The Microstructure and Electrical Characteristics of Pr-Based ZnO Variators with $La_2O_3$Additives

$La_2O_3$가 첨가된 Pr계 ZnO 바리스터의 미세구조와 전기적 특성

  • 남춘우 (동의대학교 전기공학과) ;
  • 박춘현 (동의대학교 전기공학과)
  • Published : 1998.11.01

Abstract

The effects of $La_2O_3$on the microstructure and electrical characteristics of Pr-based ZnO varistors were investigated. The average grain size increased in the range of 21.9~56.3$\mu$ m with increasing $La_2O_3$additive content(0.0~2.0 mol%). La was, of course grain boundary, largely segregated at the nodal point. As $La_2O_3$additive content increases, threshold voltage and nonlinear coefficient decreased and leakage current increased. In particular, 2.0 mol% $La_2O_3$-added varistor exhibited low threshold voltage 17.0V/mm and nonlinear coefficient of about 6. Based on these results, this varistor can be said to be used as low-voltage varistor, if nonlinear coefficient is somewhat improved forward.

Keywords

References

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