• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.304-310
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• 1998

Carbothermal reduction has been one of the important processes for the production of ceramic raw materials such as silicon carbide, silicon nitride, boron carbide, etc. The process has also been one of several trials for the recovery of ZnO from ZnO-containing waste. It usually involves two consecutive steps: the evolution of Zn vapor and its oxidation with air. In this study a ZnO-containing raw material is reduced by carbon at $1250^{\circ}C$ and the evolved Zn vapor is oxidized with air, resulting in fine powders of ZnO. computer programs, THERMO and PYROSIM developed by MINTEK, are used to simulate the process thermodynamically and the results are compared with the experimental results. It is shown that the ZnO-containing raw material can be reduced and can form fine ZnO with the yield as high as 98.7% under a proper condition. Based on these results, a process is engineered for the production of ZnO in a rotary kiln at a rate of 3 tons/day. The produced ZnO powders show properties suitable to the usual applications in ceramic industries with a purity of > 95wt% and an average particle size of ∼3${\mu}m$.

• Journal of the Korean Ceramic Society
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• v.48 no.3
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• pp.251-256
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• 2011

The luminescence properties of polycrystalline ZnO annealed in reducing ambience ($H_2/N_2$) have been studied. An effective quenching of green luminescence with enhanced UV emission from polycrystalline ZnO is observed for the reduced ZnO. The variations of the UV and green luminescence band upon reduction treatment are investigated as a function of temperature in the range between 20 and 300 K. Upon annealing treatment in reducing ambience, the optical quality of polycrystalline ZnO is improved. The UV to green intensity ratio of sintered ZnO approaches close to zero (~0.05). However, this ratio reaches more than 13 at room temperature for polycrystalline ZnO annealed at $800^{\circ}C$ in reducing ambience. Furthermore, the full width at half maximum (FWHM) of the UV band of polycrystalline ZnO is reduced compared to unannealed polycrystalline ZnO. Electron paramagnetic resonance (EPR) measurements clearly show that there is no direct correlation between the green luminescence and oxygen vacancy concentration for reduced polycrystalline ZnO.

• Bulletin of the Korean Chemical Society
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• v.23 no.8
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• pp.1135-1138
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• 2002

CuO/ZnO, CuO/SiO,sub>2, and CuO/ZrO2 catalysts were prepared for investigating the support effects on methanol dehydrogenation. It was found that the conversion of methanol was proportional to the copper surface area on Cu/ZnO cat alysts and was independent on that on Cu/ZrO2 and Cu/SiO2. The highest copper surface area was obtained with the Cu/ZrO2 (9/1). The unusual deactivation of the Cu/ZnO, which showed the highest selectivity among the catalysts tested, was observed. Pulse reaction with methanol indicated that the lattice oxygen in ZnO could be removed by forming CO2 in the catalytic reaction, supporting that the ZnO reduction was responsible for the severe deactivation of the Cu/ZnO.

• Journal of Electrochemical Science and Technology
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• v.10 no.1
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• pp.61-68
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• 2019

Well aligned $SnO_2$-doped ZnO nanorods were prepared by single step or 2-step electrochemical depositions in a mixture solution of zinc nitrate hexahydrate, ammonium hydroxide solution and 0.1 M tin chloride pentahydrate. The morphologies of electrochemically deposited $SnO_2$-doped ZnO were transformed from plain (or network) structures at low reduction potential to needles on hills at high reduction potential. Well aligned ZnO was prepared at intermediate potential ranges. Reduction reagent and a high concentration of Zn precursor were required to fabricate $SnO_2$ doped ZnO nanorods. When compared to results obtained by single step electrochemical deposition, 2-step electrochemical deposition produced a much higher density of nanorods, which was ascribed to less potential being required for nucleation of nanorods by the second-step electrochemical deposition because the surface was activated in the first-step. Mechanisms of $SnO_2$ doped ZnO nanorods prepared at single step or 2-step was described in terms of applied potential ranges and mass-/charge- limited transfer.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.458-462
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• 2007

The effect of oxygen in the synthesis of oxide nanowires by using carbothermal reduction process have been studied thermodynamically and kinetically. By using laboratory air, ZnO nanowires could be fabricated in the carbothermal reduction process and a metal oxidation process. As the processing pressure decreases, the diameter of the nanowires decreases and the oxygen vacancy increases. As the processing pressure increases, the oxygen vacancy decreases and the shape of the ZnO becomes plate-like.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.35-40
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• 2005

The oxidation of pure Sn and Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, and Sn-9Zn alloys at $150^{\circ}C$ was investigated. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. X-ray photoelectron spectroscopy (XPS) was also conducted to support the results of reduction analysis. The effect of Cu, Ag and Zn addition on surface oxidation of Sn alloys is reported. For Sn, Sn-0.7Cu and Sn-3.5Ag, SnO grew first and then the mixture of SnO and $SnO_2$ was found. $SnO_2$ grew predominantly for a long-time aging. For Zn containing Sn alloys, both ZnO and $SnO_2$ were formed. Zn promotes the formation of $SnO_2$. Sn oxide growth rate of Pb-free solder alloys was also discussed in terms of alloying elements.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1301-1304
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• 1994

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method. The effect of the Al doping with varying Al/Zn mole ratio and the post-deposition heat treatment on the electrical resistivity and optical transmittance of the prepared films have been investigated. From the experimental results, the ZnO:Al thin films with resistivity as low as $3{\times}10^{-3}{\Omega}cm$ and transmittance as high as 80% can be obtained by Al doping. Also We have found the annealing of the as-deposited ZnO film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation. However, the annealing effect of ZnO:Al thin films is smaller than ZnO films with respect to reduction in resistivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.173-173
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• 2003

Nanowire와 nanorod 같은 1차원의 반도체 재료는 디멘젼과 크기와 물리적 특성과의 관계 등을 연구하는데 중요한 역할을 하며 laser ablation, arc discharge, chemical vapor depostion, vapor phase transport Process와 solution등의 방법으로 성공적으로 합성되었다. ZnO 는 3.37eV의 넓은 밴드갭과 다른 넓은 밴드갭 재료에 비해 높은 exciton bindng energy (60meV)를 가지며 UV LED, laser diode에 적용하기 유리하고 최근 디스플레나 나노 광전소자로서의 가능성 이 대두되면서 최근 이에 관한 연구가 증가하고 있다. 본 연구에서는 열적탄소환원법(carbothermal reduction process)으로 ZnO와 graphite 분말을 1:1 중량비로 혼합한 분말을 90$0^{\circ}C$, 100$0^{\circ}C$에서 air 분위기에서 20분간 반응 후 로 내에서 냉각 하였다. 직경 이 50nm-1000nm, 길이가 수 미크론인 내부 결함이 전혀 없는 육각형 단결정의 nanowire가 합성되었고 XRD, FE-SEM과 TEM으로 조성 및 형상, 내부구조를 분석하였다. 합성된 ZnO nanowire는 직경 이 변하는 부분에서 성장방향으로의 계단을 형성하였고 이는 layer by layer 방법으로 nanowire가 성장한다는 것을 나타낸다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.241-246
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• 2016

ZnO thin films have wide application areas due to its versatile properties as transparent conductors, wide-bandgap n-type semiconductors, gas sensor materials, and etc. We have performed a systematic investigation on ultraviolet-assisted CVD (chemical vapor deposition) method. Ultraviolet irradiation during the deposition of ZnO causes chemical reduction on the growing surface; which results in the reduction of the deposition rate, increase in the surface roughness, and decrease of the electrical resistivity. These effects produce larger characteristic variation with various deposition conditions in terms of surface morphology and optical/electrical properties compared to normal CVD deposited ZnO thin films. This versatile controllability of ultraviolet-assisted CVD can provide a larger processing options in the fabrication of nano-structured materials and flexible device applications.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.726-729
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• 2000

The entitled report revealed that ZnO phosphor samples treated at different temperatures under a given reduction atmosphere show the radiation brightness increase with increase of temperature up to about 900$^{\circ}C$ but become decreasing beyond the temperature. The brightness deterioration with curing temperature at higher temperatures was explained by the decrease of excess zinc ions resulted from their evaporation. The comments will open possibility for different discussions on the experimental result by introducing numerical relationships between the concentration of the native defects and the curing condition.