• Proceedings of the KWS Conference
• /
• 2004.05a
• /
• pp.223-225
• /
• 2004

Based on the principle of complementary energy an analytical method is developed for determining thermal stress distribution in an thermal barrier coating. This method gives the stress distributions which satisfy the stress-free boundary conditions at the edge. Numerical examples are given in order to verify the method and to investigate the thickness effects of the ZrO$_2$-8wt%Y$_2$O$_3$ top coat on the integrity of thermal barrier coating consisted of IN738LC substrate and MCrAlY bond coat.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.31 no.1
• /
• pp.32-36
• /
• 2021

This study was investigated in carbon diffusion behavior of laser-carburized TiZrN coating layer and the changes of mechanical properties. The carbon paste was deposited on TiZrN coatings, and the laser was irradiated to carburize into the coatings. The XRD peak corresponding to the (111) plane shifted to a lower angle after the carburization, showing the lattice expansion by doped carbon. The decreased grain size implied the compression by the grain boundary diffusion of carbon. The XPS spectra for the bonding states of carbon was analyzed that carbon was substitute to nitrogen atoms in TiZrN, as carbide, through the thermal energy of laser. In addition, the combination of sp2 and sp3 hybridized bonds represented the formation of an amorphous carbon. The cross-sectional TEM image and the inverse FFT of the TiZrN coating after carburizing were observed as the wavy shape, confirming the amorphous phase located in grain boundaries. After the carburization, the hardness increased from 34.57 GPa to 38.24 GPa, and the friction coefficient decreased by 83 %. In particular, the ratio of hardness and elastic modulus (H/E) which is used as an index of the elastic recovery, increased from 0.11 to 0.15 and the wear rate improved by 65 %.

• Journal of the Korean Ceramic Society
• /
• v.41 no.4
• /
• pp.328-333
• /
• 2004

Hydroxyapatite (HAp) and HAp-Ag composite layers were coated on ZrO$_2$and Si wafer substrates by RF magnetron sputtering technique. The thickness of coating layers was in the range of 0.7∼1.0$\mu\textrm{m}$ and its roughness was 3∼4nm. The heat treated HAp coating layers were composed with nano-sized crystallines. However, the HAp-Ag composite layers showed the mixed structure with crystalline and amorphous phases. The Ca/P ratio of the as-received HAp coating layer was 1.9, but, the value was decreased as the Ag content with increased. Also, the Vickers hardness of HAp coating layer decreased as the Ag content increase.

• Journal of the Korean Ceramic Society
• /
• v.41 no.3
• /
• pp.259-265
• /
• 2004

The microstructure of nano-sized hydroxyapatite (HAp) powders coating layer on ZrO$_2$ substrate was investigated, which was formed by plasma spray process. The nano-sized HAp powders were successfully synthesized by precipitation of Ca(NO$_3$)$_2$$.$4H$_2$O and (NH$_4$)$_2$HPO$_4$ solution. The HAp coating layer with thickness of 150∼250 $\mu\textrm{m}$ was free from the cracks at interfaces between the coating and ZrO$_2$ substrate. In the plasma sprayed HAp coating layer, the undesirable phases were not found, while in the HAp coating layer heat-treated at 800$^{\circ}C$, TTCP, and ${\beta}$-TCP phase were detected as well as HAp phase. However, at 900$^{\circ}C$, they were completely disappeared. At 1100$^{\circ}C$, XRD analysis revealed that the coating layer was composed of the highly crystallized HAp.

• Journal of the Korean Ceramic Society
• /
• v.35 no.9
• /
• pp.969-973
• /
• 1998

Pb(Zr, Ti)O3 (PZT) (Zr:Ti= 52: 48) thin films were prepared on MgO(100) substrates by dipping-py-rolysis process using metal naphthenates as starting materials. Thin films were fabricated by spin coating technique and the precursor films were prefired at 20$0^{\circ}C$ in air for 0.5, 1, 2, 3, and 24 h followed by final heat treatment at 75$0^{\circ}C$ for 30min. Film prefired for 24 h lost orientational properties and pole figure analysis showed the lost of the epitaxial relationship between the films and substrate while highly a/c-axis oriented thin films were obtained for the samples prefired for 1, 2, and 3h.

• Journal of the Korean institute of surface engineering
• /
• v.57 no.4
• /
• pp.348-354
• /
• 2024

Nanocrystalline zirconium nitride (ZrN) coatings were deposited by mid-frequency direct current sputtering (mfMS) with varying pulsed plasma parameters such as pulse frequency and duty cycle to understand the effect of pulsed plasma on the microstructure, residual stress and mechanical properties. The results show that, with the increasing pulse frequency and decreasing duty cycle, the coating morphology changed from a porous columnar to a dense structure, with finer grains. Mid-frequency magnetron sputtered ZrN coatings with pulse frequency of 30 kHz showed the highest both nanoindentation hardness of 16.3 GPa, and elastic modulus of 214.4 GPa. In addition, Effect of pulse frequency on a residual stress and average crystal grain sizes was also investigated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.312.2-312.2
• /
• 2016

본 연구에서는 $HfO_2$와 $ZrO_2$의 구조적 차이를 통한 Dielectric layer의 특성 변화에 대한 분석을 진행하였다. $HfO_2$와 $ZrO_2$ layer는 용액 공정을 통해 만들고, 용액의 농도는 0.2 M로 제작하여 Spin Coating으로 소자를 제작하였다. 각 소자들의 구조적인 차이를 위해 $HfO_2$/$HfO_2$, $ZrO_2$/$HfO_2$, $HfO_2$/$ZrO_2$, $ZrO_2$/$ZrO_2$ 층 순서로 제작되었다. 각 소자들의 Capacitance 값은 245.72, 259.81, 294.23, $312.12nF/cm^2$으로 측정 되었고, Leakage current 값은 1.01, 1.79, 0.09, $0.0910-1A/cm^2$으로 다소 높은 값으로 확인되었다. 또한 dielectric constant, k 값이 16.6, 17.6, 19.9, 21.2로 각각의 측정값들 모두 substrate쪽의 dielectric layer에 따라 비슷한 특성을 갖게 되는 것을 확인했다. 이를 통해 Electrode 쪽의 layer보다 Substrate 쪽의 layer의 영향이 더 큰 것을 알 수 있다.

• Journal of the Korean Ceramic Society
• /
• v.40 no.5
• /
• pp.501-505
• /
• 2003

SrZrO$_3$ resistive oxides on Ag tapes were prepared by the sol-gel and dip coating method to investigate the effect of PVP content and drying condition on microstructure of the films. Although the film thickness increased with the addition of PVP, the amount of PVP and heat treatment were not effective to reduction of formation of microcracks at the films. However, lower drying temperature and longer drying time were beneficial to control the microcracks of the SrZrO$_3$ films, indicating that the microcracking of the films was governed primarily by the drying condition.

• Korean Journal of Materials Research
• /
• v.29 no.12
• /
• pp.757-763
• /
• 2019

A stacked high-voltage (900 V) Al electrolytic capacitor made with ZrO₂ coated anode foils, which has not been studied so far, is realized and the effects of Zr-Al-O composite layer on the electric properties are discussed. Etched Al foils coated with ZrO₂ sol are anodized in 2-methyl-1,3-propanediol (MPD)-boric acid electrolyte. The anodized Al foils are assembled with stacked structure to prepare the capacitor. The capacitance and dissipation factor of the capacitor with ZrO₂ coated anode foils increase by 41 % and decrease by 50 %, respectively, in comparison with those of Al anode foils. Zr-Al-O composite dielectric layer is formed between separate crystalline ZrO₂ with high dielectric constant and amorphous Al₂O₃ with high ionic resistivity. This work suggests that the formation of a composite layer by coating valve metal oxide on etched Al foil surface and anodizing it in MPD-boric acid electrolyte is a promising approach for high voltage and volume efficiency of capacitors.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.9
• /
• pp.1463-1466
• /
• 2007

Single phases of multi-component oxides films, ZrTiO4 and Ta2Zr6O17, could be synthesized by using the combinatorial approach through surface sol-gel route, coating the appropriate mole ratio of 100 mM zirconium butoxide, tantalum butoxide and titanium butoxide precursors on Pt/Ti/SiO2/Si (100) substrate, following pyrolysis at 450 oC, and annealing them at 770 oC. Both the films and bulks of ZrTiO4 and Ta2Zr6O17 showed very stable dielectric properties in temperature range, ?140 to 60 oC, and frequency range, 100 Hz to 1 MHz, promising their applications in wide range of temperatures and frequencies. The dielectric constants of the films were lower and a little more dependent on frequency than those of the bulks. The reduction of dielectric property in the film was mainly due to the interfacial effects that worked as series and parallel-connected capacitances toward the substantial film capacitance.