• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.447-447
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• 2009

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on Corning glass and silicon wafer substrate by RF magnetron sputtering method using an Al-doped ZnO target (Al: 2 wt.%) at room temperature as the thickness of 150 nm. We investigated the effects of the RF power between 100 Wand 350 W in steps of 50 W on structural, electrical and optical properties of AZO films. Also, we studied the effects of the working pressure (3, 4 and 5 mtorr) on that condition. The thickness and cross-sectional images of films were observed by field emission scanning electron microscopy (FE-SEM) and all of the films were kept to be constant to $150\pm10$ nm on Coming glass and silicon wafer. A grain size was calculated from X-ray diffraction (XRD) on using the Scherrer' equation and their electrical properties investigated hall effect electronic transport measurement system. Moreover, we measured transmittance of AZO films by UV/VIS spectrometer.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.296-296
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• 2010

In this work, we report the effect of substrate on the growth of Ga-doped ZnO (GZO) thin films. GZO thin films were deposited on various substrates by using pulsed laser deposition (PLD). The structural properties, surface morphologies, and electrical properties were investigated. From the results of HRXRD, c-plane (0002) oriented growth of GZO films was confirmed on $Al_2O_3$ (0001). On the other hand, the GZO films on LAO (100) substrates were grown along the a-axis. The obvious differences on the electrical properties of each film were also obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.115-118
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• 2017

Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.243-243
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• 2004

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• Korean Journal of Metals and Materials
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• v.46 no.4
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• pp.249-256
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• 2008

0.5 wt% Al doped ZnO thin films (AZO) were prepared on glass substrates using RF magnetron sputtering method. Thin films were grown at substrate temperature of $250^{\circ}C$, RF power of 75W, working pressure of 10 mTorr, by changing the $O_2/Ar$ pressure ratio from 0% to 16.7%. The effects of oxygen partial pressure during the deposition process on structural and optical properties of the films were investigated using XRD, SEM, AFM, EPMA and UV-visible spectroscopy. All the AZO thin films were grown as hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. The surface roughness and grain size of AZO films decreased with increasing oxygen ratio from 10.6 nm to 3.2 nm and 94.9 nm to 30.9 nm, respectively. On the other hand, the transmittance and band gap energy of the AZO films increased from 84.7% to 92.6% and 3.24 eV to 3.28 eV, respectively with increasing the $O_2/Ar$ pressure ratio.

• New & Renewable Energy
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• v.1 no.2 s.2
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• pp.6-10
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• 2005

[ $CulnSe2$ ]계 화합물은 직접천이형 반도체로 광흡수계수가 매우 높아 박막형 태양전지 제조에 매우 유리하다. 또한 화학적으로 안정하며 Ga, Al 등을 첨가하면 에너지 금지대폭을 조절할 수 있어 Wide Bandgap 태양전지 및 탠덤구조 태양전지를 제조하기에도 용이하다. CIS 물질에서 In을 $20-30\%$ 정도 치환한 $Cu(In,\;Ga)Se_2(CIGS)$ 태양전지의 경우 19.5%의 세계 최고 효율을 보고하고 있으며 이는 다결정 실리콘 태양전지의 효율과 비슷한 수준이다. 본 연구에서는 동시 질공증발법을 이용하여 증착한 CIGS 박막 및 $CuGaSe_2(CGS)$ 박막을 이용하여 태양전지를 제조하였다. 공정의 재현성 및 결정립계가 큰 광흡수층 제조를 위하여 실시간 기판 온도 모니터링 시스템을 도입하였으며 버퍼층으로는 용액성장한 CdS 박막을 사용하였다. SLG/MO/CIGS(CGS)/CdS/ZnO/Al 구조의 태양전지를 제조하여 면적 $0.5cm^2$에서 각각 $17\%(CIGS)$와 $7\%(CGS)$의 효율을 얻었다.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1424-1426
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• 1997

저전압 구동이 가능한 교류구동형 박막전기발광소자를 구현하기 위해 높은 유전상수를 가지며 특히 광학적 굴절률이 발광박막과 유사하여 광학적 특성 개선에도 효과적인 것으로 알려져 있는 $Ta_2O_5$를 제조하였다. $Ta_2O_5$박막은 rf-magnetron sputtering방법으로 형성하였으며 기판온도, working pressure, 박막의 두께에 따른 전기적인 특성을 조사하였다. 10mTorr에서 제조된 $Ta_2O_5$박막은 $22{\sim}26$의 비유전율을 보였고, 유전손실은 $0.007{\sim}0.03(1kHz{\sim}10kHz)$의 값을 보였다. $100^{\circ}C$에서 제조된 박막의 전하저장용량은 $7.9{\mu}C/cm^2$이었다. 제조된 박막의 항복전압은 인가 전압의 극성에 의존하며, 전류특성은 기판온도와 200nm와 300nm의 두께에서는 $V^{1.95}{\sim}V^{2.35}$에 비례하는 space charge limited current특성을 보였고, 400nm에서는 Poole Frenkel특성을 보였다. 이상의 결과로 TFEL소자에 응용에 적합한 $Ta_2O_3$ 박막은 $200^{\circ}C$에서 증착되고 200nm와 300nm인 것으로 나타났으며, 제조된 MIS구조(ITO-$Ta_2O_5$-ZnS-Al)의 ACTFEL소자에서의 전도전하는 각각 $13uC/cm^2$, $8.3uC/cm^2$로 조사되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.290-290
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• 2010

현재 세계적으로 화석연료의 고갈로 인해 신재생에너지에 대한 관심이 모아지고 있다. 그중에서 태양전지가 가장 주목을 받고 있으며 태양전지는 크게 무기와 유기 태양전지로 구분된다. 실리콘 및 화합물 반도체를 이용한 무기 태양전지는 높은 에너지 변환 효율을 보이고 있으나 생산단가가 높아 화석연료로부터 얻는 에너지에 비해 경제성이 떨어진다. 그중에서 유기 태양전지는 무기 태양전지의 효율에는 미치지 못하지만 제작공정의 비용이 낮고, 투명하고 다양한 색을 나타낼 수 있으며, 특히 유연성을 바탕으로 원하는 제품의 디자인을 구현 할 수 있는 장점을 가진다. Inverted 구조는 conventional 구조에 비해 Al과 같은 air-sensitive한 전극을 대체 할 수 있다는 장점을 가진다. 본 연구에서는 sol-gel상의 ZnO를 스핀코팅 방법으로 박막을 형성하여 inverted 구조 형태의 유무기 하이브리드 태양전지를 제작하였으며, ZnO 코팅 공정 조건 (두께, 열처리 온도)에 따른 태양전지의 특성변화(광 변환효율 및 수명 등)를 관측하였다. 최적화된 ZnO의 공정조건에서 제작된 하이브리드 태양전지는 3% 이상의 광 변환효율과 1000시간 이상의 반감 수명을 가지는 우수한 특성을 보였다.