• 한국결정성장학회지
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• 제18권6호
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• pp.253-257
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• 2008

본 연구에서는 자외선 영역에서 발광하는 우수한 특성의 적색 형광체를 얻기 위하여 고상 반응법으로 air 분위기에서 $1200^{\circ}C$에서 6시간 동안 열처리하여 $(Y,\;Zn)_2O_3$:$Eu^{3+}$를 Zn 이온의 농도 변화에 따라 실험하였다. $(Y,\;Zn)_2O_3$:$Eu^{3+}$를 XRD에 의해 비교 분석한 결과 주요 peak들이 JCPDS card(No. 41-1105)와 거의 일치하는 것을 확인하였다. 그러나 Zn 이온치 농도가 5 mol% 이상일 때 XRD에서 ZnO의 peak이 관찰되는 것을 확인 하였다. 이로 인하여 Zn 이온의 농도가 5 mol% 이하일 때 불순물 상 없이 $Y_2O_3$ 구조에 잘 고용되는 것을 확인하였다. $(Y,\;Zn)_2O_3$:$Eu^{3+}$의 발광 peak은 여기 흡수 영역인 ${\lambda}ex=254\;nm$를 기준으로 612 nm 영역에서 $Eu^{3+}$ 이온의 $^5D_0{\rightarrow}^7F_2$에 전형적인 에너지 천이에 의해 가장 강한 발광 peak을 나타내는 것을 확인하였으나 Zn 이온의 농도가 10 mo1% 이상일 때 갑자기 발광 peak이 현저히 감소하는 것을 확인하였고 최대의 발광 peak을 가질 때 형광체의 조성은 $(Y_{0.95},\;Zn_{0.05})_2O_3$:$Eu^{3+}_{0.075}$이였고 입자 size는 $0.4{\sim}3{\mu}m$로 확인되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.204.2-204.2
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• 2013

Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.

• 센서학회지
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• 제29권2호
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• pp.105-111
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• 2020

Interest and demand for hydrogen sensors are increasing in the field of H₂ leakage detection during storage/transport/use and detection of H₂ dissolved in transformer oil for safety issues as well as in the field of breath analysis for non-invasively diagnosing a number of disease states for a healthy life. In this study, various ZnO-based sensors were synthesized by controlling the reduction in crystallite size, decoration of Pt nanoparticles, doping of electron donating atoms, and doping of various atoms with different ionic radii. The sensing response of the various prepared ZnO-based nanoparticles and quantum dots (QDs) for 10 ppm H₂ was investigated. Among the samples, the smallest-sized (3.5 nm) In³⁺-doped ZnO QDs showed the best sensing response, which is superior to those in previously reported hydrogen sensors based on semiconducting metal oxides. The higher sensing response of In-doped ZnO QDs is attributed to the synergic effects of the increased number of oxygen vacancies, higher optical band gap, and larger specific surface area.

• Bulletin of the Korean Chemical Society
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• 제33권6호
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• pp.1993-1997
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• 2012

Mg-doped ZnO one-dimensional (1D) nanostrutures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the Mg-doped ZnO nanostructures functionalized with Pt to CO gas at $100^{\circ}C$ were examined. The diameters of the 1D nanostructures ranged from 80 to 120 nm and that the lengths were up to a few tens of micrometers. The gas sensors fabricated from multiple networked Mg-doped ZnO nanowires functionalized with Pt showed enhanced electrical response to CO gas. The responses of the nanowires were improved by approximately 70, 69, 111, and 81 times at CO concentrations of 10, 25, 50, and 100 ppm, respectively. Both the response and recovery times of the nanowire sensor for CO gas sensing were not nearly changed by Pt functionalization. It also appeared that the Mg doping concentration did not influence the sensing properties of ZnO nanowires as strongly as Pt-functionalization. In addition, the mechanism for the enhancement in the CO gas sensing properties of Mg-doped ZnO nanowires by Pt functionalization is discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1984년도 하계학술회의논문집
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• pp.195-196
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• 1984

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.854-858
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• 2010

In this study, we have investigated the effects of Cr dopant on the sintering and electrical properties of ZnO-$Sb_2O_3$ (ZS) ceramics for varistor application. Spinel phases including $\alpha-$ and $\beta$-type was formed at ZS system and $\alpha$-spinel was stabilized by Cr doping in ZS system. Densification of ZS and ZSCr system was retarded to $1000^{\circ}C$ by the formation of spinel at $800^{\circ}C$. The morphology and its distribution of spinel phases in ZS system was homogeneous but disturbed by Cr doping. In ZSCr the densification of ZnO compared with ZS system was more retarded by low concentration of Zn interstitial defects induced by Cr doping in addition to the effect of spinel phase formation. The defects in each system were identified as attractive coulombic center (ZS: 0.13 eV, ZSCr: 0.12 eV) and singly charged oxygen vacancy $V_0^{\cdot}$ (ZSCr: 0.33 eV). In all ZS and ZSCr system have week varistor behavior by the formation of double Schottky barrier at grain boundary but its stability of barrier was very sensitive to sintering temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.207-210
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• 2005

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.79-79
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• 2009

Samples of Ta-doped in $In_2O_3-ZnO-SnO_2$(IZTO) with a doping level up to 4wt% were sintered at $1600^{\circ}C$ in $O_2$. The crystal phase of the samples was identified by an X-ray diffraction experiment. apparent density and porosity with sintered temperature from $1500^{\circ}C$ to $1640^{\circ}C$ are mesured by archimedes method. For each sample, the specific resistivity was determined. samples of sintered at $1600^{\circ}C$ had the highest density and lowest porousity and The Ta 0.25-wt%-doped IZTO ceramics had the lowest resistivity.

• 마이크로전자및패키징학회지
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• 제27권1호
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• pp.31-35
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• 2020

원자층 증착법(ALD: atomic layer deposition)으로 성장된 ZnO n-type 산화물반도체를 이용하여 three terminal memristor (memtransistor) 소자를 제작하여 습도에 따른 그 특성을 관찰하였다. 40 nm 두께의 ZnO 박막을 이용하여 channel width 70 ㎛, length 5 ㎛, back gate 구조의 memtransistor 소자를 제작하여 습도에 (40%, 50%, 60%, 70%) 따른 gate tunable memristive 특성변화를 관찰하였다. 습도가 높아질수록 electron mobility와 gate controllability가 감소하여 수소도핑효과에 의한 carrier 농도가 증가하는 거동의 output curve가 관찰되었다. 60%, 70%의 습도에서 memristive 거동이 관찰되었으며 습도가 높아질수록 on/off ratio는 증가하는 반면 gate controllability가 감소하였다. 60% 습도에서 가장 우수한 특성의 gate tunable memristive 특성을 얻을 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.24-27
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• 2014

In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.