• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.245-248
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• 1991

Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. In this paper, we made the thick-film ZnO gas sensors with $PdCl_2$ as a catalyst and investigated the sensitivity to CO gas. In the thick-film Zno sensor, the highest sensitivity was shown in the sensor with 1wt.% of $PdCl_2$ which was sintered for 1 hour at $700^{\circ}C$ and operated at $300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.61-62
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• 2009

This paper describes the characteristics of lightning impulse current of ZnO block for transmission line arrester with external gap. The ageing parameters of lightning arresters ate impulse current, moisture ingress, temperature ageing and so on. Especially it is important to estimate the change of electrical characteristics by impulse current. Total energy applied to the ZnO arrester each time is $4/10{\mu}s$, 30kA and $2/20{\mu}s$, 10kA impulse current. Before and After the test, the residual voltage variation of varistors passed was below 5%. According to the test, it is thought that the ZnO arrester shows good stability with impulse current test.

• Proceedings of the KIEE Conference
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• 2004.11d
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• pp.40-42
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• 2004

Electronic equipments made from electrical circuits with small-sized semiconductor are very weak against lightning surge. So, electronic equipments is protected by SPD(surge protective devices) such as Zno varistor. The SPD protect electronic circuit in electronic equipments and AC power lines from the lightning surge. Therefore to achieve effective method of surge protection, there are needs for correlation between lightning surge protective effect and installation method of surge protective device. Therefore this paper describes as a result of experiments for correlation between lightning surge protective effect and installation method of surge protective device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.93-94
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• 2008

양이온 금속원소(Al)와 음이온 할로겐 원소(F) 및 수소를 다중 도핑한 ZnO 박막을 rf 마그네트론 스퍼터를 이용하여 코닝 글라스에 증착하여 도핑량과 진공중에서의 열처리에 따른 전기적 및 광학적 특성에 대하여 고찰하였다. 양이온이 할로겐 및 수소와 동시에 도핑될 시, 금속이온의 농도가 낮은 것이 TCO 박막의 전기적 특성 향상에 유리하게 작용하는 것으로 나타났으며, 동일한 F 함량에 대하여는 수소가 증가할수록 박막의 전기적 특성이 향상되는 것으로 나타났다. 그러나 열처리에 따른 F와 H의 거동은 반대로 나타나서, 최적의 상대적인 도핑 조성이 있음을 시사하였고, 36.2 $cm^2$/Vs의 높은 흘 이동도와 $2.9\times10^{-4}{\Omega}cm$의 낮은 비저항을 가지는 ZnO계 박막의 제조가 가능하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.5-5
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• 2008

We design and demonstrate the controled doping into ZnO nanowires (NWs) adopting self-contrived hot-walled pulsed laser deposition (HW-PLD). Optimized synthesis conditions with the diversified dopants guarantee the excellent crystalinity and morphology as well as electrical properties of the NWs. Proprietary target rotating system in the HW-PLD fuels the controlled formation and doping of the NWs. Prepared NWs sensitive to the environment are systematically characterized, and the doping mechanism is discussed.

• Clean Technology
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• v.9 no.4
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• pp.189-196
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• 2003

ZnO-CuO mixed sorbents for desulfurization in hot gas cleaning process Were prepared and investigation on their characteristics was performed in this study. The rate of sulfidation increased as the amount of copper oxide in the composite sorbent was raised. TPO experiments were carried out to investigate the characteristics of the regeneration of the sorbents with severa1 different ratios of Zno to CuO. Copper sulfate was formed at temperatures above $400^{\circ}C$, while it was decomposed by pyrolysis above $700^{\circ}C$. $SO_2$ slippage due to $CuSO_4$ was observed in the sorbent regenerated at temperatures above $600^{\circ}C$. However, it was not observed when regenerated above $700^{\circ}C$. It was confirmed in the ZnO-CuO mixed sorbent system that CuO suppressed the vaporization of ZnO on the one hand and Zno minimized the $SO_2$ slippage due to CuO on the other hand.

• Nuclear Engineering and Technology
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• v.52 no.9
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• pp.2078-2084
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• 2020

Magnesium oxide (MgO) and Zinc oxide (ZnO) nanoparticles (NPs) have been successfully synthesized by solid-solid reaction method. The structural properties of ZnO and MgO NPs were studied using X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results indicated a formation of pure MgO and ZnO NPs. The mean diameter values of the agglomerated particles were around to be 70 and 50 nm for MgO and ZnO NPs, respectively using SEM analysis. Further, a wide-range of nuclear radiation shielding investigation for gamma-ray and fast neutrons have been studied for Magnesium oxide (MgO) and Zinc oxide (ZnO) samples. FLUKA and Microshield codes have been employed for the determination of mass attenuation coefficients (μ_m) and transmission factors (TF) of Magnesium oxide (MgO) and Zinc oxide (ZnO) samples. The calculated values for mass attenuation coefficients (μ_m) were utilized to determine other vital shielding properties against gamma-ray radiation. Moreover, the results showed that Zinc oxide (ZnO) nanoparticles with the lowest diameter value as 50 nm had a satisfactory capacity in nuclear radiation shielding.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.44-44
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO channel layers(ZnO TFTs) having different channel thicknesses. The ZnO film were deposited as active channel layers on $Si_3N_4/Ti/SiO_2p$-Si substrates by rf magnetron sputtering at $100\;^{\circ}C$ without additional annealing. Also the Zno thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film were deposited as gate insulator by PE-CVD at $15\;^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.248-248
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• 2009

Recently, the control of size, morphology and dimensionality in inorganic materials has been rapidly developed into a promising field in materials chemistry. 3D nanostructured flower-like ZnO architecture with different size and shapes have been simply synthesized via a hydrothermal process, using zinc acetate and ammonium hydroxide as reactants.[1] In this study, the Zno thin-films were deposited by RF magnetron sputtering in other to get high adhesion and uniformity of 3D nanostructured flower-like ZnO architecture on a $SiO_2$ substrate. The XRD patterns identified that the obtained the nanocrystallized ZnO architecture exhibited a wurtzite structure. SEM images illustrated that the flower-like ZnO bundles consisted of flower-like or chestnut bur, which were characterized by polycrystalline and [0001] preferential orientation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.275-279
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• 1998

The influence of $WO_3$ (0.5-4.0mol%) on the microstructural and electrical properties of ZnO varistors was investigated. The major part of a tungsten segregated to the nodal point. SEM, EDAX, and XRD analysis revealed that three phase, such as W-rich phase, Bi-rich phase, and spinel phase, coexist at the nodal point. The average grain size increased in the range of 15.5-29.9pm with increasing $WO_3$ content. This may be probably attributed to liquid phase formed by $WO_3$, $WO_3$ acted as promotion additive of grain growth. As $WO_3$ content increase, the varistor voltage greatly decreased in the range 186.82-35.87V/mm due to the increase of grain growth. The barrier height decreased in the range 1.93-0.42eV with increasing $WO_3$content.