• Korean Journal of Materials Research
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• v.20 no.12
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• pp.636-639
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• 2010

ZnO thin films were prepared on a glass substrate by radio frequency (RF) magnetron sputtering without intentional substrate heating and then surfaces of the ZnO films were irradiated with intense electrons in vacuum condition to investigate the effect of electron bombardment on crystallization, surface roughness, morphology and hydrogen gas sensitivity. In XRD pattern, as deposited ZnO films show a higher ZnO (002) peak intensity. However, the peak intensity for ZnO (002) is decreased with increase of electron bombarding energy. Atomic force microscope images show that surface morphology is also dependent on electron bombarding energy. The surface roughness increases due to intense electron bombardment as high as 2.7 nm. The observed optical transmittance means that the films irradiated with intense electron beams at 900 eV show lower transmittance than the others due to their rough surfaces. In addition, ZnO films irradiated by the electron beam at 900 eV show higher hydrogen gas sensitivity than the films that were electron beam irradiated at 450 eV. From XRD pattern and atomic force microscope observations, it is supposed that intense electron bombardment promotes a rough surface due to the intense bombardments and increased gas sensitivity of ZnO films for hydrogen gas. These results suggest that ZnO films irradiated with intense electron beams are promising for practical high performance hydrogen gas sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.365-365
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• 2008

In this work, Ga-doped ZnO (GZO) thin films for NOx gas sensor application were deposited on low temperature co-fired ceramics (LTCC) substrates, by RF magnetron sputtering method. The LTCC substrate is one of promising materials for this application since it has many advantages (e.g., low cost production, high manufacturing yields and easy realizing 3D structure etc.). The LTCC substrates with thickness of 400 pm were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The structural properties of the fabricated GZO thin films with different thickness are analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The GZO gas sensors are tested by gas measurement system under varing operation temperature and show good performance to the NOx gas in sensitivity and response time.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.5
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• pp.222-227
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• 2018

$Zn_{1-x}Co_x$ Zeolitic Imidazolate Framework (ZIF) (x = 0~0.05) were prepared by the co-precipitation of $Zn^{2+}$ and $Co^{2+}$ using 2-methylimidazole, which were converted into pure and Co-doped ZnO nanoparticles by heat treatment at $600^{\circ}C$ for 2 h. Homogeneous Zn/Co ZIFs were achieved at x < 0.05 owing to the strong coordination of the imidazole linker to $Zn^{2+}$ and $Co^{2+}$, facilitating atomic-scale doping of Co into ZnO via annealing. By contrast, heterogeneous Zn/Co ZIFs were formed at $x{\geq}0.05$, resulting in the formation of $Co_3O_4$ second phase. To investigate the potential as high-performance gas sensors, the gas sensing characteristics of pure and Co-doped ZnO nanoparticles were evaluated. The sensor using 3 at% Co-doped ZnO exhibited an unprecedentedly high response and selectivity to trimethylamine, whereas pure ZnO nanoparticles did not. The facile, bimetallic ZIF derived synthesis of doped-metal oxide nanoparticles can be used to design high-performance gas sensors.

• Korean Journal of Materials Research
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• v.33 no.5
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• pp.195-204
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• 2023

Micro-electronic gas sensor devices were developed for the detection of carbon monoxide (CO), nitrogen oxides (NO_x), ammonia (NH₃), and formaldehyde (HCHO), as well as binary mixed-gas systems. Four gas sensing materials for different target gases, Pd-SnO₂ for CO, In₂O₃ for NO_x, Ru-WO₃ for NH₃, and SnO₂-ZnO for HCHO, were synthesized using a sol-gel method, and sensor devices were then fabricated using a micro sensor platform. The gas sensing behavior and sensor response to the gas mixture were examined for six mixed gas systems using the experimental data in MEMS gas sensor arrays in sole gases and their mixtures. The gas sensing behavior with the mixed gas system suggests that specific adsorption and selective activation of the adsorption sites might occur in gas mixtures, and allow selectivity for the adsorption of a particular gas. The careful pattern recognition of sensing data obtained by the sensor array made it possible to distinguish a gas species from a gas mixture and to measure its concentration.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.260-266
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• 2021

Synthesizing low-dimensional structures of oxide semiconductors is a promising approach to fabricate highly efficient gas sensors by means of possible enhancement in surface-to-volume ratios of their sensing materials. In this work, vertically aligned zinc oxide (ZnO) nanorods are successfully synthesized on a transparent glass substrate via seed-mediated hydrothermal synthesis method with the use of a ZnO nanoparticle seed layer, which is formed by thermally oxidizing a sputtered Zn metal film. Structural and optical characterization by x-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy reveals the successful preparation of the ZnO nanorods array of the single hexagonal wurtzite crystalline phase. From gas sensing measurements for the nitrogen dioxide (NO₂) gas, the vertically aligned ZnO nanorod array is observed to have a highly responsive sensitivity to NO₂ gas at relatively low concentrations and operating temperatures, especially showing a high maximum sensitivity to NO₂ at 250 ℃ and a low NO₂ detection limit of 5 ppm in dry air. These results along with a facile fabrication process demonstrate that the ZnO nanorods synthesized on a transparent glass substrate are very promising for low-cost and high-performance NO₂ gas sensors.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• ETRI Journal
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• v.30 no.4
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• pp.516-525
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• 2008

This paper proposes a compact, energy-efficient, and smart gas sensor platform technology for ubiquitous sensor network (USN) applications. The compact design of the platform is realized by employing silicon-on-insulator (SOI) technology. The sensing element is fully integrated with SOI CMOS circuits for signal processing and communication. Also, the micro-hotplate operates at high temperatures with extremely low power consumption, which is important for USN applications. ZnO nanowires are synthesized onto the micro-hotplate by a simple hydrothermal process and are patterned by a lift-off to form the gas sensor. The sensor was operated at $200^{\circ}C$ and showed a good response to 100 ppb $NO_2$ gas.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.78-81
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• 2015

Pure ZnO and ZnO nanowires doped with 3 wt.% Ga (‘3GZO’) were grown by pulsed laser deposition in a furnace system. The doping of Ga in ZnO nanowires was analyzed by observing the optical and chemical properties of the doped nanowires. The diameter and length of nanowires were under 200 nm and several ${\mu}m$, respectively. Changes of significant resistance were observed and the sensitivities of ZnO and 3GZO nanowires were compared. The sensitivities of ZnO and 3GZO nanowire sensors measured at 300℃ for 1 ppm of ethanol gas were 97% and 48%, respectively.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.274-282
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• 1999

The In doped ZnO(ZnO:In)thin films sensitive to $NH_3$ gas were prepared by the double layer depositions of In film by vacuum evaporation and ZnO film by rf magnetron sputtering method onto a $SiO_2$/Si wafer substrate, and subsequent heat treatment process. The structural and electrical characteristics of the ZnO:In thin films were studied as a function of heat treatment temperature by x-ray diffraction, scanning electron microscope and 4 point probing method. And the dependence of the sensitivity, the selectivity and the time response of the thin films on heat treatment temperature was investigated. The thin film heat-treated at $400^{\circ}C$ showed the highest sensitivity of 140% at an operating temperature of $300^{\circ}C$. The sensitivity towards CO, $NO_x$, gases observed in the same temperature.