• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.193.1-193
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• 2002

• 한국재료학회지
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• 제16권1호
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• pp.19-24
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• 2006

ZnO:Al(AZO) films prepared by rf magnetron sputtering on glass substrate and textured by post-deposition chemical etching were applied as front contact and back reflectors for ${\mu}c$-Si:H thin film solar cells. For the front transparent electrode contact, AZO films were prepared at various working pressures and substrate temperature and then were chemically etched in diluted HCl(1%). The front AZO films deposited at low working pressure(1 mTorr) and low temperature ($240^{\circ}C$) exhibited uniform and high transmittance ($\geq$80%) and excellent electrical properties. The solar cells were optimized in terms of optical and electrical properties to demonstrate a high short-circuit current.

• 한국산학기술학회논문지
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• 제8권3호
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• pp.472-476
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• 2007

본 연구에서는 p-형 ZnO 박막 증착법 및 특성의 안정화 방안에 대하여 조사하였다. p-형 ZnO는 AlAs와 ZnO target을 사용하여 RF magnetron sputtering 기법으로 co-deposition하여 제작하였으며 특성 변화를 조사하기 위해 $250^{\circ}C$에서 144시간까지 스트레스 인가 시간을 변화하며 Photoluminescence 및 Hall 측정을 수행하였다. 연구 결과 co-deposition 은 p-형 박막을 제작하기 위해 유효한 방법인 것으로 밝혀졌으며, 특히 고온에서 이루어지는 과정을 수행하기 전 30% H2O2용액에 1분간 처리하는 것이 이후의 열처리 과정 중 발생하는 특성 변화를 크게 억제하는 것으로 관찰되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.252-252
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• 2010

AIZTO (Al-In-Sn-ZnO) thin film was deposited on glass substrate at room temperature by facing target sputtering (FTS) system. The FTS system was designed to array two targets facing each other. Two different kinds of targets were installed on FTS system. We used the ITO (In2O3 90wt%, SnO2 10wt%) target and the AZO (ZnO 98wt%, Al2O3 2wt%). AIZTO films were deposited in each of the applied power of the targets. The electrical and structural properties of the as-deposited AIZTO thin films were then examined by hall-effect measurement, and by using atomic force microscope (AFM), X-ray diffractometer (XRD), and energy dispersive x-ray spectroscopy (EDX). The optical property was measured by an UV-VIS spectrometer.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1733-1736
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• 2008

ZnO thin films with preferred orientation along the (0 0 2) plane were fabricated by a sol-gel method. The effects of the annealing temperature, time, and thickness were studied by investigating UV-visible spectra, FT-IR spectra, and XRD of ZnO films. The films were dried and annealed ed at $100^{\circ}C,\;200^{\circ}C$, and $300^{\circ}C$ for 1hr, 2hrs, and 3hrs, respectively. The film showed the preferred (0 0 2) orientation and high transmittance near 90% in the visible range. Also, SEM images of the films exhibited very smooth surfaces without holes and cracks. Schottky diodes were fabricated by using ZnO sol-gel material. Au and Al were used as electrodes to make Ohmic and Schottky contacts, respectively. The annealing temperature, time and the thickness dependent I-V characteristics were presented in this article.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.923-929
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• 2006

Single crystalline ZnO films were successfully grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the R-plane sapphire was determined to be $[-1101]Al_2O_3{\parallel}[0001]ZnO,\;[11-20]Al_2O_2{\parallel}[-1100]ZnO$ based on the in-situ reflection high-energy electron diffraction analysis and confirmed again by high-resolution X-ray diffraction measurements. Grown (11-20) ZnO films surface showed mound-like morphology along the <0001>ZnO direction and the RMS roughness was about 4 nm for $2{\mu}m{\times}2{\mu}m$ area.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.222-222
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• 2010

Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

• 한국진공학회지
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• 제10권3호
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• pp.335-340
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• 2001

RF마그네트론 스퍼터링법으로 사파이어 기판 위에 Ga을 1 wt% 첨가한 ZnO 박막(GZO)을 기판온도 $550^{\circ}C$에서 성장시켜 다결정 박막을 제조하였다. 이러한 박막은 불충분한 전기적 특성이나 PL(Photoluminescence) 특성을 보이고 있다. 이러한 전하농도, 이동도 그리고 PL특성 등과 같은 전기적 광학적 특성을 향상시키고자 질소분위기하에서 RTA(Rapid Thermal Annealing) 법으로 $800^{\circ}C$와 $900^{\circ}C$에서 각각 3분씩 후열처리 하였다. RTA법으로 후열처리한 GZO박막의 비저항은 $2.6\times10^{-4}\Omega$/cm 였으며 전자농도와 이동도는 각각 $3.9\times10^{20}/\textrm{cm}^3$과 60 $\textrm{cm}^2$/V.s 였다. 이러한 물리적 성질들의 향상은 열처리시 원자 크기가 비슷한 도핑된 Ga 원자들이 일부 휘발되는 Zn 빈자리로 치환하면서 침입자리 보다는 치환자리로의 전이에 기인한 것으로 생각된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.278-280
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• 2007

a-Si:H/${\mu}$c-Si:H 적층형 태양전지의 효율향상을 위해 상부전지와 하부전지간의 접합특성은 매우 중요하다. 본 연구에서는, 접합특성을 향상하기 위하여 아몰퍼스 보다 전도도가 높은 마이크로화된 n층 또는 ZnO:Al을 중간층으로 삽입한 태양전지를 제조하였으며, 그 특성을 전기적, 광학적 방법으로 분석하였다. 전기적 특성에서, 상부전지 n층에 아몰퍼스를 적용한 태양전지의 경우, 상부전지와 하부전지 간의 직렬저항이 $500{\Omega}-cm^2$ 이상으로 높게 측정되었고, 이에 따라 AM 1.5 상태의 I-V 특성에서 비틀림 현상이 발생하여 곡선인자(Fill Factor : FF)가 낮게 측정되었다. 이에 반하여, 상부전지 n층에 마이크로층을 적용하거나, ZnO:Al 중간층을 삽입한 시편의 경우, 상부전지와 하부전지간의 직렬저항이 $1{\Omega}-cm^2$ 이하로 감소하였으며, 이와 같은 계면간의 접합특성 향상으로 I-V특성에서 비틀림 현상이 사라지고, FF가 70% 까지 증가하였다. 또한, 마이크로층과 ZnO:Al 중간층을 동시에 적용한 태양전지의 경우, FF가 75%까지 가장 높게 증가하였다. 광학적 특성의 경우, 같은 두께의 아몰퍼스 n층에 비하여 마이크로 n층이 투과도는 더 높게, 반사도는 낮게 측정되었으며, 이는 하부전지의 단락전류 (Short circuit current : Jsc)를 높여줄 것으로 판단된다.

• 한국재료학회지
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• 제15권8호
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• pp.518-520
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• 2005

Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.