• Title/Summary/Keyword: ZnO Grain

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Multicomponent IGZO Ceramics for Transparent Electrode Target Fabricated from Oxides and Nitrates (산화물과 질산염으로 제조한 투명전극 타깃용 다성분계 IGZO 세라믹스)

  • Lee, Hyun-Kwun;Yoon, Ji-Hye;Cho, Kyeong-Sik
    • Journal of Powder Materials
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    • v.26 no.5
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    • pp.375-382
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    • 2019
  • Homogeneous multicomponent indium gallium zinc oxide (IGZO) ceramics for transparent electrode targets are prepared from the oxides and nitrates as the source materials, and their properties are characterized. The selected compositions were $In_2O_3:Ga_2O_3:ZnO$ = 1:1:2, 1:1:6, and 1:1:12 in mole ratio based on oxide. As revealed by X-ray diffraction analysis, calcination of the selected oxide or nitrides at $1200^{\circ}C$ results in the formation of $InGaZnO_4$, $InGaZn_3O_6$, and $InGaZn_5O_8$ phases. The 1:1:2, 1:1:6, and 1:1:12 oxide samples pressed in the form of discs exhibit relative densities of 96.9, 93.2, and 84.1%, respectively, after sintering at $1450^{\circ}C$ for 12 h. The $InGaZn_3O_6$ ceramics prepared from the oxide or nitrate batches comprise large grains and exhibit homogeneous elemental distribution. Under optimized conditions, IGZO multicomponent ceramics with controlled phases, high densities, and homogeneous microstructures (grain and elemental distribution) are obtained.

The Effect of Chemical Composition and Sintering Temperature on The Improvement of Physical Properties of Mn-Zn Ferrites (Mn-Zn ferrite의 성분 및 소결 온도에 따른 물리적 특성의 향상 연구)

  • 고재귀
    • Journal of the Korean Magnetics Society
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    • v.5 no.4
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    • pp.269-274
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    • 1995
  • The basic composition of Mn-Zn ferrite was $Mn_{0.631}Zn_{0.316}Fe_{2.053}O_{4}$(specimen A), $Mn_{0.584}Zn_{0.312}Fe_{2.104}O_{4}$(specimen B) and $Mn_{0.538}Zn_{0.308}Fe_{2.154}O_{4}$(specimen C) with additional 0.1 mol % $CaCo_{3}$ and 0.04 mol % $V_{2}O_{5}$. For high per¬meability and acceleration of grain growth, $CaCo_{3}$ and $V_{2}O_{5}$. was added. The mixture of the law materials was calcinated at $950^{\circ}C$ for 3 hours and then milled. The compacts of toroidal type were sintered at different temperature($1250^{\circ}C$, $1300^{\circ}C$, $1350^{\circ}C$) for 2 hours in $N_2$ atmosphere. The effects of the various raw material composition and sintered temperature on the physical properties of Mn-Zn ferrite have been investigated. They turned out to be spinel structure by X-ray diffraction and the size of grain from SEM was from $18\;\mu\textrm{m}\;to\;23\;\mu\textrm{m}$. As the sintering temperature was increased from $1250^{\circ}C$ to $1350^{\circ}C$, the initial permeability and magnetic induction has increased and the both of Q factor and coercive force has decreased. The coercive force and curie temperature were almost the same at each specimen Their values were about 0.45 Oe and $200^{\circ}C$. The frequency of specimen will used in the range from 200 kHz to 2 MHz. The basic composition of $Mn_{0.584}Zn_{0.312}Fe_{2.104}O_{4}$(specimen B) sintered at $1300^{\circ}C$ shows the best results at magnetic induction (Br & Bm).

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Influence of the Fluorine-doping Concentration on Nanocrystalline ZnO Thin Films Deposited by Sol-gel Process

  • Yoon, Hyunsik;Kim, Ikhyun;Kang, Daeho;Kim, Soaram;Kim, Jin Soo;Son, Jeong-Sik;Leem, Jae-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.204.2-204.2
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    • 2013
  • Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.

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Preparation of superparamagnetic ZnFe2O4 submicrospheres via a solvothermal method

  • Ma, Jie;Chen, Bingjie;Chen, Bingkun;Zhang, Shuping
    • Advances in nano research
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    • v.5 no.2
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    • pp.171-178
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    • 2017
  • Superparamagnetic Zinc ferrite submicropheres are firstly synthesized via a one-pot solvothermal approach at $200-215^{\circ}C$ for 4-8 hours. $ZnCl_2$, $FeCl_3$ and NaAc are used as precursors with ethylene glycol solvent. The X-ray diffraction (XRD) data indicate that $ZnFe_2O_4$ nanoparticles with the grain size around $15{\pm}3nm$ can be successfully synthesized via the one-pot method. The scanning/transmission electronic microscope (SEM/TEM) images further show the samples are submicrospheres self-assembled by nanoparticles with size about 375-500 nm changed with reaction conditions. Room-temperature vibration magnetic strength measurements (VMS) demonstrates the as-obtained $ZnFe_2O_4$ submicrospheres show prefect superparamagnetism, whose coercivity force and remanence are practically nil. The reaction temperature and time influence on the crystallinity, diameter, saturated magnetic intensity and morphology of the particles.

Microstructure of ZnO Thin Film on Nano-Scale Diamond Powder Using ALD (나노급 다이아몬드 파우더에 ALD로 제조된 ZnO 박막 연구)

  • Park, S.J.;Song, S.O.
    • Journal of the Korean Vacuum Society
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    • v.17 no.6
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    • pp.538-543
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    • 2008
  • Recently a nano-scale diamond is possible to manufacture forms of powder(below 100 nm) by new processing of explosion or deposition method. Using a sintering of nano-scale diamond is possible to manufacture of grinding tools. We have need of a processing development of coated uniformly inorganic to prevent an abnormal grain growth of nano-crystal and bonding obstacle caused by sintering process. This paper, in order to improve the sintering property of nano-scale diamond, we coated ZnO thin films(thickness: $20{\sim}30\;nm$) in a vacuum by ALD(atomic layer deposition) Economically, in order to deposit ZnO all over the surface of nano-scale diamond powder, we used a new modified fluidized bed processing replaced mechanical vibration effect or fluidized bed reactor which utilized diamond floating owing to pressure of pulse(or purge) processing after inserted diamond powders in quartz tube(L: 20 mm) then closed quartz tube by porosity glass filter. We deposited ZnO thin films by ALD in closed both sides of quartz tube by porosity glass filter by ALD(precursor: DEZn($C_4H_{10}Zn$), reaction gas: $H_2O$) at $10^{\circ}C$(in canister). Processing procedure and injection time of reaction materials set up DEZn pulse-0.1 sec, DEZn purge-20 sec, $H_2O$ pulse-0.1 sec, $H_2O$ purge-40 sec and we put in operation repetitive 100 cycles(1 cycle is 4 steps) We confirmed microstructure of diamond powder and diamond powder doped ZnO thin film by TEM(transmission electron microscope) Through TEM analysis, we confirmed that diamond powder diameter was some $70{\sim}120\;nm$ and shape was tetragonal, hexagonal, etc before ALD. We confirmed that diameter of diamond powders doped ZnO thin film was some $70{\sim}120\;nm$ and uniform ZnO(thickness: $20{\sim}30\;nm$) thin film was successfully deposited on diamond powder surface according to brightness difference between diamond powder and ZnO.

Sintering and Microwave Dielectric Properties of Bi18(Ca0.725Zn0.275)8Nb12O65 [BCZN] Dielectrics with V2O5 Addition (소결조제 V2O5 첨가에 따른 Bi18(Ca0.725Zn0.275)8Nb12O65 [BCZN] 유전체의 소결 및 마이크로파 유전특성)

  • Lee, Young-Jong;Kim, Sung-Soo
    • Journal of Powder Materials
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    • v.17 no.4
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    • pp.289-294
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    • 2010
  • For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

Electrical properties of the ZnO varistors with the amount of rare-earth metal oxide addition (희토류 금속 산화물 첨가에 따른 ZnO varistor의 전기적 특성)

  • Cho, Hyun-Moo;Lee, Jong-Deok;Park, Sang-Man
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.336-337
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    • 2005
  • ZnO varistor ceramics were fabricated as a function of the amount of $Y_2O_3$ addition and sintered at $1250^{\circ}C$ for 2 hour. The average grain size was decreased from 14.2 ${\mu}m$ to 8.3 ${\mu}m$ with the amount of $Y_2O_3$ addition, and varistor voltage was increased from 433 V to 563 V with $Y_2O_3$ addition. Nonlinear coefficient a of all specimens were increased with the amount of $Y_2O_3$ more than 67, in case of $Y_2O_3$ 0.01wt% addition showed the excellent results of 87. And leakage current was less than $1{\mu}A$ at 82% of varistor voltage. The clamping voltage ratio of the specimens added 0.01wt% $Y_2O_3$ was 1.41 at 25A [8/20${\mu}s$]. At the specimen 0.01wt% $Y_2O_3$ addition. endurance of surge current and deviation of varistor voltage were 5700A/$cm^2$ and $\Delta$-2.86%, respectively.

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The Study of Magnetic Properties of Ni-Zn-Cu Ferrite by variation of Low Temperature Sintered (저온소결 온도변화에 따른 Ni-Zn-Cu 페라이트의 자기적 특성 연구)

  • Koh, Jae-Gui
    • Journal of the Korean Magnetics Society
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    • v.17 no.6
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    • pp.232-237
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    • 2007
  • We have synthesized the low temperature sintered of Ni-Zn-Cu ferrite with nonstoichiometric composition a little deficient in $Fe_2O_3$ from $(Ni_{0.2}Cu_{0.2}Zn_{0.6})_{1+x}(Fe_2O_3)_{1-x}$. For low loss and acceleration of grain growth $TiO_2$ and $Li_2CO_3$ was added from 0.25 mol% to 1.0 mol%. The mixture of the law materials was calcinated and milled. The compacts of toroidal type were sintered at different temperature $(875^{\circ}C,\;900^{\circ}C,\;925^{\circ}C\;950^{\circ}C)$ for 2 hours in air followed by an air cooling. Then, effects of composition and sintering temperatures on the physical properties such as density, resistivity, magnetic induction, coercive force, initial permeability, and quality factor of the Ni-Zn-Cu ferrite were investigated. The density of the Ni-Zn-Cu ferrite was $4.85\sim5.32g/cm^3$, resistivity revealed $10^8\sim10^{12}\Omega-cm$. The magnetic properties obtained from the aforementioned Ni-Zn-Cu ferrite specimens were 1,300 gauss for the maximum induction, 4.5 oersted for the coercive force, 275 for the initial permeability, and 83 for the quality factor. The physical properties indicated that the specimens could be utilized as the core of high frequency range (involved microwave range) communication and deflection yoke of T.V.

Isotope-Aided Micronutrient Studies in Rice Production with Special Reference to Zinc Deficiency (I) -Efficiency of $^{65}Zn$ labelled fertilizers under flooded so il condition-

  • Kim, Tai-Soon;Han, Kang-Wan;U, Zang-Kual;Song, Ki-Joon
    • Nuclear Engineering and Technology
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    • v.10 no.4
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    • pp.215-222
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    • 1978
  • Using tracer technique of $^{65}Zn$, a field experiment has been carried out to evaluate the efficiency of zinc fertilizer by rice plant grown under flooded conditions. The treatments include zinc slufate mixed throughout the soil with and without organic matter, combined urea-zinc fertilizer (N: 37.7%, Zn: 3.1%), and surface application at transplaning and two weeks after transplanting at the rate of 5kg Zn/ha respectively. Other treatments were zinc sulfate mixed throughout the soil at the rate of 10 kg and 20 kg Zn/ha respectively. Root dipping in 2 % ZnO suspension, only organic matter added, and control were also included. There was not much difference in rough grain yield between zinc levels and different application methods, but the highest yield was obtained from the treatment of the root dipping in 2% ZnO suspension. Among the 5kg Zn/ha treatments, the highest total zinc yield was observed from the zinc mixed throughout the soil. The organic matter treatment seemed to reduce the zinc fertilizer efficiency. In case of the zinc fertilizer levels, 5kg Zn/ha mixed throughout the soil showed the highest zinc fertilizer efficiency as compared with 10kg and 20kg Zn/ha treatments.

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Sintering and Electrical Properties of Cr-doped ZnO-Bi2O3-Sb2O3 (Cr을 첨가한 ZnO-Bi2O3-Sb2O3계의 소결과 전기적 특성)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.942-948
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    • 2010
  • In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.