• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.43-46
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• 2001

The ZnO devices using semiconductor properties, to include $MnO_2$, $Y_2O_3$ and other material, was fabricated by $Sb_2O_3$ mol ratio from 1 to 4 [mol%]. The non-linearity factor was calculated by setting current to be $1[mA/cm^2]$ and $10[mA/cm^2]$. The spinel structure was fonned by $Sb_2O_3$ addition and it was depressed the ZnO grain formation. The grain growing was controlled by spinel structure that has improved the non-linearity factors. The breakdown voltage characteristics of semiconductor devices to increase with $Sb_2O_3$ was increased in voltage-current. The non-linearity value of ZnO semiconductor devices was 45 over.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.228-228
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• 2005

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.553-555
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• 1987

In the standard system of low voltage-oriented ZnO varistor,a small amount of $Sb_2O_3$ was added to improve the nonlinear exponent and then to find the variation of breakdown characteristics, 0.1m/o-SiO and 0.1m/o-$TiO_2$, respectively,were added We considered relationship between the breakdown voltage of systems and the microstructure. We found that the system containing 0.1m/o-$Sb_2O_3$ showed very high nonlinear exponent. And we found that SiO enhanced breakdown voltage and $TiO_2$ lowered it.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.955-958
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• 2001

The structure characteristics of varistor of Zn oxide to depend on the breakdown voltage has been investigated to annealing condition by additive material of Sb$_2$O$_3$ system. The breakdown voltage that has not doping Sb$_2$O$_3$ was 235[V]. ZnO varistors was shown ohmic properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance. High voltage ZnO varistors had high breakdown voltage, but it had bad electrical stability with various surge. Sb$_2$O$_3$was increased non-linear coefficient in ZnO varistors grain boundary.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.211-211
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.216-216
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• 2005

• Korean Journal of Materials Research
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• v.32 no.12
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• pp.515-521
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• 2022

Various types of optical materials and devices used in special environments must satisfy durability and optical properties. In order to improve the durability of zinc sulfide multispectral (MS ZnS) substrates with transmission wavelengths from visible to infrared, Ge-Sb-Se-based chalcogenide glass was used as a sealing material to bond the MS ZnS substrates. Wetting tests of the Ge-Sb-Se-based chalcogenide glass were conducted to analyze flowability as a function of temperature, by considering the glass transition temperature (T_g) and softening temperature (T_s). In the wetting test, the viscous flow of the chalcogenide glass sample was analyzed according to the temperature. After placing the chalcogenide glass disk between MS ZnS substrates (20 × 30 mm), the sealing test was performed at a temperature of 485 ℃ for 60 min. Notably, it was found that the Ge-Sb-Se-based chalcogenide glass sealed the MS ZnS substrates well. After the MS ZnS substrates were sealed with chalcogenide glass, they showed a transmission of 55 % over 3~12 ㎛. The tensile strength of the sealed MS ZnS substrates with Ge-Sb-Se-based chalcogenide glass was analyzed by applying a maximum load of about 240 N, confirming its suitability as a sealing material in the far infrared range.

• Economic and Environmental Geology
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• v.26 no.2
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• pp.117-127
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• 1993

Ag-Au vein ores from the Weolyu mine, Youngdong district, contain significant germanium (up to 145g/t, average 34.9g/t), in the form of argyrodite ($Ag_8GeS_6$). Mineral chemistries of argyrodite and its associated minerals were determined by electron probe microanalysis. Twenty eight elements in thirteen ore samples were analyzed using an ICP mass spectrometer. Argyrodite occurs in the paragenetically later mineral assemblage consisting of carbonates+quartz+native silver+argentite+Ag-sulfosalts, indicating that the germanium mineralization represents the culmination of a complex mineral sequence which includes early gold and late silver deposition. The mean formula of the argyrodite is $Ag_{7.90}\;(Ge_{0.76}Sn_{0.04})S_6$, with minor amounts of Cu, Fe, Sb, As, Sn, and Zn. The Weolyu argyrodite shows systematic substitutions of Ag by Cu, and of Ge by Sb. Chemical analyses of vein ores indicate that metals were precipitated in the order of $Fe{\rightarrow}Pb$, $Zn{\rightarrow}Cu{\rightarrow}Ag$, Sb, As, Ge. Germanium has a strong geochemical affmity with As and Sb, and Cu, Pb, Zn, Mo, and Sr show weak positive correlations with Ge. Germanium deposition at Weolyu was mainly a result of cooling of hydrothermal fluids (down to $175^{\circ}C{\sim}210^{\circ}C$, due to increasing involvement of cooler meteoric waters in the epithermal system.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.2
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• pp.213-217
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• 2008

The objective of this research is to investigate the leaching characteristics of unregulated heavy metals such as Ni, Zn, Ba, Be, Sb, Se, V in specified waste. 108 waste samples which were taken from the representative facilities emitting hazardous substances, were analyzed. The rate of leaching of heavy metal was measured using an official test method. From the results, wastewater treatment sludge and dust contained much Ni, and Zn was detected in all samples. Dust and waste catalyst producted from petroleum-refining process tended to reveal V in high concentration. Ba, Be, Sb, Se showed low concentration, but require additional analyses of waste generated at different industries.