• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.123-123
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• 2003

나노튜브는 반도체 재료로서 뿐만 아니라 다른 분야로까지 다양한 응용범위를 가진 물질로서 기존에는 주의 탄소를 사용하여 제작, 사용되어지고 있으나 게이트옥사이드(Gate Oxide) 물질인 지르코니아(ZrO$_2$), 타이타니아(TiO2$_2$) 등을 이용한 나노튜브는 많이 제작되어지고 있지 못하다. 따라서 보다 나은 성질을 갖는 물질로서 나노튜브를 제작할 시 반도체 재료에서의 고집적화를 통해 좋은 성질을 갖게 할 수 있으며 여러 분야로까지 확대가 가능한 재료를 사용하여 광학 및 환경분야 등 응용범위를 넓힐 수 있다. 본 실험은 나노튜브 제작에 있어서 템플레이트의 구멍 내부를 ALD 기술을 이용하여 균일한 두께를 갖는 금속 산화물층을 성장시킨 후 템플레이트 재료의 식각을 통해 금속산화물 나노튜브가 남아있게 하여 제작하는 방법이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.161-164
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• 2004

In this study, to develop the composition ceramics for the Ultrasonic vibrator, $Pb(Mn_{1/3}Nb_{2/3})O_3Pb(Zr.Ti)O_3$ system ceramics were manufactured as a function of PCN substitution. Its dielectric and piezoelectric characteristics were investigated. With increasing the amount of PCN substitution, electromechanical coupling factor(kp) were increased until 3mol% PCN and that after decreased. mechanical quality factor(Qm) showed the maxinum value at 2mol% PCN. Eletromechanical coupling factor, mechanical quality factor and dielectric constant were showed optimum value at PCN 2mol% as 0.58, 1630 and 1407, respectively for ultrasonic vibrator applications.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.18-23
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• 2001

For the piezoelectric transformer application, Pb(Sb$\_$1/2/ Nb$\_$1/2/)O$_3$-Pb(Zr,Ti)O$_3$ ceramics were produced by attrition milling. Microstructural, dielectric and piezoelectric characteristics of the ceramics were investigated as a function of milling time. The particle size and grain size decreased while dielectric constant, density and mechanical quality factor (Q$\_$m/) increased with milling time. Temperature coefficient of resonant frequency (TCf$\_$r/) was shifted to positive side with increasing milling time. The attrition milling process proved to be one of the effective routes to produce transformers for high power application.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2005.05a
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• pp.35-39
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• 2005

This paper presents a method to reduce hysteresis in multilayer ceramic actuator by connecting the actuator with a capacitor in a series circuit. The change in hysteresis with respect to the capacitor was examined. $0.2Pb(Mg_{1/3}Nb_{2/3})O_3-0.8Pb(Zr_{0.475}Ti_{0.525})O_3$ ceramic material was used as a piezoelectric material for the actuator. Displacement of the actuator was measured in a capacitive gap sensor measuring system. In case of inserting a capacitor in a total circuit, hysteresis became dramatically decreased, and then finally the hysteresis value can be reduced below $0.2\%$. It was found in this present study that reducing the hysteresis in the actuator is dependent upon the characteristics of the capacitor in total circuit and also operating frequency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.245-247
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• 1996

The ferroelectric $Pb(Zr_xTi_{1-x})O_3$ (20/80, 80/20) heterolayered thin films were fabricated from an alkoxide-based by Sol-Gel method. The PZT(20/80) and PZT(80/20) stock solution were made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. Each layers were baked to remove the organic materials at 300[$^{\circ}C$] for 30[min]. and sintered at 650[$^{\circ}C$] for 1[hr]. This procedure was repeated 5 times. At this time the thickness of thin films were about 4000[$\AA$]. Relative dielectric constant and remanent polarization of the PZT heterolayered thin films were 1200, 27.10 [${\mu}C/cm^2$], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.136-139
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• 1999

The post-annealing treatments on RF (Radio Frequency) magnetron sputtered PZI(Pb$\_$1.05/(Zr$\_$0.52/, Ti$\_$0.48/)O$_3$thin films(4000${\AA}$) have been investigated. for a structure of PZT/Pt/Ti/SiO$_2$/Si Crystallization pproperties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature. We were able to obtain a perovskite structure of PZT at a low temperature of 600$^{\circ}C$. P-E curves of Pd/PZT/Pt capacitor annealed at 700$^{\circ}C$ demonstrate typical hysteresis loops. The measured values of P$\_$r/, E$\_$c/, by post annealed at 700$^{\circ}C$ were 12.1 ${\mu}$C/$\textrm{cm}^2$, 120KV/cm respectively.

• Bulletin of the Korean Chemical Society
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• v.18 no.1
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• pp.56-61
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• 1997

Lead zirconate titanate (PZT) thin fills were deposited onto the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition with the second harmonic wavelength (532 nm) of Nd:YAG laser. In order to determine the optimum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temperature, and laser fluence. Also the chemical composition analysis was conducted for the PZT films deposited under various ambient oxygen pressure. When the distance between substrate and bulk PZT target is set to 20 mm, the optimum conditions have been determined to be 3 torr of oxygen pressure, 1.5 J/cm2 of laser fluence, and 823-848(±10) K range of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition of the films is very similar to that of PZT bulk target. The physical structure of the deposited films analyzed by scanning electron microscopy shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 μm thickness of PZT thin film.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.293-295
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• 1991

In this study, we investigated the possibilty that $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3$ ceramics with strontium substitutions could be used for piezoelectric sounders. Piezoelectric buzzer is one of them. By partially substituting Sr for Ph, dielectric constants had values greater than 2000, the value proper piezoelectric buzzer, piezoelectric constant($d_{31}$) had a maximum value, 298 $[10^{-12}C/N]$, at the Sr 5 mol % substitution. Sound level of piezoelectric buzzer had the highest value of 91 dB at the Sr 5 mol % substitution.