• 한국세라믹학회지
• /
• 제35권2호
• /
• pp.145-150
• /
• 1998

ZnGa2O4 thin film phosphors were deposited on Si(100) (111) wafers by rf magnetron sputtering. The ef-fects of substrates and deposition parameters on the growing mechanisms were studied. As a results of the effect of substrate temperature tranistions of growth orientation and different growing behaviors were ob-served. Also polycrystalline ZnGa2O4 thin film could not be achieved without oxygen gas. PL spectrum of ZnGa2O4 thin films were analyzed and showed broad band luminescence spectrum.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.539-542
• /
• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions at the calcine temperature of $700^{\circ}C$ and sintering temperature of $1300^{\circ}C$ in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on Si(100) substrate and prepared $ZnGa_2O_4$ phosphor thin film is annealed by rapid thermal processor(RTP) at $700^{\circ}C$, 15sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodoluminescenre(CL) spectrums of $ZnGa_2O_4$ phosphor thin film show main peak of 420nm and maximum intensity at the substrate temperature of $500^{\circ}C$ and annealing temperature of $700^{\circ}C$ 15sec.

• 반도체디스플레이기술학회지
• /
• 제13권1호
• /
• pp.91-95
• /
• 2014

(F,Ga) co-doped ZnO thin film on glass substrate was fabricated via a simple non-alkoxide sol-gel spin-coating. Contrary to the F single doped ZnO thin film, the (F,Ga) co-doped thin film showed a significant reduce in electrical resistivity after a second post-heat-treatment in reducing environment. The resulting decrease in electrical resistivity with Ga co-doping is considered to be resulted from the increases both carrier density and mobility. The optical transmittance of the (F,Ga) co-doped thin film in the visible range showed higher transmittance with Ga co-doping compared with F single doped ZnO thin film.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.1092-1095
• /
• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions as calcine and sintering temperature in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on $Pt/Ti/SiO_2/Si$ substrate and prepared $ZnGa_2O_4$ Phosphor thin film is annealed by rapid thermal processor(RTP) at $750^{\circ}C$, 10 sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodolumincsccnce(CL) succtrums of $ZnGa_2O_4$ phosphor target show main peak of 360nm and broad bandwidth of about 180nm.

• 한국진공학회지
• /
• 제22권3호
• /
• pp.119-125
• /
• 2013

In-line magnetron sputtering system을 사용하여 대면적($60{\times}60cm^2$) 소다라임 유리기판위에 투명전도성 ZnO(Al)와 ZnO(AlGa) 박막을 500 nm에서 1,450 nm까지 두께별로 증착하여 전기적, 광학적 특성을 연구하였다. XRD를 통해 c-축 방향성(002)을 가지고 성장된 것을 확인 하였다. Hall 특성 분석을 통해 이동도 및 캐리어 농도의 특성을 확인 하였으며, 그에 따른 ZnO(AlGa)의 비저항이 $9.03{\times}10^{-4}{\Omega}{\cdot}cm$에서 $7.83{\times}10^{-4}{\Omega}{\cdot}cm$으로 ZnO(Al) 보다 높게 나타났으며, 가시광선 영역에서 투과율은 87.6%에서 84.3%으로 나타났다. 따라서 ZnO(AlGa)는 전기적 특성이 우수하고 높은 투과율로 대면적용 투명전도성 재료로의 활용에 적합한 특성을 지닌 것을 확인 할 수 있었다.

• 한국결정성장학회지
• /
• 제31권2호
• /
• pp.73-77
• /
• 2021

RF 마그네트론 스퍼터링 공정에 의해 Ga-doped ZnO 박막이 O2 및 Ar 분위기 하에서 증착 조건에 따라 합성되었으며, N2 분위기에서, 600℃에서 급속열처리(RTA)를 실시하였다. 증착된 ZnO : Ga 박막에 대해 두께를 측정하였고, XRD 패턴 분석에 의해 결정상을 조사하였으며, FE-SEM, AFM 이미지에 의해 박막의 미세구조를 관찰하였다. O2 및 Ar 분위기 기체 종류별로 형성된 박막들의 증착 조건에 따라 X-선 회절 패턴의 (002)면의 세기는 상당한 차이를 나타냈다. O2 조건에서는 Ga doping이 이루어진 단일 박막의 경우에서는 강한 세기의 회절피크가 관찰되었다. O2 및 Ar 조건에서는 Ga doping이 이루어진 다층박막의 경우에서는 다소 약한 세기의 (002) 면의 피크만을 나타내었다. FE-SEM image에서는 박막의 표면입자의 크기는 두께가 증가함에 따라 입자크기가 다소 증가하는 것으로 관찰되었다. O2 및 Ar 분위기 조건 하에서, Ga doping이 이루어진 다층박막의 경우에서는, 비저항은 6.4 × 10-4Ω·cm을 나타냈고, O2 분위기 조건하에서, Ga doping이 이루어진 단일 박막의 경우에서는 저항값이 감소하였고, Ga-doped ZnO 박막의 두께가 2 ㎛로 증가하면서 저항이 감소하였으며, 1.0 × 10-3 Ω·cm의 비교적 낮은 비저항 값을 나타내었다.

• 한국전기전자재료학회논문지
• /
• 제17권12호
• /
• pp.1347-1351
• /
• 2004

The ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions as calcine and sintering temperature in order to deposit ZnGa$_2$O$_4$ Phosphor thin film by rf magnetron sputtering system. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target showed the position of (311) main peak. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor target showed main peak of 370 nm to 400 nm, and maximum intensity at the calcine temperature of $700^{\circ}C$ and sintering temperature of 130$0^{\circ}C$. It was possible to prepare The ZnGa$_2$O$_4$ phosphor thin film with synthesized ZnGa$_2$O$_4$ phosphor target and The prepared ZnGa$_2$O$_4$ phosphor thin film showed the position of (311) main peak.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.574-577
• /
• 2001

GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.477-480
• /
• 2004

Ga doped zinc oxide films (ZnO:Ga) were deposited on glass substrate by RF magnetron sputtering from a ZnO target mixed with $Ga_O_3$. The effects of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The structural and electrical properties of the film are highly affected by the variation of RF discharge power. The lowest electrical resistivity of $4.9{\times}10^{-4}\;\Omega-cm$ were obtained with the film deposited from 3 wt% of $Ga_2O_3$ doped target and at 200 W in RF discharge power. The transmittance of the 900 nm thin film was 91.7% in the visible waves. The effect of annealing on the as-deposited film was also studied to improve the electrical resistivity of the ZnO:Ga film.

• Transactions on Electrical and Electronic Materials
• /
• 제4권6호
• /
• pp.13-16
• /
• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.