• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 춘계학술발표대회 및 제14회 신소재 심포지엄
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• pp.38.2-38.2
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.318.1-318.1
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• 2014

Metal nano-crystals have been received much attentions owing to their excellent catalytic property and surface plasmon effect. In the last decade, many studies on synthesizing well-dispersive nanoparticles and on understanding their distinct physical properties have been performed. There were tremendous reports revealing the electrochemical activities and enhancement of surface plasmonic effect were dependent mainly on the size, shape, and composition. So far, most fabrication methods have been based on vacuum based deposition techniques, such as chemical vapor deposition and electron-beam evaporation, and then annealed them to transform into the nanoparticles. Recently, there were several reports regarding to the photoinduced nano-crystal synthesis as an effective way to produce the metal nanoparticles. In this study, we report synchrotron x-ray mediated synthesis of Au nanoparticles on ZnO nanowires. ZnO nanowires were fabricated by hydrothermal method, and then they were dip into a solution having Au clusters. Detailed structural evolution of Au nanoparticles was investigated using scanning electron microscopy and photoluminescence measurements. The results on formation of well-dispersive Au nanoparticles on ZnO nanowires will be presented.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.597-597
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• 2012

A simple solution-based method is developed to deposit crystalline ultrathin (2 nm) nickel hydroxide on vertically grown ZnO nanowires to achieve high specific capacitance and long-term life for flexible and wearable energy storage devices. Ultrathin crystalline $Ni(OH)_2$ enables fast and reversible redox reaction to improve the specific capacitance by utilizing maximum number of active sites for the redox reaction while vertically grown ZnO nanowires on wearable textile fiber effectively transport electrolytes and shorten the ion diffusion path. Under the highly flexible state $Ni(OH)_2$ coated ZnO nanowires electrode shows a high specific capacitance of 2150 F/g (based on pristine $Ni(OH)_2$ in 1 M LiOH aqueous solution with negligible decrease in specific capacitance after 1000 cycles. The synthesized energy-storage electrodes are easy-to-assemble which can provide unprecedented design ingenuity for a variety of wearable and flexible electronic devices.

• 한국재료학회지
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• 제28권11호
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• pp.671-679
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• 2018

Finite element analyses are carried out to understand the piezoelectric behaviors of ZnO nanowires. Three different types of ZnO nanowires, with aspect ratios of 1:2. 1:31, and 1:57, are analyzed for uniaxial compression, pure bending, and buckling. Under the uniaxial compression with a strain of $1.0{\times}10^{-4}$ as the reference state, it is predicted that all three types of nanowires develop the same magnitude of the piezoelectric fields, which suggests that longer nanowires exhibit higher piezoelectric potential. However, this prediction is not in agreement with the experimental results previously reported in the literature. Such discrepancy is understood when the piezoelectric behaviors under bending and buckling are considered. When only the strain field due to bending is present in bending or buckling, the antisymmetric nature of the through-thickness stain distribution indicates that two piezoelectric fields, the same in magnitude and opposite in sign, develop along the thickness direction, which cancels each other out, resulting in a zero net piezoelectric field. Once additional strain contribution due to axial deformation is superposed on the bending, such field cancelling is compensated for due to the axial component of the piezoelectric field. Such numerical predictions seem to explain the reported experimental results while providing a guideline for the design of nanowire-based piezoelectric devices.

• 청정기술
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• 제16권4호
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• pp.292-296
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• 2010

황화납(PbS)을 감응물질로 하는 양자점 감응형 태양전지를 제작하고 효율을 측정해 보았다. 기판에 산화아연(ZnO) 나노선을 기른 후 SILAR(Successive ionic layer adsorption and reaction)법으로 PbS 양자점을 합성하고 이를 주사전자현미경(SEM), X-선 회절(XRD)을 통해 확인하였다. SILAR를 통해서 형성된 나노이종구조는 PbS 나노입자들이 ZnO 나노선 위에 균일하게 성장한 것을 확인할 수 있었다. 본 실험에서 PbS을 이용한 양자점 감응형 태양전지의 최고 효율은 one sun에서 0.075%로 나타났으며, 이는 기존의 다른 감응 물질에 비해 비교적 낮은 효율을 나타내었다. 이러한 요인으로는 i) ZnO와 PbS의 밴드갭 배열이 Type-I 형을 이룰 수 있는 가능성, ii) 다양한 크기의 밴드갭을 가지는 PbS에 의한 전자이동 방해 효과, iii) 전해질에 의한 PbS의 안정성 저하 등의 이유를 생각해 볼 수 있으며, 이를 해결하기 위해서는 PbS의 크기분포 조절과 새로운 전해질에 대한 연구가 향후 필요할 것으로 생각된다.

• 한국세라믹학회지
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• 제46권6호
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• pp.596-601
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• 2009

Double-layered ZnO nanostructures have been synthesized by aqueous solution method on (001) plane of ZnO nanorod. A stepwise changing of aqueous solution concentration gave rise to a new nano-structured layer consisting of either multiple of nanorods or nanowires with much smaller radii than that of the ZnO nanorod on which the new layer was grown. As the first step the ZnO nanorods have been grown to have the (001) preferential orientation in the aqueous solution consisting of 0.1M zinc nitrate and 0.1 M HMT. This preferentially aligned ZnO nanorods have been regrown in either a less diluted solution of 0.01M zinc nitrate and 0.01 M HMT or a more diluted solution of 0.005M zinc nitrate and 0.01 M HMT. A new nano-layer consisting of numerous aligned nanorods or nanowires has been produced on the (001) planes of ZnO nanorods. The growth mechanism for this double layered ZnO nanostructure is ascribed to the (001) polar surface energy instability and inhibition of (001) plane growth due to the step-wise change of aqueous solution concentration; ZnO nuclei formed on the (001) plane grow preferentially in (010) plane instead of (001) plane to reduce the total surface energy. Surface area of ZnO nanostructure can be increased in orders of magnitudes by forming a new layer consisting of smaller nanorods/nanowires on (001) plane of ZnO nanorods.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.26.2-26.2
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• 2009

A simple route of externalmechanical force is presented for enhancing the electrical properties ofpolymer nanocomposite consisted of nanowires. By dispersing ZnO nanowires inpolymer solution and drop casting on substrates, nanocomposite transistorscontaining ZnO nanowires are successfully fabricated. Even though the ZnOnanowires density is properly controlled for device fabrication, as-cast devicedoesn't show any detectablecurrents, because nanowires are separated far from each other with theinsulating polymer matrix intervening between them. Compared to the devicepressed at 300 kPa, the device pressed at 600 kPa currents increased by 50times showing the linear behavior against drain voltage and exhibits promisingelectrical properties, which operates in the depletion mode with highermobility and on-current. Such an improved device performance would be realizedby the contacts improvement and the increase of the number of electrical pathinduced by external force. This approach provides a viable solution for seriouscontact resistance problem of nanocomposite materials and promises for futuremanufacturing of high-performance devices.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.148-151
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• 2013

The control of Ga doping in ZnO nanowires (NWs) by physical vapor deposition has been implemented and characterized. Various Ga-doped ZnO NWs were grown using the vapor-liquid-solid (VLS) method, with Au catalyst on c-plane sapphire substrate by hot-walled pulsed laser deposition (HW-PLD), one of the physical vapor deposition methods. The structural, optical and electrical properties of Ga-doped ZnO NWs have been systematically analyzed, by changing Ga concentration in ZnO NWs. We observed stacking faults and different crystalline directions caused by increasing Ga concentration in ZnO NWs, using SEM and HR-TEM. A $D^0X$ peak in the PL spectra of Ga doped ZnO NWs that is sharper than that of pure ZnO NWs has been clearly observed, which indicated the substitution of Ga for Zn. The electrical properties of controlled Ga-doped ZnO NWs have been measured, and show that the conductance of ZnO NWs increased up to 3 wt% Ga doping. However, the conductance of 5 wt% Ga doped ZnO NWs decreased, because the mean free path was decreased, according to the increase of carrier concentration. This control of the structural, optical and electrical properties of ZnO NWs by doping, could provide the possibility of the fabrication of various nanowire based electronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and customized nano-sensors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.5-6
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• 2005

ZnO nanowlres (NWs) were fabricated using Au as catalyst for a method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth. The target used in synthesis was pure ZnO ceramics. Two different substrates were used; (0001)-oriented sapphires and Au-coated sapphires. The Au thin film was deposited by thermal evaporation and the thickness was about 50 ${\AA}$. ZnO NWs were only formed in case of that used catalyst metal. Field effect scanning electron microscopic (FESEM) investigation showed that the average diameter of ZnO NWs was about 70 nm and the typical lengths varied from $3{\sim}4{\mu}m$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.253.1-253.1
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• 2013

RF 마그네트론 스퍼터링법으로 증착된 Al-doped ZnO 박막을 씨드층으로 하고, zinc nitrate hexahydrate, hexamethylenetetramine (HMTA), ammonium chloride (AC) 및 polyethyleneimine (PEI)를 반응용액으로 한 수열합성법으로 ZnO 나노와이어를 성장시켰다. ZnO 나노와이어의 성장 공정 중 반응 용액내에 DC 바이어스를 인가하고, DC 바이어스의 인가 유무 및 인가 DC 바이어스 전압의 크기 변화에 따라 성장시킨 ZnO 나노와이어의 특성을 비교분석하였다. 다양한 공정변수 변화에 따라 수열합성법으로 성장시킨 ZnO 나노와이어 시편들을 SEM 분석을 통해 특성분석을 수행하였다.