• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.756-759
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.84.2-84
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• 2000

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.307-312
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• 2018

Liquid phases in ZnO varistors cause more complex phase development and microstructure, which makes the control of electrical properties and reliability more difficult. Therefore, we have investigated 2 mol% $CaCO_3$ doped $ZnO-Co_3O_4-Cr_2O_3-La_2O_3$ (ZCCLCa) bulk ceramics as one of the compositions without liquid phase sintering additive. The results were as follows: when $CaCO_3$ is added to ZCCLCa ($644{\Omega}cm$) acting as a simple ohmic resistor, CaO does not form a secondary phase with ZnO but is mostly distributed in the grain boundary and has excellent varistor characteristics (high nonlinear coefficient ${\alpha}=78$, low leakage current of $0.06{\mu}A/cm^2$, and high insulation resistance of $1{\times}10^{11}{\Omega}cm$). The main defects $Zn_i^{{\cdot}{\cdot}}$ (AS: 0.16 eV, IS & MS: 0.20 eV) and $V_o^{\bullet}$ (AS: 0.29 eV, IS & MS: 0.37 eV) were found, and the grain boundaries had 1.1 eV with electrically single grain boundary. The resistance of each defect and grain boundary decreases exponentially with increasing the measurement temperature. However, the capacitance (0.2 nF) of the grain boundary was ~1/10 lower than that of the two defects (~3.8 nF, ~2.2 nF) and showed a tendency to decrease as the measurement temperature increased. Therefore, ZCCLCa varistors have high sintering temperature of $1,200^{\circ}C$ due to lack of liquid phase additives, but excellent varistor characteristics are exhibited, which means ZCCLCa is a good candidate for realizing chip type or disc type commercial varistor products with excellent performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.48-56
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• 1998

Pr\ulcornerO\ulcorner-based ZnO varistors were fabricated in the range of $Y_2$O$_3$additive content from 0.5 to 4.0mol%, and its microstructure and electrical properties were investigated. Yttrium was distributed nearly in the grain boundaries and the cluster phase formed at nodal point but more in cluster phase. The average grain size was decreased markedly from 34.9 to 8.6${\mu}{\textrm}{m}$ with increasing $Y_2$O$_3$additive content. It is believed that the decrease of grain size is attributed to the formation of cluster phase and the weakening of driving force for liquid sintering. As a result, $Y_2$O$_3$was acted as the inhibitor of the grain growth. With increasing $Y_2$O$_3$additive content, the varistor voltage, the activation energy, and the nonlinear exponent increased whereas the leakage current decreased, especially 4.0mol% $Y_2$O$_3$-added varistor exhibited very good I-V characteristics; nonlinear exponent 87.42 and leakage current 46.77nA. On the other hand, as $Y_2$O$_3$additive content increases, the varistor showed tendency of the salient decrease for donor concentration and the increase for barrier height. Conclusively, it is estimated that ZnO:Pr varistor compositions added more than 2.0mol% $Y_2$O$_3$are to be used to fabricate useful varistors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.87-92
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• 1989

We fabricated primary and secondary seed grains. Primary seed grains having larger grain size were obtained under the conditions that were 2.0m/o BaCO$_3$ and 10 hours sintering. The amount of primary seed grain to yield the largest secondary seed grains were choosed as 3 w/o and we fabricated the low voltage varistors which were joined the low voltage-oriented ZnO varistor system made by conventional method with the secondary seed grains. As a result, ZnO varistor showed appoximately 10V/mm of nonlinear resistance and 15-22 of nonlinear exponent.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.6
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• pp.986-991
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• 1987

To establish the basic composition of low voltage varistor and to find the role of each compont in detail, we investigated the electrical properties and the microstructures. As a result, ZnO 1.0m/oBi2O3-1.0m/oCo2kO3-0.2m/oMnO2 system was optimum for low voltage varisor. We found that Bi2o3 promotes grain growth of ZnO and that Co2O3 doped in ZnO grain lowers the nonlinear resistance and MnO2 mainly existed near the ZnO grainboundary elevates nonlinear resistance.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.466-471
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• 1987

We investgated I-V cahracteristics and relationship between microstructures and electrical properties in the specimens fabricated by seed grain method for low voltage Zn O varistor. Breaksown voltage was mainly dependent on seed grain size, and could be cntrolled to 10V/mm -15V/mm by sintering temperature and time. In non-seed grain method breakdown voltage generally agreed with final grain size, but did not always agree with it by the change of barrier phase distribution in case of the method using seed grains.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.969-974
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• 1998

The effects of $La_2O_3$on the microstructure and electrical characteristics of Pr-based ZnO varistors were investigated. The average grain size increased in the range of 21.9~56.3$\mu$ m with increasing $La_2O_3$additive content(0.0~2.0 mol%). La was, of course grain boundary, largely segregated at the nodal point. As $La_2O_3$additive content increases, threshold voltage and nonlinear coefficient decreased and leakage current increased. In particular, 2.0 mol% $La_2O_3$-added varistor exhibited low threshold voltage 17.0V/mm and nonlinear coefficient of about 6. Based on these results, this varistor can be said to be used as low-voltage varistor, if nonlinear coefficient is somewhat improved forward.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.682-683
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• 2006

Thermoelectric conversion efficiency of thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of $TiO_2$, CoO, and $Al_2O_3$ to ZnO. It was found that the interstitial $TiO_2$ in the ZnO restrains the grain growth and CoO acts onto the bond between grains. The influence of the inclusion of $TiO_2$ and CoO onto the sintering behavior also was investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.206-213
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• 2000

The microstructure and electrical properties of Pr$_{6}$/O sub 11/-Based ZnO varistors with Nd$_2$O$_3$ was doped in the range of 0.0 to 2.0 mol% were investigated. Most of the added Nd$_2$O$_3$were segregated at the nodal points and grain boundaries and were found to form the Nd-rich phase. In addition the bulk intergranular layer at the grain boundaries and nodal points was consisted of Nd-rich phase and Pr-rich phase. the average grain size was decreased in the range of 7.8 to 5.6${\mu}{\textrm}{m}$ with increasing Nd$_{2}$/O sub 3/ additive content. The nonlinearity of ZnO varistors sintered at 130$0^{\circ}C$ was much more excellent than that at 135$0^{\circ}C$ ZnO varistors doped with 1.0mol% Nd$_{2}$/O sub 3/ exhibited the best nonlinearity. which is 65.2 in the nonlinear exponent and 4.5$\mu$A in the leakage current. Consequently. it is estimated that Pr$_{6}$/O sub 11/ -based ZnO varistors doped with 1.0 mol% Nd$_{2}$/O sub 3/ are to be sufficiently used as basic composition to fabricate good varistors in the future.ure.