• 한국세라믹학회지
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• 제38권7호
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• pp.639-642
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• 2001

전형적인 비저항-온도 특성을 갖는 BaTiO$_3$계 PTC 세라믹을 일반적인 세라믹 공정을 이용하여 제조하였고, 결정립계면에 형성된 전위장벽의 높이를 구하였다. ZnO 바리스터의 전위장벽을 구하기 위해 이용되었던 커패시턴스-전압 관계식과는 다른 새로운 관계식을 제안하였고, 기존의 비저항-온도 관계식을 다소 변경한 관계식을 이용하여 전위장벽을 구하였다. 두 관계식으로부터 구한 전위장벽의 높이는 매우 유사한 값을 보이고 있으며 타 연구자들에 의해 보고된 값과도 잘 일치하고 있다. 비저항-온도 관계식과 커패시턴스-전압 관계식을 이용하여 130-18$0^{\circ}C$ 구간에서 구한 전위장벽의 크기는 각각 0.41-0.76V와 0.36-0.80V이었다.

• Korean Chemical Engineering Research
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• 제53권3호
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• pp.357-363
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• 2015

타이어 라벨링제 도입으로 인한 친환경 타이어 개발의 요구로 타이어산업에서 사용되고 있는 기존 산화아연의 문제점 개선을 위하여 나노산화아연과 나노기공 실리카와의 복합체 합성에 대한 연구를 진행하였다. 본 연구에서는 타이어의 트레드(tread) 부분에 적용될 기존의 고무 보강재인 카본블랙을 대체하기 위한 실리카와 나노산화아연의 복합체를 합성하기 위하여, 일정량의 나노기공 실리카를 함유하고 재질 상으로는 나노기공 실리카와 산화아연을 물리적 결합을 통하여 hysteresis 손상을 줄이면서 트레드의 탄성을 증대시키기 위해 내마모성능의 향상을 목표로 실험을 진행하였다. 이를 위하여 복합체와 고무 조성물과의 컴파운딩 시 낮은 활성도와 분산안정성 저하의 문제점 개선하고자 숙성시간(Aging time)과 몰 비 그리고 반응물의 반응 순서에 따라 미치는 영향에 대해 조사하였다. 0.03몰 비의 산화아연과 숙성기간 10일의 조건의 실리카에서 가장 작은 평균입도(약 50.5 nm)와 안정적인 분산성을 보였고, 약 $649m^2/g$의 높은 비표면적을 나타내었다.

• 한국표면공학회지
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• 제52권2호
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• pp.62-71
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• 2019

Al1050 and Al7075 alloy specimens were exposed to atmospheric conditions for 24 months and analyzed by Transmission Electron Microscopy to characterize their corrosion behavior and oxide film characteristics, especially focusing on intergranular corrosion or oxidation. In general, the intergranular oxygen penetration depth of Al1050 was deeper than Al7075. Since O and Si signals were overlapped at the oxidized grain boundaries of Al1050 and Mg is not included in Al1050, it is concluded that Si segregated along the grain boundaries directly impacts on the intergranular corrosion of Al1050. Cr-Si or Mg-Si intermetallic particles were not observed along the grain boundaries of Al7050, but Mg-Si particle was barely observed in the matrix. 10-nm size Mg-Zn particles were also found all over the matrix. Mg was mainly observed along the oxidized grain boundary of Al7075, but Si was not detected due to the Mg-Si particle formation in the matrix and relatively low concentration of Si in Al7075. Therefore, it is thought that Mg plays an important role in the intergranular corrosion of Al7075 under atmospheric corrosion conditions.

• 한국재료학회지
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• 제8권3호
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• pp.256-262
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• 1998

산소이온전도체 13mol% CaO안정화 $ZrO_{2}$에 대한 $AI_{2}$$O_{3}$의 첨가효과를 살펴보기 위해 출발원료분말을 ($Zr_{0.87}$ $Ca_{0.13}$ O$1.87_{1-x}$ $AI_{2}$$O_{3}$)x,(x=0,0.01,0.02,0.03,0.05)와 같은 조성이 되도록 공침법으로 합성하고 $1400^{\circ}C$에서 소결시켜, $AI_{2}$$O_{3}$의 첨가에 따른 /grain size의 변화, $AI_{2}$$O_{3}$의 형태 및 존재위치, 소결밀도의 변화, 그리고 저항률의 변화를 살펴보았다. 그 결과, 결정립의 크기는 1mol% A $I_{2}$$O_{3}$첨가까지는 증가하였고, 2mol%첨가이상에서는 입계로 석출하기 시작한 $AI_{2}$$O_{3}$의 pinning효과에 기인되어 감소하였다. 또 1mol% $AI_{2}$$O_{3}$첨가시에 격자상수값의 급격한 감소가 보여지고, 그 이상에서는 변화가 별로 없어 13mol%CaO안정화 $ZnO_{2}$의 고용도한은 최대 1mol%임을 알 수 있었다. 전기전도도 또한 1mol% $AI_{2}$$O_{3}$첨가시에 증가됨을 나타냈다. $ZrO_{2}$에의 고용도한까지의 $AI_{2}$$O_{3}$첨가는 결정립성장을 촉진시키며 밀도값의 증대를 가져오고 전기전도도의 증가를 가져오는 긍정적인 효과를 나타냈다.

• Nuclear Engineering and Technology
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• 제50권3호
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• pp.416-424
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• 2018

Microstructure of oxide formed on Zr-Nb-Sn tube sample was intensively examined by scanning transmission electron microscopy after exposure to simulated primary water chemistry conditions of various concentrations of Zn (0 or 30 ppb) and dissolved hydrogen ($H_2$) (30 or 50 cc/kg) for various durations without applying desirable heat flux. Microstructural analysis indicated that there was no noticeable change in the microstructure of the oxide corresponding to water chemistry changes within the test duration of 100 days (pretransition stage) and no significant difference in the overall thickness of the oxide layer. Equiaxed grains with nano-size pores along the grain boundaries and microcracks were dominant near the water/oxide interface, regardless of water chemistry conditions. As the metal/oxide interface was approached, the number of pores tended to decrease. However, there was no significant effect of $H_2$ concentration between 30 cc/kg and 50 cc/kg on the corrosion of the oxide after free immersion in water at $360^{\circ}C$. The adsorption of Zn on the cladding surface was observed by X-ray photoelectron spectroscopy and detected as ZnO on the outer oxide surface. From the perspective of $OH^-$ ion diffusion and porosity formation, the absence of noticeable effects was discussed further.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.259-262
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• 1999

In this study, we investigated magnetic Properties of N $i_{0.2-x}$C $u_{x}$Z $n_{0.305}$F $e_{0.495}$ (x=0 ~0.2) ferrites. As the increased, the density and shrinkage increased until 5.3g/㎤, 20% respects, but the absorption decreased rate until 0.01%. As a results of the density, absorption rate, and shrinkage rate, the grain growth progressed rapidly in x=0.125 at 105$0^{\circ}C$, x=0.075 at 115$0^{\circ}C$, and x=0.025 at 115$0^{\circ}C$ for 3hours. As the CuO concentration increased, initial permeability increased at sintered 105$0^{\circ}C$ and 115$0^{\circ}C$ for 3 hours, but decreased at 125$0^{\circ}C$ for 3 hoers. The complex permeability as a function of frequency were high values at sintered 105$0^{\circ}C$ for 3 hours in x=0.005, 0.075.5.5.5.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.693-698
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• 1995

We fabricated Zinc Oxide transparent conductive thin films with 2wt% of A1203 doping using rf magnetron sputtering. And we investigated electrical and optical characteristics of them which were made with conditions ; rf power 60-300W, thickness of film 3000 11000.angs.. Resistivity, carrier concentration and Hall mobility were investigated for electrical characteristics. Transmittance and optical band gap were investigated with Spectrophotometer in the wavelength range between 200-900 nm. As a result, ZnO thin film fabricated with rf power of 180W and thickness of 5000.angs. showed the best properties. At the best condition, the sample has resistivity of 1*10$\^$-4/.ohm.cm and transmittance of 95% in the visible range.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

• 한국수산과학회지
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• 제46권6호
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• pp.930-940
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• 2013

We evaluated contamination with organic matter and trace metals by analyzing grain size, ignition loss (IL), chemical oxygen demand (COD), acid volatile sulfide (AVS), and trace metals (Al, Fe, Cu, Pb, Zn, Cd, Ni, Cr, Mn, Hg, and As) in surface sediments at 28 stations around the Geum River estuary in July 2008. The surface sediments in the estuary were mainly composed of coarse sediment (sand and muddy sand), with mean grain size (Mz) ranging between $2-4{\O}$. The high concentrations of IL, COD, and trace metals were mainly found at stations in front of the Gusan outer port and industrial complex, and near the Seocheon coast with relatively fine sediments. In addition, the concentrations of IL and all trace metals, except Pb and As, showed good positive correlations with Mz, indicating that the concentrations of organic matter and trace metals were mainly dependent on sediment grain size. The concentrations of COD, AVS, and trace metals in most sediments did not exceed the sediment quality guideline (SQGs). Although the sediments in the study region are not polluted with organic matter and trace metals, there are many point sources of pollutants, such as Gusan port and industrial complex, Janghang refinery, and a thermoelectric power plant around the Geum River estuary. Thus, the management of coastal environments through periodic monitoring of organic matter and trace metals is required in the future.

• 한국분말재료학회지
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• 제30권6호
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• pp.470-477
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• 2023

The effects of annealing on the microstructure and mechanical properties of Al-Zn-Mg-Cu-Si alloys fabricated by high-energy ball milling (HEBM) and spark plasma sintering (SPS) were investigated. The HEBM-free sintered alloy primarily contained Mg₂Si, Q-AlCuMgSi, and Si phases. Meanwhile, the HEBM-sintered alloy contains Mg-free Si and θ-Al₂Cu phases due to the formation of MgO, which causes Mg depletion in the Al matrix. Annealing without and with HEBM at 500℃ causes partial dissolution and coarsening of the Q-AlCuMgSi and Mg₂Si phases in the alloy and dissolution of the θ-Al₂Cu phase in the alloy, respectively. In both alloys, a thermally stable α-AlFeSi phase was formed after long-term heat treatment. The grain size of the sintered alloys with and without HEBM increased from 0.5 to 1.0 ㎛ and from 2.9 to 6.3 ㎛, respectively. The hardness of the sintered alloy increases after annealing for 1 h but decreases significantly after 24 h of annealing. Extending the annealing time to 168 h improved the hardness of the alloy without HEBM but had little effect on the alloy with HEBM. The relationship between the microstructural factors and the hardness of the sintered and annealed alloys is discussed.