Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Growth and Characterization of ZnO Thin Films on R-plane Sapphire Substrates by Plasma Assisted Molecular Beam Epitaxy

R-면 사파이어 기판 위에 플라즈마 분자선 에피탁시법을 이용한 산화아연 박막의 성장 및 특성평가

  • 한석규 (충남대학교 재료공학과) ;
  • 홍순구 (충남대학교 재료공학과) ;
  • 이재욱 (한국과학기술원 신소재공학과) ;
  • 이정용 (한국과학기술원 신소재공학과)
  • Published : 2006.10.01
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Abstract

Single crystalline ZnO films were successfully grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the R-plane sapphire was determined to be $[-1101]Al_2O_3{\parallel}[0001]ZnO,\;[11-20]Al_2O_2{\parallel}[-1100]ZnO$ based on the in-situ reflection high-energy electron diffraction analysis and confirmed again by high-resolution X-ray diffraction measurements. Grown (11-20) ZnO films surface showed mound-like morphology along the <0001>ZnO direction and the RMS roughness was about 4 nm for $2{\mu}m{\times}2{\mu}m$ area.

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References

  1. S. K. Hong, T. Hanada, H. J. Ko, Y. Chen, T. Yao, D. Imai, K. Araki, M. Shinohara, K. Saitoh, and M. Terauchi, 'Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN', Phys, Rev. B, Vol. 65, No. 11, p. 115331, 2002 https://doi.org/10.1103/PhysRevB.65.115331
  2. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, 'Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures', J Appl, Phys., Vol. 85, No.6, p. 3222, 1999 https://doi.org/10.1063/1.369664
  3. A. Hangleiter, J. S. Im, H. Kollmer, S. Heppel, J. Off, and F. Scholz, 'The role of piezoelectric fields in GaN-based quantum wells', MRS Internet Journal of Nitride Semiconductor Research, Vol. 3, p. 15, 1998 https://doi.org/10.1557/S1092578300000879
  4. P. Walterelt, O. Brandt, A. Trampert, H. T. Grahn, J. Mennlger, M. Ramstelner, M. Relche, and K. H. Ploog, 'Nitride semi-conductors free of electrostatic fields for efficient white light-emitting diodes', Nature, Vol. 406, p, 865, 2000 https://doi.org/10.1038/35022529
  5. F. Bernardini and V. Fiorentini, 'Macroscopic polarization and band offsets at nitride heterojunctions', Phys. Rev. B, Vol. 57, No. 16, p. R9427, 1998
  6. T. Deguchi, K. Sekiguchi, A. Nakamura, T. Sota, R. Matsuo, S. Chichibu, and S. Nakamura, 'Quantum-confined stark effect in an AlGaN/GaN/ AlGaN single quantum well structure', Jap, J. Appl. Phys., Part 2, Vol. 38, No. 8B, p. L914, 1999 https://doi.org/10.1143/JJAP.38.L914
  7. L. Calcagnile, G. Coli, M. De Vittorio, R. Rinaldi, P. V. Giugno, R. Cingolani, L. Vanzetti, L. Sorba, and A. Franciosi, 'Excitonic nonlinearities in wide gap II-VI multiple quantum wells', J. Crystal Growth, Vol. 159, No. 1-4, p. 793, 1996 https://doi.org/10.1016/0022-0248(95)00776-8
  8. G. Vaschenko, D. Patel, C. S. Menoni, N. F. Gardner, J. Sun, W. Gotz, C. N. Tome, and B. Clausen, 'Significant strain dependence of piezoelectric constants in $In_xGa_{1-x}N/GaN$ quantum wells', Phys. Rev. B, Vol. 64, No. 24, p. 241308, 2001 https://doi.org/10.1103/PhysRevB.64.241308
  9. V. Fiorentini, F. Bernardini, F. D. Sala, A. D. Carlo, and P. Lugli, 'Effects of macroscopic polarization in III-V nitride multiple quantum wells', Phys. Rev. B, Vol. 60, No. 12, p. 8849, 1999 https://doi.org/10.1103/PhysRevB.60.8849
  10. A. Chakraborty, H. Xing, M. D. Craven, S. Keller, T. Mates, J. S. Speck, S. P. DenBaars, and U. K. Mishra, 'Nonpolar a-plane p-type GaN and pn junction diodes', J. Appl, Phys., Vol. 96, No.8, p. 4494, 2004 https://doi.org/10.1063/1.1790065
  11. F. Bernardini, V. Fiorentini, and D. Vanderbilt, 'Spontaneous polarization and piezoelectricconstants of III-V nitrides', Phys. Rev. B, Vol. 56, No. 16, p. R10024, 1997 https://doi.org/10.1103/PhysRevB.56.R10024
  12. J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva, 'Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition', Appl. Phys. Lett., Vol. 61, No. 11, p. 1290, 1992
  13. J. Narayan, K. Dovidenko, A. K. Sharma, and S. Oktyabrsky, 'Defects and interfaces in epitaxial $ZnO/a-Al_2O_3$ and $AlN/ZnO/a-Al_2O_3 heterostructures', J. Appl. Phys., Vol. 84, No.5, p. 2597, 1998 https://doi.org/10.1063/1.368440
  14. D. S. Li, H. Chen, H. B. Yu, X. H. Zheng, Q. Huang, and J. M. Zhou, 'Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition', J. Crystal Growth, Vol. 265, p. 107, 2004 https://doi.org/10.1016/j.jcrysgro.2004.02.003