• 대한화장품학회지
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• 제23권3호
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• pp.134-146
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• 1997

Consumers have recently preferred to purchase extensive UV intercepting products, which are waterproof and free from side effects on skin. Testing Cytoroxicity in SR method, cell survivial ratio of UV-B interceptors decreased above 0.08W/V%, and so did that of UV-A interceptors above 0.06W/V%. Also, Patch-test of inorganic UV interceptors resulted in no skin irritation even below 10.0 and 11.25. UV interceptors in the sunlight showed yellowish discoloration in 5 to 14 days. In absorption curves, UV-B was most suitable for Octyl methoxycinnamate and UV-A for Butyl methoxy dibenzoylmethane. Fro this reason, Nylonpoly UVA/UVB the material of OMC and BMDM coated with Nylon & polyethylene, was used as the organic UV interceptor. And zinc oxide and titanium dioxide was used as inorganic UV ibterceptors. The appropriate mixture ratio of ZnO and TiO2 was 6 to 4.6% of ZnO, 4% of TiO2 and 5% of Nylonpoly UVA/UVB were all combined with our sunscreen cream. The SPF value of in-vivo applied to a guinea pig was 34.9 and that of in-vivo was 38.5. Cyclomerhicone and dimerthicone were used in water-in-Silicone system. Ceryl diverhicone and sorbitan sesquioleate were used as emulsifiers and MgSO4, 7H2O, Mg-stearate/Mg-Al-stearate copolymer as emulsification stabilizers. In practical application, each SPF duration of O/W type and W/S type containing sunscreen cream of the same content showed that W/S type of sunscreen cream was 5 times as durable as the other. This product is fit for using in swimming, climbing or skiing. This research is to minimize skin trouble used by UV interceptors and to make one with proper softness, skin safety and UV intercepting efficiency.

• 청정기술
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• 제28권4호
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• pp.285-292
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• 2022

대기 오염의 주요 원인인 휘발성유기화합물(VOCs)의 배출을 저감 하기 위한 방법으로 주로 활성탄 흡착탑이 활용되고 있다. 하지만 활성탄의 짧은 수명과 잦은 교체 주기의 단점이 있어 이를 극복하기 위한 다양한 기술이 개발되고 있으며, 광촉매-활성탄 복합체는 이러한 활성탄의 단점을 극복할 수 있는 방법임을 입증하였다. 광촉매-활성탄 복합체는 활성탄 표면에 금속산화물 광촉매를 코팅하여 광촉매 효과와 활성탄의 흡착능력 효과를 동시에 확보할 수 있는 휘발성유기화합물 저감 물질이다. 미세유체공정을 이용하여 ZnO, 은(Ag) 나노입자를 동시에 합성한 후 실시간으로 ZnO와 은(Ag) 나노입자 용액을 활성탄이 채워진 충진층 반응기에 주입하여 Ag-ZnO 활성탄 복합체를 합성하였다. 합성 반응시간에 따른 광촉매 복합체의 증착양을 분석했으며, 다양한 분석 방법을 통해 광촉매가 활성탄의 기공을 막지 않고 활성탄 표면에 선택적으로 증착 되었음을 확인하였다. 톨루엔 가스백 시험과 흡착 파괴시간 시험을 통해 광촉매-활성탄 복합체가 순수한 활성탄보다 우수한 저감 효과와 지속성을 가지는 것을 확인하였다. 본 연구를 통해 개발된 공정은 광촉매-활성탄 복합체를 효율적으로 생산할 수 있는 방법으로 대량 생산을 위한 스케일 업 공정을 통해 국내의 VOCs 저감 물질 가격 경쟁력을 높일 수 있을 것으로 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.216-220
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• 2018

The piezoelectric properties of $0.65Pb(Zr_{1-x}Ti_x)O_3-0.35Pb(Zn_{1/6}Ni_{1/6}Nb_{2/3})O_3$ ($PZT_x-PZNN$) ceramics with $0.530{\leq}x{\leq}0.555$ were investigated for application to piezoelectric energy harvesters. Although a morphotropic phase boundary (MPB) was found at approximately x = 0.545, the ceramic with the highest figure of merit (FOM) ($d_{33}{\times}g_{33}$) was observed at a composition of x = 0.540. Values of this figure of merit, $d_{33}{\times}g_{33}$, of $19.6pm^2/N$ and $20.2pm^2/N$ were obtained from $PZT_{0.540}-PZNN$ ceramics sintered at $920^{\circ}C$ and $950^{\circ}C$, respectively. A high output power of $937{\mu}W$ and a high power density of $3.3mW/cm^3$ were obtained from unimorph-type piezoelectric energy harvesters fabricated using $PZT_{0.540}-PZNN$ ceramic sintered at $920^{\circ}C$ for 4h.

• E2M - 전기 전자와 첨단 소재
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• 제3권4호
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• pp.339-346
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• 1990

미소변위소자에 적합한 전왜세라믹스를 제조하기 위하여 0.85Pb(Zn$_{1}$3-x/MgxNb$_{2}$3/) $O_{3}$-0.10BaTi $O_{3}$-0.05PbTi $O_{3}$조성으로 Mg(mol%)를 변화시키면서 시편을 제조하고 구조적, 유전적, 전기적 특성 및 온도 안정성을 관찰하였다. 큐리온도는 Mg(mol%)가 증가함에 따라 감소하였고 Mg(mol%)가 0.15일 때 유전상수가 가장 높았으며 완만도는 -3.9, 산만도.DELTA.Tc는 21로 가장 컸다. 전계에 따른 유전상수는 감소하였고 Mg(mol%)가 증가할수록 압전정수 d$_{31}$은 감소하였으나 0.05, 0.10, 0.15일 때는 거의 일정하였다. Mg(mol%)가 0.15까지 증가함에 따라 전왜정수 Q$_{31}$은 감소하였고 그 이상에서는 Mg(mol%)가 1/3일때 가장 컸으며 ES-1시편에서의 AC 60(Hz), 11(kV/cm) 전계(electric field)에 의한 왜형을 253*$10^{-6}$을 나타냈다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.391-394
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• 1998

Electroluminescence is the light emission obtained by an electrical excitation energy passing through a phosphor under an applied high electrical field. EL are paid much attention on flat panel display as a backlight and indicator, which are divided into ACPRL(alternating-current powder electroluminescent) and ACTFEL(alternating-current powder electroluminescent). In this paper, Electric and emission properties on ACPEL are investigated based on ZnS:Cu phosphor. The basic structure on this is ITO glass/phosphor/insulator/ backelectrode, CR-M which has high efficiency on thermal properties and dielectric Properties was introduced and BaTiO$_3$ as a insulating layer in order to increase app1ied electric field on phosphor. Changing on Dielectric and emission Properties was caused by a different viscosity of binder which filled on space between phosphor particle. 60cd/$m^2$ under 60V, 2kHz sinusoidal was gotten from ACPELD prepared in this work.

• 센서학회지
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• 제8권1호
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• pp.10-15
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• 1999

ZnS 형광체와 BST 강유전체 박막을 절연층으로 사용한 백색방출 전계발광소자를 제작하였다. BST 박막의 제조조건으로 target의 조성비가 $Ba_{0.5}Sr_{0.5}TiO_3$이며, 기판온도가 $400^{\circ}C$, 분위기압이 30 mTorr, A:$O_2$의 비가 9:1일때 유전율이 1 kHz의 주파수에서 209를 나타내었다. 형광층으로 ZnS:Mn, ZnS:Tb 및 ZnS:Ag를 사용하였으며, 활성제 각각의 첨가량은 0.8, 0.8 및 1 wt%로 하였다. 형광층 전체의 두께가 500 nm로 하고 하부 절연층을 200 nm, 상부절연층을 400 nm로 증착하였을 때, 박막 전계발광소자의 발광문턱전압은 약 95 V 였고, 최고휘도는 150 V에서 약 $3000\;cd/m^2$이었다. 발광스펙트럼를 관찰한 결과 청색영역(450 nm), 녹색영역(550 nm) 그리고 적색영역(600 nm)의 파장에서 각각의 피이크가 나타나는 것을 관찰하였다.

• 동아시아식생활학회지
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• 제10권6호
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• pp.507-513
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• 2000

This study was conducted to investigate the shelf life of beef stored in antimicrobial pottery during 12days storage at 4'C and Five kinds of antimicrobial potteries were prepared with antimicrobial materials such as TiO$_2$, Ag (NO$_3$)$_2$, Cu(NO$_3$)$_2$ and Zn(NO$_3$)$_2$. In changes of color during storage, Hunter's L- and b-value of beef were not changed, but Hunter's a-value was low significantly. The pH of beef meats were low at 6 days, but were added from 6 days. TBA value of beef in "A" pottery containing TiO$_2$ 1% and "C" Pottery containing TiO$_2$ 0.5%, Cu(NO$_3$)$_2$ were lower than "B", "D" and "I" pottery. VBN contents of beef in "A", "B", "C", "D" and "I" Pottery stored during 12 days were 9.8, 12.5, 9.3, 11.9 and 13.7mg%, respectively. In changes of total plate count of beef during storage at 4$^{\circ}C$, the antimicrobial activity of "A" and "C" pottery were superior.g storage at 4$^{\circ}C$, the antimicrobial activity of "A" and "C" pottery were superior.ttery were superior.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.755-759
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• 2008

For the development of a new white dielectric layer in plasma display panel, different $TiO_2$ types as a filler was add to the $Bi_2O_3$-BaO-ZnO glass matrix. The reflectance and dielectric constant of dielectric have been investigated as a function of the mixing content (rutile and anatase), and sintering temperature. The reflectance of dielectric sintered at the 520$^{\circ}C$ appeared most highly and suitable in terms of the adhesion and reflectance of the soda-lime glasses. Also, the thermal expansion coefficient of dielectric was found to be $85.6\times10^{-7}/K$, which was similar to that of the soda-lime glasses. Especially, the dielectric constants were not increased with increasing of $TiO_2$ filler contents.

• 한국세라믹학회지
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• 제43권11호
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• pp.680-687
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• 2006

An overview is given to optimize the solid state processes toward phase pure and well-crystallized fine particulates of mixed oxides, serving as electroceramic materials in various genres. Elevation of the reactivity and preservation of stoichiometry of the starting mixture are of universal importance. Mechanical activation is versatile for these purposes, particularly when an oxygen atom as a hinge promotes formation of hetero-bridging bonds between dissimilar cationic species prior to calcination. Case studies carried out recently in the author's laboratory are displayed and compared for ferroelectric materials, i.e. $PbMg_{1/3}Nb_{2/3}O_3$ $xPbTiO_3$(PMN-PT), $(1-y)Pb(Zn_xMg{1-x})_{1/3}$ $yNb_{2/3}O_3$ (PZN-PMN), $BaBi_2Ta_2O_9$ (BBT), $Ba(Mg_{1/3}Ta_{2/3})O_3$ (BMT), and ferromagnetics, i.e. M-, Y-, and Z-phases of Ba-hexaferrites.