• Journal of Sensor Science and Technology
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• v.25 no.6
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• pp.440-446
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• 2016

This study introduces the characteristics of current-voltage (I-V) and impedance variance for $ZnO-Zn_2BiVO_6-Co_3O_4$ (ZZCo), which is sintered at $900^{\circ}C$, according to temperature changes. ZZCo varistor demonstrates dramatic improvement of non-linear coefficient, ${\alpha}=66$, with lower leakage current and higher insulating resistivity than those of ZZ ($ZnO-Zn_2BiVO_6$) from the aspect of I-V curves. While both systems are thermally stable up to $125^{\circ}C$, ZZCo represents a higher grain boundary activation energy with 1.05 eV and 0.94 eV of J-E-T and from IS & MS, respectively, than that of ZZ with 0.73 eV and 0.82 eV of J-E-T and from IS & MS, respectively, in the region above $180^{\circ}C$. It could be attributed to the formation of $V^*_o$(0.41~0.47 eV) as dominant defect in two systems, as well as the defect-induced capacitance increase from 781 pF to 1 nF in accordance with increasing temperature. On the other hand, both the grain boundary capacitances of ZZ and ZZCo are shown to decrease to 357 pF and 349 pF, respectively, while the resistances systems decreased exponentially, in accordance with increasing temperature. So, this paper suggests that the application of newly formed liquid phases as sintering additives in both $Zn_2BiVO_6$ and the ZZCo-based varistors would be helpful in developing commercialized devices such as chips, disk-type ZnO varistors in the future.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.586-591
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• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.231-236
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• 2005

To investigate the electrical properties at the single grainboundary of ZnO varistors, micro-electrodes were fabricated on the surface which was polished and thermally etched. Our micro-electrode had 2000 $\AA$ silicon nitride layer between micro-electrode and ZnO surface. This layer was deposited by PECVD and etched by RIE after photoresistor pattering process using by mask 1. The metal patterning of micro-electrodes used lift-off method. We found that the breakdown voltage of single grainboundary is about 3.5∼4.2 V at 0.1 mA on I-V curves. Also, capacitance-voltage measurement at single grainboundary gave several parameters( $N_{d}$, $N_{t}$, $\Phi$$_{b}$, t) which were related with grainboundary.ary.

• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.366-370
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• 2005

Single gram-boundary varistors were fabricated using hydrothermal and vapor phase grown ZnO single crystals and their voltage-current relation was studied. The single crystal bonded single junction varistor showed various voltage-current relationship and different breakdown voltage of 0.24-3V. The different types of non-linear current voltage behaviors was attributed to the variation of electrical conductivity in ZnO single crystals.

• Journal of the Korean Institute of Navigation
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• v.22 no.4
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• pp.69-75
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• 1998

The super wideband electromagnetic wave absorber in RF-A-PF type has been proposed, which can be used for an anechoic chamber, wall material to prevent TV ghost, etc, In this paper, $Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$ Ferrite Powder has been fabricated. Using this, then, [$Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$-Rubber composite for RF-layer in the RF-A-PF type absorber has been fabricated and its characteristics has been analyzed. As a result, it has been shown that the $Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$-Rubber composit with the quantity $_x$ of $Ni_x$ between 0.5 and 0.6 is suitable for the RF-layer in the case of which the grain size is sub-micrometer order.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.58-61
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• 2005

In an effort to improve the electrical properties of ZnO:Al transparent electrode films, post-annealing treatment in hydrogen atmosphere was attempted with varying annealing time at 573 K for compatibility with typical display device fabrication processes. It was observed that carrier concentrations and mobilities increased with longer annealing time with small changes in crystallinity. This resulted in substantial decrease in resistivity from $4.80{\times}10^{-3}$ to $8.30{\times}10^{-4}{\Omega}cm$ due to increased carrier concentration. Such improvements in electrical properties are attributed to the passivation of the grain boundary surfaces. The optical properties of the films, which changed in accordance with the Burstein-Moss effect, were consistent with the observed changes in electrical properties.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 1999.09a
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• pp.1-63
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• 1999

Generation of abnormally large grains in the microstructure of small grains has been investigated on some ferrites. Some fractions of large grains were observed in the microstructure of sintered ZnFe$_2$O$_4$, Mn-ZnFe$_2$O$_4$, Fe$_3$O$_4$(in N$_2$) and MnFe$_2$O$_4$(in air). On the other hand, the large grains were not observed in NiFe$_2$O$_4$ and CoFe$_2$O$_4$, independent of calcining and sintering conditions. The large grains seem to be generated in such ferrites that are easy to vary their compositions or valencies at high temperatures. As the sintering proceeded, the number of large grains was increasing to form a continuous structure consisting of large grains, while the size of large grains did not increase remarkably. In addition, the growth of small grains was also very slow during the generation of the large grains. The large grains appeared to be suddenly generated after some induction periods. Avrami equation could be applied to the relation between net volume of large grains and sintering time. Thus, the grain boundaries may be strongly stabilized when the large grains are generated. The large grain in generated by the local activation of the stabilized grain boundaries, which is caused by the variation of compositions or valencies during sintering. It is concluded that the essence of the abnormal grain growth is not the generation of abnormally large grains, but the abnormal stabilization and the local activation of the grain boundaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.785-787
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• 2002

Conductivity and transmittancy of ZnO is very excellent and the price is low. So the study of transparent electrode materials and electromagnetic wave shielding wall is actively in progress. We add $Al_2O_3$(0.0, 2.0, 3.0, 5.0wt%) to ZnO and observe microscopic structure and conductivity. For XRD observation, Al peak of AZO is increased by increasing the amount of $Al_2O_3$. We observe that the size of grain is reduced by increasing the liquid phase of grain boundary to SEM observation. Conductivity of AZO is increased by increasing the amount of $Al_2O_3$. We confirm the application possibility of the materials for electromagnetic wave reflection materials.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.204-210
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• 2008

ZnO thin films were grown on a glass by RF sputtering system with RF power 100W and oxygen partial pressure of $0%{/sim}30%$. Elliptic constants were measured by using a phase modulated spectroscopic ellipsometer and analyzed with the Tauc-Lorentz dispersion formula and best fit method in the range of 1.5 to 3.8eV. Also, scanning electron microscope(SEM) was used for the analysis of surface crystallization condition. From elliptic constants spectra, optical constants, thickness and roughness of ZnO films were evaluated. Total thickness of ZnO films obtained by ellipsometry showed good agreement with SEM data. It was found that the grain size of the films were getting smaller with increasing oxygen partial pressure. Band-gap of ZnO films increase with the oxygen partial pressure. These findings clearly indicate that optical properties of ZnO films are strongly dependent on the oxygen partial pressure. It could be explained that increasing the oxygen partial pressure induced high crystalline imperfection in the ZnO films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.258-263
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• 2021

ZnO varistor is a semiconductor device which can serve to protect the circuit from surge voltage because its non-linear I-V characteristics by controlling the microstructure of grain and grain boundaries. In order to obtain desired electrical properties, it is important to control microstructure evolution during the sintering process. In this research, we defined a dataset composed of process conditions of sintering and relative permittivity of sintered body, and collected experimental dataset with DOE. Meta-models can predict permittivity were developed by learning the collected experimental dataset on various machine learning algorithms. By utilizing the meta-model, we can derive optimized sintering conditions that could show the maximum permittivity from the numerical-based HMA (Hybrid Metaheuristic Algorithm) optimization algorithm. It is possible to search the optimal process conditions with minimum number of experiments if meta-model-based optimization is applied to ceramic processing.