solid solution hardening, the precipitate hardening, the grain size effect, and the texture effect. The mechanical strength is mainly controlled by the solid solution hardening and additionally by the precipitate hardening in the content more than solubility limit of Nb and Sn. The grain refinement also has a slight effect on the strength of the zirconium alloys with the addition of Nb and Sn. However, the texture effect can be excluded due to the same Kearns number regardless of the content of alloying elements.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1436-1437
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• 2011

(1-x)(Na,K)$NbO_3$-xBa(Zr,Ti)$O_3$ lead free piezoelectric ceramics were synthesized to enhance the piezoelectric properties of (Na,K)$NbO_3$. The synthesis and sintering method were the conventional solid state reaction method and general sintering method in air atmosphere. We report the improved piezoelectric properties in the perovskite structure composed of the NKN and BZT ceramics. We investigated the effects of NKN, BZT on the structural and electrical properties of the NKN-BZT ceramics. The NKN-BZT ceramics show good performance with piezoelectric constant $d_{33}$=155pC/N. The results reveal that (1-x)(Na,K)$NbO_3$-xBa(Zr,Ti)$O_3$ ceramics are promising candidate materials for lead-free piezoelectric application.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.141-141
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• 1994

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.140-140
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• 1997

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.149.2-149
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• 2002

• Journal of Magnetics
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• v.9 no.1
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.