• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.15-20
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• 1986

Formation of powders and electromechanical coupling factor of $Pb(Mn_{1/3} Sb_{2/3})_{0.08} Ti_{0.495}Zr_{0.425}O_3$ by hydro-thermal synthesis are described. The hydrothermal reactions each were accomplished at 12$0^{\circ}C$~25$0^{\circ}C$ for 5hours and sintering was accomplished at 1, .20$0^{\circ}C$ for 1hours. The PZT powders by hydrothermal synthesis were formed above 16$0^{\circ}C$ and the forms were cubic types. The ratio of grain size of sintered sample to powder was slowly decreased with the rising of hydrothermal reactino temperature but decreased rapidly above 22$0^{\circ}C$ Sintering density was decreased with the rising of hydrothermal reaction temperature above 16$0^{\circ}C$ but dielectric constant was increased. Electromechanical coupling factor $K_P$ was almost constant at 16$0^{\circ}C$~24$0^{\circ}C$ range and the value of $K_P$ was about 0.43-0.45.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.117-119
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• 2003

The $Pb(Zr_{0.3}Ti_{0.7)O_3/Pb(Zr_{0.7}/Ti_{0.3})O_3$ [PZT(30/70)/(70/30)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. Sputter gas ratio(AR/O2) was changed form 90/10 to 50/50. The structural properties and electrical properties of the PZT(30/70)/ (70/30) heterolayered thin films were studied. The relative dielectric constant and dielectric loss at 100Hz of the PZT(30/70)/PZT(70/30) heterolayered thin films with Ar/$O_2$(80/20) ratio were about 982 and 0.036, respectively.

• Journal of the Korean Chemical Society
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• v.27 no.4
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• pp.273-278
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• 1983

With the synthetic standards, valuable metals $(Ta_2O_5, Nb_2O_5, TiO_2, SnO_2$, and $ZrO_2$) in the tin slags have been determined by the x-ray fluorescence spectrometry. The powder sample and the standards are homogeneously mixed with anhydrous $Li_2B_4O_7$ and La_2O_3$ in weight ratio of 15 : 42 : 3 respectively. The mixed material is fused at $1,150^{\circ}C$ for 30 minutes to be changed into the glass bead. The bead is ground to (-) 325 mesh size and pelletized. The analytical results obtained in this work are consistent with the data obtained by other common methods within allowable error range. The standard deviation for $Ta_2O_5$ in PTS-H sample is 0.12 % at level of 3.40 % content.

• Journal of the Korean Ceramic Society
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• v.13 no.1
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• pp.30-34
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• 1976

In general the chemical composition of glass ceramics in Li2O-Al2O3-SiO2 system is similar to the composition of $\beta$-spodumene (Li2O-Al2O3-4SiO2). With the object to manufacture the glass ceramics which can be produced in the domestic pot the composition of glass was so settled at 1.0 Li2O.0.9Al2O3.6.0SiO2 in order to reduce the contents of Li2O, to prevent the corrosion of the pot and to decrease the cost of raw materials. 0.2 mole and 0.1 mole of the mixture of TiO2 and ZrO2 as nucleants were added to the basic composition of 1.0 Li2O-0.9Al2O3-6.0SiO2. Each sample was divided into two kinds with a TiO2/ZrO2 ratio of 2 to 1 and the other with a TiO2/ZrO2 ratio fo 1 to 1. Thermal expansion coefficient, the most important property of glass ceramics, was tested. The softening point and the melting point of the samples were observed by the use of a heating microscope. The results obtained were as follows. The manufacturing of glass ceramics seems to be possible in the industrial plant using the domestic pot. 1) The composition of the glass which can be melted in the domestic pot process was near 1.0 Li2O.0.9Al2O3.6.0SiO2. 2) The temperature range of crystal creation and crystal growth was between 850-94$0^{\circ}C$, and 5 hours holding the samples at the temperature range was enough to crystallize them. The major crystal was $\beta$-spdumene and there existed petalite partialy. 3) The thermal expansion coefficient fo the crystallized glass was negative. 4) The deforming point of the crystallized glass was 1435$^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.13-17
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• 2005

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.153-156
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their dielectric properties were investigated with variation of composition ratio, doped ZrO$_2$ (0.5, 1.0, 1.5, 2.0, 3.0 wt%) and sintered at 145$0^{\circ}C$. The dielectric constant and loss of the x=0.10 specimen applied field were 19.86 and 0.302 % at 0 V/cm, and 25.937 and 0.339 % at 300 V/cm, respectively. Dielectric constant were increased with increased applied field and decreased with increased frequency, and dielectric loss were within 0.1% at applied 800 MHz, respectively. all specimens showed fairly good applied field. Although, dielectric constant and loss of all specimen showed to tend of nearly the same. same.

• Journal of Integrative Natural Science
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• v.7 no.3
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• pp.183-187
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• 2014

Lead zirconate titanate (PZT) is significant material in electrical and optical devices for their ferroelectric, piezoelectric and dielectric properties. In this research, PZT films were fabricated by reactive RF co-sputtering method using Pb, Zr, and Ti targets. From XPS study, lead, zirconium, and titanium are successfully deposited on Si(100) substrate. Thickness of PZT films was measured with a surface profiler and the thickness was decreased as the oxygen gas ratio increased in the sputter gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.20-23
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• 1991

In this study, 0.05Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$+ 0.95Pb(Zr/Ti)O$_3$+x[wt%]Cr$_2$O$_3$piezoelectric ceramics were fabricated by Hot-press method, and its structural, dielectrical, piezoelectrical properties, temperature stability and aging characteristics were investigated. Among the MPB and tetragonal compositions, the specimens with 0.2, 0.3 and 0.4 [wt%] Cr$_2$O$_3$ additive amount had the poisson ratio more than 1/3. At tetragonal phase, the aging was small, and the temperature stability was improved by Cr addition. The specimen most suitable to the HF device substrate was the one with the composition of 47/53 (Zr/Ti) an 0.4 [wt%] Cr$_2$O$_3$addition.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.225-227
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• 1993

Pb(Zr, Ti)$O_3$ ferroelectric thin layers were deposited onto Pt/$SiO_2$/Si substrates by Sol-Gel processing and annealed by RTA at $600^{\circ}C$ for $20{\sim}30\;sec$. microstructure of the films was examined by XRD and SEM analysis. Electrical properties of PZT thin films with different Zr/Ti ratio yield $P_r$ ranging $10{\sim}21{\mu}C/cm^2$, $E_c$, ranging $37.5{\sim}137.5\;kV/cm$, switching times faster than 180nsec, and leakage current about $20{\mu}A/cm^2$. The film was endured about $10^{10}$ fatigue cycles.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.369-375
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• 1994

In this study, ferroelectric thin films of PZT with different Zr/Ti ratio were prepared by sol-get processing and annealed by rapid thermal annealing at >$500^{\circ}C$>$-700^{\circ}C$ for 10 sec. -1 min. Structures of the annealed films were examined by X-ray diffraction and SEM. Thin films of PZT with perovskite structure have been obtained by annealing at >$600^{\circ}C$ or above and for 20 seconds or longer. Maximum remnant polarization of 10.24.mu.C/cm$^{2}$ and minimum coercive field of 20.06 kV/cm were obtained from the 56/44 and 65/35 Zr/Ti composition films, respectively. Dielectric constant, .epsilon.$_{r}$ of 500-1300 and dielectric loss, tan .delta., of 0.01-0.035 were obtained from the films.s.