• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.50-56
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• 2011

In this study, the effects of ZnO buffer layer thickness and annealing temperature on the heterojunction diode, ZnO/b-ZnO/p-Si(111), were reported. The effects of those on the structural and electrical properties of zinc oxide (ZnO) films on ZnO buffered p-Si (111) substrate were also studied. Structural properties of ZnO thin films were studied by X-ray diffraction and I-V characteristics were measured by a semiconductor parameter analyzer. ZnO thin films with 70 nm thick buffer layer and annealing temperature of $700^{\circ}C$ showed the best c-axis preferred orientation. The best electrical property was found at the condition of buffer layer annealing temperature of $700^{\circ}C$ and 50nm thick ZnO buffer layer (resistivity: $2.58{\times}10^{-4}[{\Omega}-cm]$, carrier concentration: $1.16{\times}1020[cm^{-3}]$). The I-V characteristics for ZnO/b-ZnO/p-Si(111) heterojunction diode were improved with increasing buffer layer thickness at buffer layer annealing temperature of $700^{\circ}C$.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.52-58
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• 2013

Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

• Journal of the Korean Society of Safety
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• v.20 no.4 s.72
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• pp.29-33
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• 2005

In this paper, reflectance and the dielectric characteristics for $P_2O_5-ZnO-BaO$ system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ and the reflectance of $P_2O_5-ZnO-BaO$ system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5-ZnO-BaO$ system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can be explained as the space charge effects. These results are could be applied to the under plate dielectrics of PDP required high reflective ratio and breakdown strength.

• Journal of the Korean Ceramic Society
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• v.50 no.1
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• pp.57-62
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• 2013

We investigated the thermal and electrical properties of the $B_2O_3-ZnO-Bi_2O_3$ glass system as a sealing material in sheath heater modules. A composition with over 90 wt% $Bi_2O_3$ in the $B_2O_3-ZnO-Bi_2O_3$ system was glassified by controlling the cooling rate. The glass transition temperature and thermal expansion coefficient in bismate glass could be controlled by the minor ingredients of ZnO, $SiO_2$, $BaO_2$, and $K_2O$. The $B_2O_3-ZnO-Bi_2O_3$ glass system bonded well to metal, and bismate glass insulating properties were comparable to those of bismate glass $B_2O_3-ZnO-PbO$ glass system in a sheath heater module.

• 전자공학회논문지 IE
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• v.43 no.4
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• pp.8-12
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• 2006

In this paper, reflectance and the dielectric characteristics for $P_2O_5$-ZnO-BaO system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ contents, and the reflectance of $P_2O_5$-ZnO-BaO system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5$-ZnO-BaO system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can explained as the space charge effects. These results are could be applied to the lower dielectrics layer of PDP required high reflective ratio and breakdown strength.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.17-22
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• 1998

B-doped ZnO thin films on glass substrates were prepared by sputtering the ceramic targets which had been prepared by sintering disks consisting of ZnO and various amounts of B2O3 While pure ZnO films show-ed a c-axis oriented growth the B-doping retarded the prefered orientation and grain growth of the film. Electron concentrations for undoped and B-doped ZnO films were on the order of 7.8${\times}$1018 cm-3 and 5${\times}${{{{ {10 }^{20 } }} c{{{{ {m }^{-3 } }} respectively. The electron mobility however decreased with the B-doping concentration. Optical meas-urements on the films showed that the average transmittance in the visible range was higher than 85% The measurements also indicated a blueshift of the absorption edge with doping.

• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.195-200
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• 2002

Low temperature sintering of Co$_2$Z type Ba ferrites with various oxide additives has been studied. Co$_2$Z phase was obtained by 2 step calcination and XRD peaks showed a good agreement with the peaks of the standard Co$_2$Z phase, except for some minor extra peaks. ZnO-B$_2$O$_3$ glass, ZnO-B$_2$O$_3$ and CuO, ZnO-B$_2$O$_3$ and Bi$_2$O$_3$, and ZnO-Bi$_2$O$_3$ glass were added to lower sintering temperatures. Specimens were sintered at the temperature range between 900 $^{\circ}C$ and 1000 $^{\circ}C$. In the single addition of ZnO-B$_2$O$_3$ glass, the specimen with 7.5 wt％ showed the highest shrinkage. Specimens with complex addition of ZnO-B$_2$O$_3$ glass with CuO or Bi$_2$O$_3$ showed higher shrinkages and initial permeabilities than single addition of ZnO-B$_2$O$_3$ glass. Shrinkages and initial permeabilities of the specimens with ZnO-Bi$_2$O$_3$ glass were higher than those of ZnO-B$_2$O$_3$ glass addition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.242-248
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• 2008

The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.356-361
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• 2015

$Cd_{0.5}Zn_{0.5}S/ZnO$ composite photocatalysts were synthesized using the precipitation method and characterized by XRD, UV-vis DRS, PL and FE-SEM. Photocatalytic activities of the materials were evaluated by measuring the degradation of rhodamine B under visible light irradiation. Contrary to ZnO, $Cd_{0.5}Zn_{0.5}S/ZnO$ materials absorb visible light as well as UV and their absorption intensities in visible region increased with increasing the $Cd_{0.5}Zn_{0.5}S$ amount. The increment in the $Cd_{0.5}Zn_{0.5}S$ content in $Cd_{0.5}Zn_{0.5}S/ZnO$ also leads to reducing the particle size and consequently increasing the specific surface area. $Cd_{0.5}Zn_{0.5}S/ZnO$ materials with the larger $Cd_{0.5}Zn_{0.5}S$ content showed the higher activity in the photocatalytic degradation of rhodamine B under visible light irradiation. Therefore, the heterojunction effect between $Cd_{0.5}Zn_{0.5}S$ and ZnO as well as the adsorption capacity seems to give important contributions to the photocatalytic activity of the $Cd_{0.5}Zn_{0.5}S/ZnO$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.265-265
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• 2007

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.