• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.688-692
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• 2004

In this paper, zinc oxide (ZnO) films with c-axis (002) orientation have been successfully deposited on the Al/Si substrate by rf magnetron sputtering method. The deposited films were characterized by substate temperature. Physical and structural properties of the deposited films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurement. Electrical Properties of the deposited films were investigated by 4-poing probe and LCR meter measurement. The optimal condition in this experimental result was found at foot of the substrate temperature and shown good film quality for FBAR application.

• Korean Journal of Materials Research
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• v.20 no.10
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• pp.501-507
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• 2010

Changes in surface morphology and roughness of dc sputtered ZnO:Al/Ag back reflectors by varying the deposition temperature and their influence on the performance of flexible silicon thin film solar cells were systematically investigated. By increasing the deposition temperature from $25^{\circ}C$ to $500^{\circ}C$, the grain size of Ag thin films increased from 100 nm to 1000 nm and the grain size distribution became irregular, which resulted in an increment of surface roughness from 6.6 nm to 46.6 nm. Even after the 100 nm thick ZnO:Al film deposition, the surface morphology and roughness of the ZnO:Al/Ag double structured back reflectors were the same as those of the Ag layers, meaning that the ZnO:Al films were deposited conformally on the Ag films without unnecessary changes in the surfacefeatures. The diffused reflectance of the back reflectors improved significantly with the increasing grain size and surface roughness of the Ag films, and in particular, an enhanced diffused reflectance in the long wavelength over 800 nm was observed in the Ag back reflectors deposited at $500^{\circ}C$, which had an irregular grain size distribution of 200-1000 nm and large surface roughness. The improved light scattering properties on the rough ZnO:Al/Ag back reflector surfaces led to an increase of light trapping in the solar cells, and this resulted in a noticeable improvement in the $J_{sc}$ values from 9.94 mA/$cm^2$ for the flat Ag back reflector at $25^{\circ}C$ to 13.36 mA/$cm^2$ for the rough one at $500^{\circ}C$. A conversion efficiency of 7.60% ($V_{oc}$ = 0.93, $J_{sc}$ = 13.36 mA/$cm^2$, FF = 61%) was achieved in the flexible silicon thin film solar cells at this moment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.443-443
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• 2014

CIS 박막을 제조하기 위한 방법으로 셀렌화(selenization)방식, MOCVD방식, 동시진공증발(co-evaporation)방식, 전착(electrodeposition)방식 등이 있으나, 이러한 방식을 이용하여 CuInSe2 박막을 제조하는 경우 어떤 방법으로든 다원화합물의 조성 및 결정성을 조절하기가 매우 어려운 단점이 있었다. 기판의 온도를 일정 온도로 유지하도록 하고, 증발원을 가열하여 이에 내포된 물질(이원화합물 또는 단일원소)을 증발시켜 기판에 증착이 이루어지도록 하거나, 기판의 온도를 승온시키고 구리 이원화합물을 내포한 증발원을 가열해 물질을 증발시켜 기판에 증착이 이루어지도록 하는 방법으로 기판에 박막이 형성되도록 한다. 기판의 대면적화로 인해 균일한 박막의 형성이 어려워지고 있으며, 이중 15% 이상의 고효율을 보인 방법은 3-stage process를 이용한 동시진공증발방식으로, Cu, In, Ga, Se 등의 각 원소를 동시에 진공 증발시키면서 조성을 조절하여 태양전지에 적절한 전기적, 광학적 특성을 가지는 Cu(In,Ga)Se2 (CIGS)박막을 증착시키는 방법이다. 일반적으로, 실험실에서 연구되고 있는 장비의 구조는 증발원이 아래에 장착되어서 상향 증착되는 방식이다. 본 연구에서 사용된 장비는 하향 증발원이 측면에 장착되어서 하향 증착되는 방식으로 구성하였다. 증착되는 면방향으로, 적외선온도계(pyrometer)가 설치된 시창(viewport)의 오염 등으로 인하여, 지속적인 공정이 이루어지기 힘든 점을 개선하여 증착기판의 후면에 적외선 온도계를 설치하여 기판의 온도변화를 감지하여 공정에 반영할 수 있도록 하였다. 본 연구에서는 하향식 진공 증발원, 기판후면 온도모니터링모듈 등을 개발 장착하여, CIGS 박막을 제조하였으며, 버퍼층은 moving 스퍼터링법으로 ZnS를 증착하였고, 투명전극층은 PLD(Pulsed Laser Deposition)를 이용하여 제조하였다. 가장 높은 광변환효율을 보인 Al/ZnO/CdS/Mo/SLG박막시료는 유효면적 $0.45cm^2$에 광변환효율 15.65 %, Jsc : $33.59mA/cm^2$, Voc : 0.64 V, FF : 73.09 %를 얻을 수 있었으며, CdS를 ZnS로 대체한 Al/ZnO/ZnS/Mo/SLG박막시료는 유효면적 $0.45cm^2$에 광변환효율 12.45 %, Jsc : $33.62mA/cm^2$, Voc : 0.59 V, FF : 62.35 %를 얻을 수 있었다.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.120-121
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• 2007

In this paper, ZnO thin films were deposited by pulsed laser deposition (PLD) on $Al_2O_3$ (alumina) at room temperature in various $O_2$ ambient. Rapid thermal annealing (RTA) has been performed at temperatures from $400^{\circ}C$ to $700^{\circ}C$. The effects of temperature and ambient on the structural property of ZnO films were examined by x-ray diffractometer (XRD) and atomic force microscopy (AFM), respectively. The results show that the (002)-oriented ZnO thin films on non-single crystal alumina were obtained in over 30mTorr ambient at all RTA temperatures including room temperature. The foil-width half maximum (FWHM) of (002) peak decreases as the RTA temperature increases, which indicates that ZnO thin films with RTA have improved crystalline quality.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.256-256
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• 2010

투명전극부터 디스플레이 산업에 이르기까지 광범위하게 응용되어지고 있고 개발되어지고 있는 투명전도산화물(TCO)은 ZnO, In2O3, SnO2 등을 기본으로 하는 n-type 재료가 대부분이다. 그러나 투명전도 산화물을 이용한 light emitting diode(LED), 투명한 태양전지, p-형 TFT와 같은 투명전자소자의 개발을 위해서는 p-type 소재가 필수적이다. p-type TCO 소재는 비교적 연구 개발 실적이 매우 부진한 실정이었다. 1997년 넓은 밴드갭을 가지는 ABO2(delafossite) 산화물이 p-type으로서 안정적이라는 것을 보고함에 따라 이에 대한 연구가 활발히 진행되고 있다. 현재 ABO2 형태를 가진 Delafossite구조 산화물이 가장 유망한 p-type 투명전도체 소재로 거론되고 있다. Delafossite 구조가 p-type 투명전도체에 적합한 결정구조인 이유는 밴드갭이 넓고 공유결합에 유리하기 때문이다. Delafossite구조는 상온에서 2종류의 polytype(상온에서 Rhombohedaral구조와 hexagonal 구조)이 존재하며 이들은 각각 3R 및 2H의 결정 구조를 가지고 있다. ABO2의 delafossite구조에서 Cu+의 배열은 c-축을 따라 Cu-O-Cr-O-Cu의 연속적인 층 구조로서 2차원연결로 보여 진다. 보고된 Cu- base delafossite구조를 가지는 재료들은 CuAlO2, CuGaO2, CuInO2 등 여러가지가 있다. 본 연구에서는 PLD를 이용하여 c-plane 사파이어 기판위에 성장된 delafossite구조인 CuCrO2박막의 특성을 알아보았다. p-type 특성을 위하여 CuCrO2에 Zn를 첨가하였으며 그에 따른 구조적 전기적 특성을 조사하였다. 성장온도와 산소분압을 $500{\sim}700^{\circ}C$, 0~10mTorr로 변화시켜 특성을 연구하였다. 성장온도 $700^{\circ}C$, 산소분압 10mTorr에서 c-plane 사파이어 기판위에 c-축 배향의 에피성장된 CuCrO2:Zn 박막을 얻을 수 있었다. Mg를 도핑함에 따른 p-type 특성보다 현저히 떨어지는 것을 확인하였다. 또한 동일한 조건임에도 특정한 이차상의 존재를 통해 도핑된 Zn의 위치를 추측할 수 있었다. 온도와 분압에 따른 결정성과 표면상태를 SEM을 통해서 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.279-283
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• 2016

In this study, we intended to achieve both antibacterial properties and electromagnetic shielding using the Al-doped ZnO (AZO) films. FTS (Facial Target Sputtering) magnetron sputtering was used for the AZO thin films instead of the conventional RF sputtering because the FTS sputtering could avoid the damage for the plasma as well as fabrication of thin films with a high quality. The 300-nm thick AZO thin films grown on glass substrate showed a resistivity of about $7{\times}10^{-4}{\Omega}-cm$ and a transmittance of about 90% at a wavelength of 550 nm. AZO thin films were investigated for the electromagnetic shielding effectiveness measured by 2-port network method at 1.5 ~ 3 GHz. The AZO (300 nm)/glass films showed an EMI shielding effectiveness of approximately 27 dB. An antibacterial effect was measured by the film attachment method (JIS Z 2801). The percent reductions of bacteria by AZO films were 99.99668% and 99.99999% against Staphylococcus aureus and Escherichia coli, respectively.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.19-24
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• 2006

ZnO:Al(AZO) films prepared by rf magnetron sputtering on glass substrate and textured by post-deposition chemical etching were applied as front contact and back reflectors for ${\mu}c$-Si:H thin film solar cells. For the front transparent electrode contact, AZO films were prepared at various working pressures and substrate temperature and then were chemically etched in diluted HCl(1%). The front AZO films deposited at low working pressure(1 mTorr) and low temperature ($240^{\circ}C$) exhibited uniform and high transmittance ($\geq$80%) and excellent electrical properties. The solar cells were optimized in terms of optical and electrical properties to demonstrate a high short-circuit current.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.77-81
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• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.