• Title/Summary/Keyword: Zr-$TiO_2$

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A Comparison of Structural Characterization of Composite Alumina Powder Prepared by Sol-Gel Method According to the Promoters (졸-겔법으로 제조된 복합 알루미나 미분체의 첨가제에 의한 구조적 특성 비교)

  • Lee, Jung-Woon;Yoon, Ho-Sung;Chae, U-Suk;Park, Han-Jin;Hwang, Un-Yeon;Park, Hyung-Sang;Park, Dal-Ryung;Yoo, Seung-Joon
    • Korean Chemical Engineering Research
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    • v.43 no.4
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    • pp.503-510
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    • 2005
  • In this research, composite alumina was prepared to add the various promoters by sol-gel method and examined its thermal stability. After sintering at $1,200^{\circ}C$, the thermal stability resulted in following order, $Si{\fallingdotseq}La$ > Ti > $Ba{\fallingdotseq}Ce$ > Y > $Zr{\fallingdotseq}Mg$, in accordance with adding the promoters. Especially in case of silica-added alumina, a phase transformation temperature to ${\alpha}$-alumina increased about $150^{\circ}C$ and after sintering at $1,200^{\circ}C$, it showed to maintain in ${\gamma}$-form and ${\delta}$-form alumina phase. Also it showed an increase of surface area from $3m^2/g$ to $71m^2/g$ compared with pure ${\alpha}$-alumina. In the case of silicaadded alumina, the characterization change of this alumina particle resulted in a delay of phase transformation because Si-O-Al bond was increased when sintered at high temperature. In case of lanthanum-added alumina, there was a sintering delay phenomenon in inter-particles as $LaAlO_3$ structure existed. The existence of lanthanum structure was confirmed by XRD and XPS analysis. It appeared on the alumina surface as $La_2O_3$ structure when it was sintered under $1,000^{\circ}C$, as the perovskite structure of $LaAlO_3$ at above $1,000^{\circ}C$ and as the magneto-plumbite structure of $LaAl_{11}O_{18}$ at above $1,300^{\circ}C$.

Etching Property of the TaN Thin Film using an Inductively Coupled Plasma (유도결합플라즈마를 이용한 TaN 박막의 식각 특성)

  • Um, Doo-Seung;Woo, Jong-Chang;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.104-104
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    • 2009
  • Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

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Piezoelectric property variation with respect to the frit addition for lower temperature sintering in PNW-PMN-PZT ceramic system (PNW-PMN-PZT 압전 세라믹의 저온소결을 위한 프리트 첨가 압전 특성평가)

  • Ryu, Sung-Lim;Kwon, Soon-Yong;Woo, Duck-Hyun;An, Sang-Gi;Jeong, Ji-Hyun;Um, Ju-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.191-191
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    • 2008
  • 강유전성 세라믹스 재료로써는 PZT계열의 세라믹재료가 널리 쓰이고 있다. 이는 우수한 유전 및 압전특성을 가지고 있으나, PbO을 다량 함유하고 있어 $1000^{\circ}C$이상에서 PbO가 급격하게 휘발되는 성질 때문에 조성의 변동이 생겨 재현성이 어려우며 이를 방지하기 위하여 PbO를 과잉 첨가시키기 때문에 PbO휘발로 인한 강한 독성이 인체에 유해하고, 비환경 친화적인 물질로 최근에는 환경문제가 대두됨에 따라 대체 또는 보완 할 수 있는 방안에 검토되고 있다. 본 연구는 그 해결책의 한 방안으로 압전특성이 우수한 $(Pb_{0.94}Sr_{0.06})[(Ni_{1/2}W_{1/2})_{0.02}(Mn_{1/3}Nb_{2/3})_{0.07}(Zr_{0.51}Ti_{0.49})_{0.91}]O_3$계 조성을 설계하고 Glass frit(0~1.1 wt%)를 소량 첨가하여 액상 소결 특성을 부여하고 $1000^{\circ}C$ 이하의 저온에서 소결하여 유전 및 압전 특성을 평가하였다. 실험방법은 일반적인 세라믹스 제조공정으로 24시간 ball milling하고 $850^{\circ}C$에서 2시간 하소 후 Glass frit를 소결조제로 소랑 첨가하여 $1000^{\circ}C$ 이하 온도에서 소결을 진행하여 각 소결온도에 따른 유전 및 압전 특성을 평가하였다. 최종 소결된 시편의 밀도와 수축율을 분석하여 최적의 소결온도를 확립하였으며 XRD분석을 통해 perovskite구조를 확인하고 미세구조확인을 위해 SEM으로 관찰하였다. 압전 특성을 평가하였다.

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A Geochemical Study on Pyrophyllite Deposits and Andesitic Wall-Rocks in the Milyang Area, Kyeongnam Province (경남 밀양지역 납석광상과 안산암질 모암의 지구화학적 연구)

  • Oh, Dae-Gyun;Chon, Hyo-Taek;Min, Kyoung-Won
    • Economic and Environmental Geology
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    • v.25 no.1
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    • pp.27-39
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    • 1992
  • Several pyrophyllite deposits occur around the Milyang area where Cretaceous andesitic rocks and spatially related granitic rocks are widely distributed. Pyrophyllite ores consist mainly of pyrophyllite, and quartz with small amount of sericite, pyrite, dumortierite, and diaspore. The andesitic rocks and spatially related granitic rocks in this area suggest that they could be formed from the same series of a calc-alkaline magma series. The contents of $SiO_2$, $Al_2O_3$, LOI(loss on ignition) are enriched, and $K_2O$, $Na_2O$, CaO, MgO, $Fe_2O_3$ are depleted in altered andesitic rocks and ores. Enrichment of As, Cr, Sr, V, Sb and depletion of Ba, Cs, Ni, Rb, U, Y, Co, Sc, Zn are characteristic during mineralization. The pyrophyllite ores can be discriminated from the altered-and unaltered wall-rocks by an increasing of $(La/Lu)_{cn}$ from 4.18~22.13 to 8.98~55.05. In R-mode cluster analysis, Yb-Lu-Y, La-Ce-Hf-Th-U-Zr, $TiO_2-V-Al_2O_3$, Sm-Eu, $CaO-Na_2O-MnO$, Cu-Zn-Ag, $K_2O-Rb$ are closely correlated. In the discriminant analysis of multi-element data, $P_2O_5$, As, Cr and $Fe_2O_3$, Sr are helpful to identify the ores from the unaltered-and altered wall-rocks. In the factor analysis, the factors of alteration of andesitic rocks and ore mineralization were extracted. In the change of ions per unit volume, $SiO_2$, $Al^{3+}$ and LOI are enriched and $Na^+$, $K^+$, $Ca^{2+}$, $Mg^{2+}$, $Mn^{2+}$ and $Fe^{3+}$ are depleted during the alteration processes. The Milyang and the Sungjin pyrophyllite deposits could be mineralized by hydrothermal alteration in a geochemical condition of low activity ratio of alkaline ions to hydrogen ion with reference to spatially related granitic rocks.

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Microstructure and Piezoelectric Properties of Low Temperature Sintering PMW-PNN-PZT-BF Ceramics According to PNN Substitution (PNN 치환에 따른 PMW-PNN-PZT-BF 세라믹스의 미세구조와 압전 특성)

  • Sin, Sang-Hoon;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.2
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    • pp.90-94
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    • 2016
  • In this work, [$Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_x(Zr_{0.5}Ti_{0.5})_{0.97-x}O_3-BiFeO_3$] (x=0.02 to 0.12) composition ceramics were fabricated by the conventional soild state reaction method and their microstructure and piezoelectric properties were investigated according to PNN substitution. The addition of small amount of $BiFeO_3$, $Li_2CO_3$, and $CaCO_3$ were used in order to decrease the sintering temperature of the ceramics. The XRD (x-ray diffraction patterns) of all ceramics exhibited a perovskite structure. The sinterability of PMW-PNN-PZT-BF ceramics was remarkably improved using liquid phase sintering of $CaCO_3$, $Li_2CO_3$. However, it was identified from of the X-ray diffraction patterns that the secondary phase formed in grain boundaries decreased the piezoelectric properties. According to the substitution of PNN, the crystal structure of ceramics is transformed gradually from a tetragonal to rhombohedral phase. The x=0.10 mol PNN-substituted PMW-PNN-PZT-BF ceramics sintered at $920^{\circ}C$ showed the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33{\cdot}}g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=566$ [pC/N], $g_{33}=29.28[10^{-3}mV/N]$, $d_{33{\cdot}}g_{33}=16.57[pm^2/N]$, $k_p=0.61$, density=7.82 [$g/cm^3$], suitable for duplex ultrasonic sensor application.

The Characteristics of PZ-PT-PWN Piezoelectric Ceramics for Application to High Power Device (고출력 압전 디바이스 응용을 위한 PZ-PT-PMN계 압전 세라믹의 특성)

  • Jeong, Su-Hyeon;Hong, Jong-Guk;Lee, Jong-Seop;Chae, Hong-In;Yun, Man-Sun;Im, Gi-Jo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.3
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    • pp.155-160
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    • 2000
  • The piezoelectric properties and the doping effect for$0.95Pb(Zr_xTi_{1-x})O_3+0.05Pb(Mn1/3Nb2/3)O_3$ compositions were studied. Also, the heat generation and the change of electromechanical characteristics, the important problem in practical usage, were investigated under high electric field driving. As a experiment results under low electric field, the values of kp and $\varepsilon33T$ were maximized, but Qm was minimized(Kp=0.57, Qm=1550) in the composition of x=0.51. In order to increase the values of Qm $Nb_2O_5$ was used as a dopant. As the result of that, the grain size was suppressed and the uniformity of grain was improved. Also, the values of kp decreased, and the values of Qm increased with doping concentration of $Nb_2O_5$. As a experiment results under high electric field driving, when vibration velocity was lower than 0.6[m/s], the temperature increase was $20[^{\circ}C]$, and the change ratio of mechanical quality factor was less than 10[%]. So, its electromechanical characteristics was very stable. Conclusively, piezoelectric ceramic composition investigated at this paper is suitable for application to high power piezoelectric devices.

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Properties of Piezoelectric thick film with detailed structure following particle size (입자 크기에 따른 미세구조를 가지는 압전 후막 특성)

  • Moon, Hi-Gyu;Song, Hyun-Cheol;Kim, Sang-Jong;Choi, Ji-Won;Kang, Jong-Yoon;Kim, Hyun-Jai;Jo, Bong-Hee;Yoon, Seok-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.325-325
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    • 2008
  • 스크린 프린팅에 의한 압전 후막은 MEMS 공정을 이용하여 마이크로 펌프, 마이크로 벨브, 마이크로 센서, 마이크로 로봇 등 여러 초소형 기계부품에 응용되고 있으며, Sol-Gel, PLD를 이용해 증착된 막 등에 비해 수십${\mu}m$의 비교적 두꺼운 막을 형성시킬 수 있는 장점을 가지고 있다. 그러나 실리콘 기판을 사용하여 스크린 프린팅으로 형성된 압전 후막의 경우, 공정상 바인더를 연소시키는 과정을 거치게 되므로, 밀집된(Dense) 구조를 가지는 막을 만들기가 어렵다. 이로 인해 스크린 프린팅에 의한 후막은 전기적 특성 및 기계적 특성이 떨어지는 경향이 있다. 본 연구에서는 스크린 프린팅에 의한 압전 후막의 밀집된 구조 및 특성을 향상시키기 위해 0.01Pb$(Mg_{1/2}W_{1/2})$O3-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3-0.35PbTiO_3-0.23PbZrO_3$의 powder와 Attrition 밀링 처리된 powder를 비율별로 혼합하여 입자의 크기를 변화시켜 막의 충진 밀도를 향상시켰으며, 열처리 효과를 극대화시키기 위해 RTA(Rapidly Thermal Annealing)를 통해 열처리 하였다. Attrition 밀링에 의한 파우더를 각각 비율별로 100%, 50%, 25%로 혼합하여 만든 압전 세라믹 페이스트는 P-type(100)Si Wafer sample 위에 $1{\mu}m$의 하부전극용($1100^{\circ}C$) Ag 전극을 screen print하여 소결했다. 그리고 다시 전극이 형성된 Si wafer 위에 스크린 프린팅하고, 건조 한 후 RTA로 300초 동안 열처리 한 결과 밀집된 구조를 가지는 압전 후막을 제작 수 있었다.

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Fabrication and characteristics of modified PZT System doped With $La_2O_3$ ($La_2O_3$가 첨가된 modified PZT계의 제조 및 특성)

  • 황학인;박준식;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.3
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    • pp.418-427
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    • 1997
  • The effect of $La_2O_3$ as a dopant on the microstructure structure, crystal structure and electrical properties was studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3+0.11PbTiO_3+0.84PbZroO_3+0.4Wt%MnO_2$ (=0.05PSS +0.11PT+0.84PZ+0.4wt%$MnO_2$) systems doped with 0, 0.1, 0.3, 0.5, 0.7, 1, 3, 5 mole% $La_2O_3$ were fabricated and investigated sintering density, crystal structure and micro-structure. The sintered 0.05PSS+0.11PT+0.84PZ+0.4wt%$MnO_2$ system doped with $La_2O_3$showed sintering density of the range of 7.683 g/㎤ of 0 mole% doping to 7.815 g/㎤ of 0 mole% doping. The average grain sizes in the range of 0 to 5 mole% $La_2O_3$were decreased from 9.0 $\mu\textrm{m}$ to 1.3 $\mu\textrm{m}$. X-ray diffraction investigation of sintered bodies showed that solid solutions were formed between 0.05PSS+0.11PT+0.84PZ+0.4wt%$MnO_2$ system and $La_2O_3$ in the range of 0 to 1 mole% but second phases were formed in case of 3, 5 mole%. Dielectric constants at 1 kHz were increased with 0 to 3 mlole% $La_2O_3$ before and after poling at the condition of 5 $KV_{DC}$/mm at $120^{\circ}C$ or $140^{\circ}C$ during 20 minutes. All Dielectric losses at 1 kHz were less than 1%, Curie temperatures were $208^{\circ}C$, $183^{\circ}C$, $152^{\circ}C$ and $127^{\circ}C$ at 0, 0.5, 1, 3 mole% $La_2O_3$ respectively. The values of $K_p$ were increased from 0 to 3 mole% $La_2O_3$ after poling at condition of 5 $KV_{DC}$mm at the condition of $120^{\circ}C$ or $140^{\circ}C$. The case of 0.7 mole% $La_2O_3$doped 0.05PSS+0.11PT+0.84PZ+0.4wt%$MnO_2$ system showed $K_p$ of 14.5% by poling at $140^{\circ}C$ during 20 minutes.

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Low-temperature solution-processed aluminum oxide layers for resistance random access memory on a flexible substrate

  • Sin, Jung-Won;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.257-257
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    • 2016
  • 최근에 메모리의 초고속화, 고집적화 및 초절전화가 요구되면서 resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), phase change RAM (PRAM)등과 같은 차세대 메모리 기술이 활발히 연구되고 있다. 다양한 메모리 중에서 특히 resistive random access memory (ReRAM)는 빠른 동작 속도, 낮은 동작 전압, 대용량화와 비휘발성 등의 장점을 가진다. ReRAM 소자는 절연막의 저항 스위칭(resistance switching) 현상을 이용하여 동작하기 때문에 SiOx, AlOx, TaOx, ZrOx, NiOx, TiOx, 그리고 HfOx 등과 같은 금속 산화물에 대한 연구들이 활발하게 이루어지고 있다. 이와 같이 다양한 산화물 중에서 AlOx는 ReRAM의 절연막으로 적용되었을 때, 우수한 저항변화특성과 안정성을 가진다. 하지만, AlOx 박막을 형성하기 위하여 기존에 많이 사용되어지던 PVD (physical vapour deposition) 또는 CVD (chemical vapour deposition) 방법에서는 두께가 균일하고 막질이 우수한 박막을 얻을 수 있지만 고가의 진공장비 사용 및 대면적 공정이 곤란하다는 문제점이 있다. 한편, 용액 공정 방법은 공정과정이 간단하여 경제적이고 대면적화가 가능하며 저온에서 공정이 이루어지는 장점으로 많은 관심을 받고 있다. 본 연구에서는 sputtering 방법과 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서 메모리 특성을 비교 및 평가하였다. 먼저, p-type Si 기판 위에 습식산화를 통하여 SiO2 300 nm를 성장시킨 후, electron beam evaporation으로 하부 전극을 형성하기 위하여 Ti와 Pt를 각각 10 nm와 100 nm의 두께로 증착하였다. 이후, 제작된 AlOx 용액을 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30 초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였고, 상부 전극을 형성하기 위해 shadow mask를 이용하여 각각 50 nm, 100 nm 두께의 Ti와 Al을 electron beam evaporation 방법으로 증착하였다. 측정 결과, 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서는 기존의 sputtering 방법으로 제작된 ReRAM에 비해서 저항 분포가 균일하지는 않았지만, 103 cycle 이상의 우수한 endurance 특성을 나타냈다. 또한, 1 V 내외로 동작 전압이 낮았으며 104 초 동안의 retention 측정에서도 메모리 특성이 일정하게 유지되었다. 결론적으로, 간단한 용액 공정 방법은 ReRAM 소자 제작에 많이 이용될 것으로 기대된다.

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Temporal variation of magma chemistry in association with extinction of spreading, the fossil Antarctic-Phoenix Ridge, Drake Passage, Antarctica

  • Choe, Won-Hie;Lee, Jong-Ik;Lee, Mi-Jung;Hur, Soon-Do;Jin, Young-Keun
    • 한국지구과학회:학술대회논문집
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    • 2005.09a
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    • pp.136-141
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    • 2005
  • The K Ar ages, whole rock geochemistry and Sr Nd Pb isotopes have been determined for the submarine basalts dredged from the P2 and P3 segments of the Antarctic-Phoenix Ridge (APR), Drake Passage, Antarctica, for better understanding on temporal variation of magma chemistry in association with extinction of seafloor spreading. The fossilized APR is distant from the known hot spots, and consists of older N-MORB prior to extinction of spreading and younger E-MORB after extinction. The older N-MORB (3.5-6.4 Ma) occur in the southeast flank of the P3 segment (PR3) and the younger E-MORB (1.4-3.1 Ma) comprise a huge seamount at the P3 segment (SPR) and a big volcanic edifice at the P2 segment (PR2). The N-type PR3 basalts have higher Mg#, K/Ba, and CaO/Al2O3 and lower Zr/Y, Sr, and Na8.0 with slight enrichment in incompatible elements and almost flat REE patterns. The E-type SPR and PR2 basalts are highly enriched in incompatible elements and LREE. The extinction of spreading occurring at 3.3 Ma seems to have led to a temporal magma oversupply with E-MORB signatures. Geochemical signatures such as Ba/TiO2, Ba/La, and Sm/La suggest heterogeneity of upper mantle and formation of E-MORB by higher contribution of enriched materials to mantle melting, compared to N-MORB environment. E-MORB magmas beneath the APR seem to have been produced by low melting degree (up to 1% or more) at deeper low-temperature regime, where metasomatized veins consisting of pyroxenites have preferentially participated in the melting. The occurrence of E-MORB at the APR is a good example to better understand what kinds of magmatism would occur in association with extinction of spreading.

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