• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.905-908
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• 2001

The microstructure and the magnetic properties of Mn-Zn ferrite, which were power loss and saturation magnetic flux density, were investigated as the function of the process before firing. The highest initial permeability and the lowest power loss were attained to the specimen with CaO 400 ppm as a resulted from the highest solubility to SiO$_2$and the creation of liquid phase which improved sintering. The biggest grain size, the highest saturation magnetic flux density and the lowest power loss, which was resulted from that the eddy current loss increased as grain size increased but the hysteresis loss much more decreased and the hysteresis loss strongly influenced on the total power loss rather than the eddy current loss, were obtained to the Mn-Zn ferrite added 2wt% PVA. The power loss was lowest and the saturation magnetic flux density was highest in case of 1 ton/$\textrm{cm}^2$ and the grain size was not influenced.

• Journal of Integrative Natural Science
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• v.14 no.1
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• pp.1-5
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• 2021

A zinc oxide thin film was made by varying the deposition time on the silicon(110) substrate by using a radio frequency sputtering time of 60 minutes, 120 minutes and 180 minutes. As a result of analyzing the grain growth surface of the ZnO₂ thin film using an X-ray diffraction apparatus, the directions of the main growth plane (002) and (103) planes of the thin film were significantly affected by the deposition time. As a result of observing the particle growth of the ZnO₂ thin film through an electron scanning microscope, it was observed that in the initial stage of deposition of the ZnO₂ thin film, an incubation time was required during which growth was stagnant, and then particle growth occurred again after a certain period of time. As a result of chemical analysis of the ZnO₂ thin film, the increase in the deposition time did not change with the amount of oxygen in the ZnO₂ thin film, but a change in the composition of Zn was observed, indicating that the deposition time of the thin film had an effect on the Zn component in the thin film.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.1026-1034
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• 1995

It is well known that the addition of CaO-SiO$_2$to Mn-Zn ferrites forms an insulating grain bounary layer with high electrical resistivity. This study investigated the effect of Nb$_2$O$_{5}$ on the electromagnetic properties of high frequency low loss Mn-Zn ferrites. The addition of 300ppm Nb$_2$O$_{5}$ developed an exaggerated grain growth while the addition of CaO-SiO$_2$addition with 200ppm Nb$_2$O$_{5}$ more effectively increased the density than that without Nb$_2$O$_{5}$. The addition of Nb$_2$O$_{5}$ showed the lower power loss below 100 ppm SiO$_2$and the Nb$_2$O$_{5}$-CaO addition lowered the power loss at higher sintering temperature.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.453-457
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• 2007

Zinc oxide (ZnO) and Ga doped zinc oxide (GZO) with different thickness in range of 10nm to 100nm are prepared on glass substrate by RF magnetron sputtering at room temperature. The structural and optical properties of the thin films is evaluated. The structural properties of ZnO and GZO are investigated by Tunneling Electron Microscopy (TEM) and scanning electron microscopy (SEM). Optical properties are also investigated by UV-VIS-NIR spectrophotometer (200$\sim$1400nm). The much larger grain size of ZnO compared to GZO decreased the light scattering at the grain boundary and improved the transmittance. The transmittance of ZnO is higher than that of GZO through all of the ranges of wavelengths. In case of over 50nm, we found that the transmittance of ZnO is 20% higher than that of GZO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.416-420
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• 2004

Varistors based on M.Matsuoka were prepared from ZnO nanopowders, every one of which had bar type and about less 100nm length. The compact green disks were conventionally sintered in air for 2 hours at a temperature of $1050^{\circ}C$. The Varistors with nonlinear coefficient ${\alpha}=45$, leakage current $I_{\ell}=2{\times}10^{-7}A/cm^2$, operating voltage 9000v/cm, and average grain size $3{\mu}m$ were obtained. The advantages of the samples were due to greater structural homogenity, higher density, smaller grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.97-100
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• 1992

The Degradation mechanism of the ZnO-varistor fabricated with the content of a 3-Composition seed grain is discussed using the method of Thermally Stimulated Current (TSC). The spectra of TSC is measured in the temperature range of -130～270$^{\circ}C$ with a various forming electric fields E$\sub$f/, temperature T$\sub$f/ time tf, and a various rising rate of temperature. It is observed that there are appeared the peaks of ${\alpha}$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$from high temperature in a TSC spectrum. It seems that ${\alpha}$$_1$ peak is due to thermal depolarization of donor ions forming the space charge in the depletion layer, and ${\alpha}$$_2$peak is due to the detrapping of trapped electrons in deep trap level of intergranular layer, and ${\beta}$ peak is due to the thermal exciting of carrier existing in the donor level of grain itself, and ${\gamma}$ peak is due to the thermal exciting of trapped carrier in all shallow trap site randomly distributed in the inner of sample and/or a intrinsic impurity existing in it.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.8
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• pp.1211-1216
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• 1989

To enhance the breakdown properties of low voltage-oriented ZnO varistor, sample were fabricated with additive oxides and sintering conditions. Addition of TiO2 lowered breakdown voltage` nonlinear resistances were lowered about 10V/mm and nonlinear exponents were not lowered with respect to it with the basic composition. To the samples added TiO2, V2ko5, and Cr2O3, microstructures were observed by SEM, moreover Ti was detected at grainboundaries and within the grain by EDS. Addition of Si-oxides and Sb2O3 increased nonlinear exponent and also increased nonlinear resistance, by addition of TiO2 to these samples at the sintering conditions of 1250\ulcorner and 1 hour we could fabricate low voltage-oriented ZnO varistors with nonlinear exponent of 30 or more and with real breakdown voltage of 30V/mm.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.74-80
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• 2020

Synthesis of composite powders for the Fe₂O₃-Zn system by mechanical alloying (MA) has been investigated at room temperature. Optimal milling and heat treatment conditions to obtain soft magnetic composite with fine microstructure were investigated by X-ray diffraction, differential scanning calorimetry (DSC) and vibrating sample magnetometer (VSM) measurement. It is found that α-Fe/ZnO composite powders in which ZnO is dispersed in α-Fe matrix can be obtained by MA of Fe₂O₃ with Zn for 4 hours. The change in magnetization and coercivity also reflects the details of the solid-state reduction process of hematite by pure metal of Zn during MA. Densification of the MA powders was performed in a spark plasma sintering (SPS) machine at 900 ~ 1,000 ℃ under 60 MPa. Shrinkage change after SPS of sample MA'ed for 5 hrs was significant above 300 ℃ and gradually increased with increasing temperature up to 800 ℃. X-ray diffraction results show that the average grain size of α-Fe in the α-Fe/ZnO composite sintered at 900 ℃ is in the range of 110 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.818-824
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• 2008

The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.707-711
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• 2006

ZnO was doped up to 0.3 wt% for improving the electrical properties of lead-free $[Li_{0.04}(Na_{0.44}Ko_{0.52})-(Nb_{0.86}\;Ta_{0.10}\;Sb_{0.04})]O_3$ piezoelectric ceramics. The ceramics were fabricated with the conventional sintering processes. Crystal structure of the samples was tetragonal phase regardless of ZnO amount. However, the piezoelectric properties were varied with the ZnO amount. The electro-mechanical coupling factor $(k_p)$ was with the ZnO amount up to 0.2 wt% but decreased with the further addition. the maximum value of $k_p$ was 0.475. Density, piezoelectric charge constant and relative dielectric constant was also showed maximum value at 0.2 wt%. The maximum values are $4.75g/cm^3$, 275 pC/N, 1403, respectively. In contrast, the mechanical quality factor $(Q_m)$ was not varied with increasing the ZnO addition up to 0.2 wt% but rapidly increased at 0.3 wt%.