• 한국자기학회지
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• 제15권4호
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• pp.231-235
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• 2005

Al에 Zr과 Nb 또는 Zr과 Ti을 첨가한 삼원계 산화층을 절연층으로 사용한 자기터널접합(Magnetic Tunnel Junction, MTJ)에서, 각 원소의 비율에 따른 자기적 특성과 절연층의 미세구조 특성을 연구하였다. $(ZrNb)_{0.1}Al_{0.9}$ 및 $(ZrTi)_{0.1}Al_{0.9}$ 삼원계 산화 절연층을 가진 자기터널접합의 자기저항비는 Nb, 또는 Ti과 Zr의 첨가 비율이 1 : 1에 가까워질수록 낮아졌으며, Zr과 비교해 Nb 또는 Ti의 첨가량이 많아질수록 자기터널접합의 저항이 감소하였다. 이는 ZrNbAl, ZrTiAl 삼원계 합금 박막은 비정질인 ZrAl 이원계 합금박막과는 달리 다결정체로서 불균일한 산화 절연층을 형성하여 자기저항 및 전기적 특성을 감소시키는 역할을 하기 때문이다. 그러나 삼원계 산화 절연층의 경우 이원계 경우보다 낮은 터널 저항을 특성을 나타내었으며 이는 Nb 또는 Ti이 벤드갭 내에 국부적 에너지 준위를 만들어 에너지 장벽이 감소된 효과로 추측된다.

• 한국세라믹학회지
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• 제40권1호
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• pp.11-17
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• 2003

Ni-Mn 산화물 NTC 서미스터의 미세구조와 전기적 특성에 미치는 Zr $O_2$ 첨가의 효과를 연구하였다. Zr $O_2$를 포함하는 Ni-Mn-Zr 산화물 소결체의 주요 상은 입방정 스피넬 구조를 가지는 NiO-Mn$_3$ $O_4$-Zr $O_2$의 고용체와 정방정 결정구조를 가지는 Zr $O_2$ 상이였다. Zr $O_2$의 첨가량이 증가함에 따라 Ni-Mn-Zr산화물의 고용체를 형성하지 못하고 생성된 Zr $O_2$의 양이 증가하였다. NiO-Mn$_3$ $O_4$-Zr $O_2$ NTC 서미스터에 있어서 절대온도 역수(l/T)에 대한 로그 비저항(log $ho$)은 직선적인 관계가 있었고, 비저항, B$_{140}$320/정수 및 활성화 에너지는 Zr $O_2$ 함량이 증가함에 따라 크게 증가하였다.

• 한국재료학회지
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• 제14권6호
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• pp.394-398
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• 2004

A Ti47Al1.7W-3.7Zr alloy was oxidized between $900^{\circ}C$ and $1050^{\circ}C$, and the oxide scales formed were studied. The oxide scales consisted primarily of an outer$TiO_2$ layer, an intermediate $Al_2$$O_3$-rich layer, and an inner mixed ($TiO _2$ + $Al_2$$O_3$) layer. Besides $TiO_2$ and $Al_2$$O_3$, oxidation led to the formation of some $Ti_2$AlN and TiN. Both W and Zr were preferentially segregated below the intermediate $Al_2$$O_3$-rich layer. Tungsten in the oxide scale was present as $WO_3$ and ${Ti}_{x}$$W_{1-x}$, whereas zirconium as monoclic-$ZrO_2$ and tetragonal-$ZrO_2$.

• 분석과학
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• 제13권6호
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• pp.712-721
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• 2000

$LiF-BeF_2-ZrF_4$(63-30-7 mol%) 용융염은 상온에서 증류수 1ml당 최고 0.02g까지 용해율 99.9%로 용해되었다. 그리고 $ZrF_4$를 열가수분해시켜 제조된 $ZrO_2$ 산화물을 포함하는 $LiF-BeF_2-ZrF_4$ 용융염에서 $ZrO_2$ 산화물을 증류수로 침출시켜 회수하였다. 회수된 $ZrO_2$ 산화물의 결정모양은 손상되지 않았다.

• 한국재료학회지
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• 제18권11호
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• pp.597-603
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• 2008

Oxide effects experiments on massive hydriding reactions of Zr alloy with hydrogen gas were carried out at $400^{\circ}C$ under 1 atm in a $H_2$ environment with a thermo-gravimetric apparatus (TGA). Experimental results for oxide effects on massive hydriding kinetics show that incubation time is not proportional to oxide thickness. The results also show that the massive hydriding kinetics of pre-filmed Zr alloys follows linear kinetic law and that the hydriding rates are similar to that of oxide-free Zr alloys once massive hydriding is initiated. Unlikely microstructure of the oxide during incubation time, physical defects such as micro-cracks and pores were observed in the oxide after incubation time. Therefore, it seems that the massive hydriding of Zr alloys can be ascribed to short circuit paths and mechanical or physical defects, such as micro-cracks and pores in the oxide, rather than to hydrogen diffusion through the oxide resulting from the increase of oxygen vacancies in the hypo-stoichiometric oxide.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.208-212
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• 2004

In this paper, the characteristics of co-sputtered Ru-Zr metal alloy as gate electrode of MOS capacitors have been investigated. The atomic compositions of alloy were varied by using the combinations of relative sputtering power of Ru and .Zr. C-V and I-Vcharacteristics of MOS capacitors were measured to find the effective oxide thickness and work function. The alloy made of about 50% of Ru and 50% of Zr exhibited an adequate work function for nMOS. C-V and I-V measurements after 600 and $700^{\circ}C$ rapid thermal annealing were performed to prove the thermal and chemical stability of the Ru-Zr alloy film. Negligible changes in the accumulated capacitance and work function before and after annealing were observed. Sheet resistance of Ru-Zr alloy was lower than that of poly-silicon. It can be concluded that the Ru-Zr alloy can be a possible substitute for the poly-silicon used as a gate of nMOS.

• Bulletin of the Korean Chemical Society
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• 제17권3호
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• pp.274-278
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• 1996

Vanadium oxide-zirconia catalysts were prepared by dry impregnation of powdered Zr(OH)4 with aqueous solution of NH4VO3. The characterization of prepared catalysts was performed using 51V solid state NMR, XRD, and DSC. The addition of vanadium oxide up to 9 mol% to zirconia shifted the phase transitions of ZrO2 from amorphous to tetragonal toward higher temperatures due to the interaction between vanadium oxide and zirconia. On the basis of results of XRD and DSC, it is concluded that the content of V2O5 monolayer covering most of the available zirconia was 9 mol%. The crystalline V2O5 was observed only with the samples containing V2O5 content exceeding the formation of complete monolayer (9 mol%) on the surface of ZrO2.

• 한국수소및신에너지학회논문집
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• 제19권3호
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• pp.189-198
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• 2008

Cooperative effects of Rh, Ce and Zr added to Fe-based oxide mediums were investigated using temperature programmed redox reaction (TPR/TPO) and isothermal redox reaction in the view point of hydrogen storage and release. As the results of TPR/TPO, Rh was a sale additive to remarkably promote the redox reaction on the medium as evidenced by the lower highest peak temperature, even though its addition was to accelerate deactivation of the mediums due to sintering. On the other hand, Ce and Zr additives played an important role to suppress deactivation of the medium in repeated redox cycles. The medium co-added by Rh, Ce and Zr (FRCZ) exhibited synergistic performance in the repeated isothermal redox reaction, and the amount of hydrogen produced in the water splitting step at 623 K was highly maintained at ca. $17\;mmol{\cdot}g^{-1}-Fe$ during three repeated redox cycles.

• Bulletin of the Korean Chemical Society
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• 제24권3호
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• pp.311-317
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• 2003

Vanadium oxides supported on zirconia and modified with MoO₃were prepared by adding Zr(OH)₄powder into a mixed aqueous solution of ammonium metavanadate and ammonium molybdate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using FTIR, Raman spectroscopy and solid-state $^{51}V$ NMR. In the case of a calcination temperature of 773 K, for samples containing low loading of $V_2O_5$, below 15 wt %, vanadium oxide was in a highly dispersed state, while for samples containing high loading of $V_2O_5$, equal to or above 15 wt %, vanadium oxide was well crystallized because the $V_2O_5$ loading exceeded the formation of a monolayer on the surface of $ZrO_2$. The $ZrV_2O_7$ compound was formed through the reaction of $V_2O_5\;and\;ZrO_2$ at 873 K and the compound decomposed into $V_2O_5\;and\;ZrO_2$ at 1073 K, which were confirmed by FTIR spectroscopy and solid-state $^{51}V$ NMR. IR spectroscopic studies of ammonia adsorbed on $V_2O_5-MoO_3/ZrO_2$ showed the presence of both Lewis and Bronsted acids.