• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.279-279
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• 2007

비휘발성 메모리 Fe-RAM은 빠른 정보처리 속도와 전원공급이 차단되었을 때도 계속 정보를 유지할 수 있는 비휘발성 특징과 더불어 저전압, 저전력 구동의 장점이 있어서, 차세대 메모리로 많은 주목을 받고 있다. FeRAM에 사용되는 강유전체는 주로 Pb(Zr,Ti)$O_3$가 적용되었는데, 최근에는 비납계 강유전체의 연구도 활발히 이루어지고 있다. 이러한 비납계 강유전체 중에서 가장 특성이 우수한 물질은 $(Bi,La)_4Ti_3O_{12}$ (BLT) 이다. 그런데 BLT는 결정 방향에 따른 강한 이방성의 강유전 특성을 나타내기 때문에 BLT 박막을 이용하여 Fe-RAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 지금까지 연구된 BLT 박막의 방향성 조절결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 증착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법(sputtering deposition method), PLD (pulsed laser deposition)법 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요가 없게 된다. PVD 증착법의 적용을 위해서는 타겟의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표가 되지 않고 있다. 본 실험에서는 $Bi_2O_3,\;TiO_2,\;La_2O_3,\;Nb_2O_5\;and\;Al_2O_3$ 분말들을 이용하여 최적의 조성을 구하기 위하여 $Nb^{+5}$ 와 $Al^{+3}$을 $Ti^{+4}$ 자리에 소량 치환시켜 제조하였다. 혼합된 분말을 하소 후 pellet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 양면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. 측정결과 $Ti^{+4}$ 자리에 $Nb^{+5}$를 치환하여 제조한 시편에서 $2P_r{\sim}31\;{\mu}c/cm^2$정도의 매우 우수한 특성을 얻었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.7
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• pp.473-478
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• 2001

Ferroelectric P $b_{0.99}$［(Z $r_{0}$ 6S $n_{0.4}$)/0.9/ $Ti_{0.1}$］0.98/N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on L $a_{0.5}$S $r_{0.5}$Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films annealed at various temperature and time were investigated. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 %..10 %......

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.601-604
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• 2010

In this study, the piezoelectric energy harvester was investigated employing the pillar structure with the diameter size of 50~500 um. Usually, the aspect ratio between the height and diameter was related with the piezoelectric performance. High aspect ratio was showed the low electric noise and high piezoelectric properties than low aspect ratio. Therefore, we have selected the Su-8 photo-resist and modified lithography process to manufacture the pillar structure with height above the 250 ${\mu}m$. In this presentation, we will report the process and properties of micro pillar structure based on the PMN-PZT (Pb$(Mg_{1/3}Nb_{2/3})O_3$-PbZrTiO$_3$) materials.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.208-208
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• 2003

저온균일침전법(HPPLT)으로 제조된 TiO$_2$나노분말은 10$0^{\circ}C$이하의 온도에서 rutile상을 얻을 수 있다. 또한, rutile에서 anatase로의 상변화는 합성시간, 가열속도, 반응온도 그리고 음이온 첨가에 의해 일어난다고 보고되어졌지만, 금속양이온들에 의한 상변화는 알려진 바가 없다. 따라서, 다양한 양이온을 첨가하여 저온균일침전법에서 TiO$_2$의 상변화가 어떻게 일어나는지를 조사하였다. 출발원료인 TIC1$_4$를 사용하여 가수분해하여 0.67M의 TiOCl$_2$을 얻었다. 얻어진 TiOCl$_2$ 수용액에 각각 0.01M의 금속염화물(ZrOCl$_2$, NiCl$_2$, CuCl$_2$, FeCl$_3$, AlCl$_3$ 그리고 NbCl$_{5}$)을 첨가한 후 반응기에 넣고 10$0^{\circ}C$에서 4시간동안 가열하였다 가열한 후 얻어진 침전물에 NaOH 수용액을 이용하여 PH 7-8로 중화한 후 증류수로 Cl$^{-}$이온이 제거될 때까지 충분히 세척하였다. 세척된 침전물을 105$^{\circ}C$에서 24h동안 건조하여 분말을 얻었고, rutile에서 anatase로의 상변화특성을 관찰하기 위하여 XRD, SEM, TEM, ICP 분석을 실시하였다.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.107-109
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• 2003

This paper was to measure the structure, piezoelectric properties of $0.03Pb(Mg_{0.5}W_{0.5})O_3$ - $0.12Pb(Sb_{0.5}Nb_{0.5})O_3$ - $0.85Pb(Zr_{0.52}Ti_{0.48})O_3$ + $0.5[wt%]MnO_2$ ceramics dropped with additive CuO after manufacturing the specimens with a general method. It is shown that X-ray diffraction pattern variation of lines (211) have tendency to move minutely by addition of additive CuO. According to dropping with Cu, the dielectric constant at 20[$^{\circ}C$] reduced to CuO 3.0[wt%]. In case of sintering at 1050[$^{\circ}C$], dielectric constant was maximum value 623.59 at CuO 1.0[wt%]. Dielectric loss was maximum value 2.7[%] at Cu 2.0[wt%] in case of sintering at 1050[$^{\circ}C$].

• Economic and Environmental Geology
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• v.31 no.4
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• pp.349-360
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• 1998

The alkali granite occurred as small stock and dyke is distributed in the Kyeomyeongsan Formation in the vicinity of the Chungju city. Geochemical characteristics in major and trace element of alkali granite in the Kyeomyeongsan Formation indicate that the alkali granites are peralkaline and have similar geochemical features to the A-type alkali granite. The rock enriched in HFSE such as Zr, Nb, Y, REE etc. According to the discrimination diagram the alkali granites mostly belong to the within-plate granite field, and to the $A_1$ group of A-type granite. This suggests that they might be emplaced in a extentional rift environment. The alkali granites are characterized by remarkably high total REE content, and enriched, relatively flat to somewhat HREE-depleted patterns with large negative Eu anomaly. The Sm-Nd age of the alkali granite is $338{\pm}30Ma$ with ${\varepsilon}_{Nd(t)}$ beings -7.3 to -8.5. On the basis of the geochemical studies the source magma was derived from a enriched mantle-like source and had a few or clearly interaction with sialic continental crust. In conclusion, the alkali granitic rock of the Kyeomyeongsan Formation might be formed from the high F peralkaline magma that was emplaced in continental rift environment, and generated at the early Carboniferous.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.972-975
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• 2001

The effect of Cr$_2$O$_3$(0 to 0.5 wt%) doping on the microstructure and electrical properties of ternary Pb(Zr,Ti)O$_3$-Pb(Ni,Nb)O$_3$piezoelectric ceramic has been investigated. Abnormal grain growth (grain size 3.3 to 11.2 $\mu$m) and densification are found. Minor additives of $\leq$0.1 wt% improve the mechanical coupling factor, but with more additives of $\geq$0.2 wt% electrical properties deteriorate. Thus, these phenomna can be ascribed mainly to anomalous developed microstructure. The large grains were composed of a core region that is free of Cr and a surrounding shell region rich in Cr. The interfaces between the core and the shell were composed of misfit dislocations. The mechanical properties of the specimens were strongly influenced by this microstructural change. The microstrutural and compositonal evolution of the specimens containing different amounts of Cr$_2$O$_3$were monitored. Electrical properties were measured and related to the variations in the microstructure.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.65-73
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• 1992

The effect of grain size on the time-dependent piezoelectrice degradation of a poled PZT of MPB composition Pb0.988Sr0.012 (Zr0.52Ti0.48)O3 with 2.4 mol% of Nb2O5 was studied, and the degradation mechanism was discussed. Changes in the internal bias field and the internal stress both responsible for the time-dependent degradation of poled PZT were examined by the polarization reveral technique, XRD and Vickers indentation, respectively. The piezoelectric degradation increased with increasing time and grain size, and the internal bias field due to space charge diffusion decreased with increasing grain size of poled PZT. The internal bias field, however, was almost insensitive to the degradation time regardless of the grain size. On the other hand, both the x-ray diffraction peak intensity ratio of (002) to (200) and the fracture behavior including the crack propagation support that the ferroelectric domain rearrangement of larger grain size showed rapid relaxation of the internal stress compared with smaller one, which is thought the origin of the larger piezoelectric degradation in the former. In conclusion, the contribution of space charge diffusion on the piezoelectric degradation of PZT is strongly dependent on both the grain size and the composition. Thus, the relaxation of internal stress due to the ferroelectric domain rearrangement as well as the amount and time-dependence of the internal bias field due to space charge diffusion should be considered simultaneously in the degradation mechanism of PZT.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.368-375
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• 1995

Thermal CVD method is in general used for the fabrication of TiC/$Al_2O_3$-coated carbide tools. The growth of TiC layer and the coating morphology depended on the chemical composition of the hard metal substrate on which the tool properties were strongly influenced. TiC-coated layer was grown by the diffusion of carbon from the substrate, whereas the growth of $Al_2O_3$ layer was unrelated to the composition of substrate. In the nitride hard coatings of Zr, Nb and Mo metals deposited on high speed steel substrate by magnetron sputtering, the reactivity of the metal elements was decreased with increasing group number in one period of the periodic system. The hard material films exhibited the highest adhesion with the chemical composition of stoichiometry or substoichiometry. The critical load as a measure of adhesion was evaluated using scratch tester. The CVD tools indicated the values of 80 and 40N in the coated layers with proper bonding to the substrate and with $\eta$ phase of 1$\mu\textrm{m}$ in the interface respectively, but the nitride films prepared by sputtering of PVD showed only the values between 10 and 20N.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.163-168
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• 2003

In the present study, the piezoelectricity and polarization of multilayer ceramic actuator, being designed to stack PMN-PZ-PT ceramic layers and Ag-Pd electrode layers alternatively, were investigated under a consideration of geometric factor, the volume ratio of the ceramic to the electrode layers. The actuators were fabricated by tape casting of $0.2Pb(Mg_{1/3}Nb_{2/3)O_3-0.38PbZrO_3-0,42PbTiO_3$ followed by lamination and burnout & co-firing processes. The actuators of $10\times10\times0.6~2\textrm{mm}^3$ in size were formed in a way that $60 ~ 200\mu\textrm{m}$ thick were stacked alternatively with $5\mu\textrm{m}$ thick electrode layer. Increases in polarization and electric field-induced displacement with thickness of the ceramic layer were attributed to change of $90^{\circ}$/$180^{\circ}$ domain ratio, which was affected by interlayer internal stress. The piezoelectricity and actuation behaviors were found to depend upon the volume ratio (or thickness ratio) of ceramic to electrode layers.