• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.321-326
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• 2002

ZnWO$_4$ nano-powders were successfully prepared by polymerized complex method using zinc nitrate and tungstic acid as starting materials. In order to investigate the thermal decomposition and crystallization process, the polymeric precursors were heat-treated at temperatures from 300 to 600$^{\circ}$C for 3 h, and the heat-treated powders were characterized by XRD and FTIR. The surface morphology of the heat-treated powders were observed using SEM and TEM. The crystallite size was measured by X-ray analysis. Crystallization of the ZnWO$_4$ powders were detected at 400$^{\circ}$C and entirely completed at a temperature of 600$^{\circ}$C. The particles heat-treated 400 and 500$^{\circ}$C showed primarily co-mixed morphology with spherical and silkworm-like forms, while the particles heat-treated at 600$^{\circ}$C showed more homogeneous morphology. The average crystalline size were 19.9∼24.nm showing an ordinary tendency to increase with the temperatures from 400 to 600$^{\circ}$C.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.133-137
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• 2002

$ZnWO_4$ nano-powders were successfully synthesized at low temperature by polymerized complex method using zinc acetate and tungstic acid as starting materials. The polymeric precursors were heat-treated at temperatures from 300 to $600^{\circ}C$ for 3 h. The precursors and heat-treated powders were evaluated for crystallization process, thermal decomposition, surface morphology and crystallite size. Crystallization of the $ZnWO_4$ powders were detected at $400^{\circ}C$ and entirely completed at a temperature of $600^{\circ}C$. The particles heat-treated at $400^{\circ}C$ showed primarily co-mixed morphology with spherical and silk-worm-like forms, while the particles heat-treated at $500^{\circ}C$ showed more homogeneous morphology. The average crystalline sizes were 17.62~24.71 nm showing an ordinary tendency to increase with the temperatures from 400 to $600^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.401-404
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• 1997

We prepared 0~20mo1% WO$_3$added ZnO composite ceramics in order to promote a CO gas sensitivity. Using SE,. we observed the microstructure of sample. The resistances of sample were measured by High Voltage Measure/source Unit in the temperature range of +5V~-5V. The measured 1000ppm CO sensitivities of pure ZnO were about 1~4.3, and the measured 1000ppm CO sensitivities of ZnO-WO$_3$composite ceramics were about 1~8.2. Therefore, the 1000ppm CO sensitivities of ZnO-WO$_3$composite ceramics were about 2 times larger than that of pure ZnO.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.447-456
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• 1990

ZnWO4 single crystals were grown by Czochralski method. And the orientation of grown crystals were determined by Laue back reflection, and the crystals were siliced at (100), (010), (001) face before polishing. The morphologys and distribution of etch pits on each face were observed by optical microscopy. In the present study, we understood that dislocation distributjioon rely on shape of solid-liquid interface, and secondary phase acts on the dislocation source. We also observed dislocation trace(etch pits) of (100) slip plane on (010) cleavage plane.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.197-201
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• 2010

$ZnWO_4$ nanocrystallines were prepared from polymeric complex method using microwave irradiation. The average nanocrystalline sizes were 18~25 nm showing an ordinary tendency to increase with the temperatures from 400 to $600^{\circ}C$. Bulk type single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The effect of the growth parameters, such as the rotation speed, pulling rate and diameter of the grown crystals, were examined. The hardness, thermal expansion coefficients and dielectric constants of the crystals were evaluated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.397-403
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• 2003

Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.295-300
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• 2010

Metathetic route for the $MWO_4$ (M=Zn, Co) particles is a simple method of synthesis and a viable alternative method in a short time. $MWO_4$ (M=Zn, Co) particles were synthesized using solid-state metathetic (SSM) method with microwave irradiation. The $MWO_4$ (M=Zn, Co) particles were formed completely at $600^{\circ}C$ for 3 h. The crystallization process, thermal decomposition and morphology of the $MWO_4$(M= Zn, Co) particles were evaluated. The characteristics of the SSM reaction and the formation of a high lattice energy by-product NaCl were discussed.

• Journal of the Korean Chemical Society
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• v.42 no.4
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• pp.13-482
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.275-279
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• 1998

The influence of $WO_3$ (0.5-4.0mol%) on the microstructural and electrical properties of ZnO varistors was investigated. The major part of a tungsten segregated to the nodal point. SEM, EDAX, and XRD analysis revealed that three phase, such as W-rich phase, Bi-rich phase, and spinel phase, coexist at the nodal point. The average grain size increased in the range of 15.5-29.9pm with increasing $WO_3$ content. This may be probably attributed to liquid phase formed by $WO_3$, $WO_3$ acted as promotion additive of grain growth. As $WO_3$ content increase, the varistor voltage greatly decreased in the range 186.82-35.87V/mm due to the increase of grain growth. The barrier height decreased in the range 1.93-0.42eV with increasing $WO_3$content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.855-861
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• 2006

Sinterability and microwave dielectric properties of $xZWO_{4}-(1-x)TiO_{2}$ ceramic systems with zinc-borosilicate glass and $TiO_{2}$ contents for LTCC(Low Temperature Co-fired Ceramics) were investigated. The addition of $3{\sim}10\;wt%$ ZBS glass ensured the sinterability below $900^{\circ}C$. In general, increasing ZBS glass content seemed to enhance the sinterability, but the quality factor($Qxf_{0}$) significantly decreased due to the formation of an excessive liquid and second phases. As for the addition of $TiO_{2}$, the dielectric constant(${\varepsilon}_{r}$) and temperature coefficient of resonant frequency(${\tau}_{f}$) showed to increase, while the quality factor($Qxf_{0}$) did not show an apparent change. The composition of $0.7xZnWO_{4}-0.3TiO_{2}$ ceramics sintered at $900^{\circ}C$ with 5 wt% ZBS glass demonstrated 21.6 in dielectric constant(${\varepsilon}_{r}$), 14,800 in quality factor($Qxf_{0}$), and $+5\;ppm/^{\circ}C$ in temperature coefficient of resonant frequency(${\tau}_{f}$).