• KSBB Journal
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• v.13 no.5
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• pp.477-482
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• 1998

A biosensor with PZT piezoelectric ceramic crystal was developed for the detection of formaldehyde gas. Poled PZT piezoelectric ceramic disk was made from ZrO2, TiO2 and Nb2O5, together with the addition of PbO and polyvinyl alcohol, through various processes of mixing, calcination drying, crushing, forming, sintering, polishing, ion coating and poling. Oscillator circuit of sensor was made of operational amplifier(AD811AN). Formaldehyde dehydrogenase was immobilized onto a piezoelectic ceramic crystal, together with the cofactors, reduced glutathione and nicotinamide adenine dinucleotide. The effect of flow rate on the sensitivity was determined by varing the flow rate of carrier gas from 24.7mL/min to 111.7mL/min through detector cell. The results indicated that as the flow rate was increased, the recovery rate was increased. And a significant increase in the sensitivity was observed in enhanced flow rate of carrier gas. Frequency difference(ΔF) of immobilized PZT piezoelectic disk increased proportionally to the concentration gas and reproduced to repeated exposures of formaldehyde gas(28ppm, Δ68Hz).

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.1
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• pp.8-12
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• 1999

$\textrm{WO}_3$ semiconductive film, which is known to have a sensitivity on $\textrm{NO}_X$ gas was prepared on 8YSZ (8% Yttria stabilized $\textrm{ZrO}_2$) ionic conductor substrate that has oxygen ion pumping effect. Microstructure and electrical properity, especially $\textrm{NO}_X$ sensitivity as a function of DC voltage applied to 8YSZ substrate was examined. When the $\textrm{WO}_3$ film was annealed, it showed amorphous structure, while crystallization was occurred at $600^{\circ}$C revealing orthorhombic phase of $\textrm{WO}_3$. As the annealing temperature increases, (111) and (001) peaks of $\textrm{WO}_3$ film was enhanced. At $400^{\circ}C$ when DC voltage was applied, comparing with no DC bias, more stable and large response characteristics was showed, and the best sensitivity was observed at 2V. Recovery characteristics of NO gas was much better that that of $\textrm{NO}_2$ gas.

• Analytical Science and Technology
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• v.12 no.6
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• pp.490-497
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• 1999

A hydrogen determinator was modified and installed in the glove box to analyse total hydrogen content in irradiated zircaloy tube. The analysis method of hydrogen is Inert Gas Fusion(IGF)-Thermal Conductivity Detection(TCD). The hydrogen recoveries of no tin method using Ti and Zr matrix standards, respectively, were available within $3{\mu}g$ of hydrogen. Also the smaller size of sample showed the better hydrogen recovery. It was found that the hydrogen standard of Ti matrix is avaliable to hydrogen analysis in zircaloy sample. The mean radioactivity of irradiated zircaloy sample was 10 mR/hr and hydrogen concentration was 130 ppm.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.151-154
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• 2001

The leakage current behaviors of PLZT capacitors with top electrodes of Pt, Ir, and $IrO_2$ are investigated before and after hydrogen forming gas anneal. The P-E hysteresis and fatigue properties of Pt/PLZT/Pt capacitors are almost recovered after recovery anneal in $O_2$ ambient. The leakage current mechanisms of PLZT capacitors with Pt and $IrO_2$ top electrodes are consistent with space-charge influenced injection model showing the strong time dependence irrespective of annealing conditions. On the other hand, the leakage current behavior of Ir/PLZT/Pt capacitor shows steady state independent of time because IrPb, conducting phase, formed at interface between Ir top and PLZT is a high conduction path. Teh leakage current mechanism of Ir/PLZT/Pt capacitor is consistent with Schottky barrier model.

• Analytical Science and Technology
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• v.13 no.4
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• pp.446-452
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• 2000

The simulated nuclear spent fuel (SIMFUEL) containing the platinum group elements which will not be dissolved in a nitric acid was completely dissolved with a acid digestion bomb. The metallic elements separated in the SIMFUEL were measured by inductively coupled plasma atomic emission spectrometry (ICP-AES). Because the peaks of metallic elements were spectrally interfered by uranium spectrum, uranium and metallic elements were separated by cation exchange resin for Mo, Pd, Rh and Ru and by anion exchange resin for Ba, Ce, La, Nd, Rh, Sr, Y and Zr, respectively. The recovery of Mo, Pd, Rh and Ru after separation by cation exchange chromatography found to be 99-103% and anion exchange separation showed 96.5-107% of recovery except Y with the simulated solution whose concentration was similar to the spent nuclear fuel. The relative standard deviation of this method showed 1.3-6.7% in the SIMFUEL whose concentrations of metallic elements were between several $10^2-10^3$ppm.

• Resources Recycling
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• v.31 no.1
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• pp.46-55
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• 2022

The recycling of coated cemented carbide scraps is becoming increasingly significant for the recovery of rare metals. However, coatings consisting of Group IV and V transition metal nitrides are one of the challenging factors in obtaining high-purity materials. We investigated the structural, elastic, and mechanical properties of Group IV and V transition-metal nitrides (TiN, VN, ZrN, NbN, HfN, and TaN) using first-principle calculations. Convergence tests were performed to obtain reliable calculated results. The equilibrium structures of the nitrides were in good agreement with those of a previous study, indicating the reliability of the data. Group IV transition metal nitrides show a higher covalent bonding nature. Thus, they exhibit a higher degree of brittleness than that of Group V transition metal nitrides. In contrast, Group V transition metal nitrides show weaker resistance to shear loading and more ductile behavior than Group IV transition metal nitrides because of the metallic bonds characterized by valence electron concentration. The results of the crystal orbital Hamilton population analysis showed good agreement with the shear resistance tendencies of all transition metal nitrides.

• Korean Chemical Engineering Research
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• v.48 no.3
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• pp.316-321
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• 2010

The $SO_2$ catalytic reduction was carried out under the condition of high pressure in this study. Sn-Zr based oxide and CO were used as the catalyst and reducing agent for the reduction of $SO_2$ to element sulfur, respectively. In order to compare the reactivity with the pressure on the catalytic process, the reactivity tests were performed under the conditions of atmospheric pressure and 20 atm. $SO_2$ conversion, the element sulfur yield and COS selectivity were also compared with changing the reaction temperature, $CO/SO_2$ mole ratio and the space velocity(GHSV). $SO_2$ conversion increased with increasing temperature and $CO/SO_2$ mole ratio under the condition of atmospheric pressure and element sulfur yield decreased due to the production of COS by the series reaction of CO and the produced sulfur. However, high $SO_2$ conversion and high element sulfur were obtained under the condition of 20 atm. It was concluded that COS decreased due to the condensation of the produced element sulfur under the condition of high pressure. Therefore, the high sulfur yield for $SO_2$ catalytic reduction could be profitably obtained under the condition of high pressure.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.524-534
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• 1994

The effects of transformation temperature and mechanical properties by thermal cycle of CuZnAl shape memory alloy with a small of misch metal and Zr contents were investigated. The addition of misch metal and Zr was very effective for reducing the grain size. After solution treatment, the specimens were post-quench aged or step quenched at $100^{\circ}C$ to $350^{\circ}C$ for variation of Rockwell hardness value. It was found that the Rockwell hareness value was very increased at $200^{\circ}C$ and $250^{\circ}C$. The fracture strength and ductility have been significantly increased with the increase of misch metal conten when tensile tested below $M_f$ temperature. Also, the fracture strength has been more increased in the case of post quench aging treatment than that of the as-quenching treatment. Aging of the $\beta$-phase decreases the $M_s$ temperature, but that of the martensite phase increases the $A_s$ temperature. The change in $A_s$ temperature with post-quench aging can be attributed to recovery of order in the $\beta$phase. The hystersis of transformation temperature ($A_s-M_s$) has an increasing tendency by thermal cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.21-25
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• 2001

In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.21-25
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• 2001

In this study, recovery of plasma etching damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of Cl$_2$/CF$_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450$\AA$/min at 30% additive Ar into (Cl$_2$(80%)+CF$_4$ (20%)) and 1100$\AA$/min at 10% additive $O_2$ into C(Cl$_2$(80%)+CF$_4$ (20%)). In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of Ti$_{x}$O$_{y}$ is recovered by $O_2$ recombination during rapid thermal annealing process.s.s.