• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.343-343
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• 2011

ZnO has been introduced as one of the good candidates for next generation opto-electronics. Recently, ZnO is known to be suitable for the transparent electrode in organic solar cells and light emitting devices. The contact with n-type organic material has been studied due to the n-type properties of ZnO. However, the surface of ZnO has shown different electronic property with respect to its surface orientation. Therefore, it is presumed that there are differences in the interfacial electronic structures between organic materials and ZnO with different orientation. Therefore, it is required to classify the interfacial electronic structures according to the surface orientation of ZnO. In this study, we measured the interfacial electronic structures between the ZnO substrate having various orientations and a typical n-type organic material, tris-(8-hydroxyquinoline) aluminum (Alq3). In-situ x-ray and ultraviolet photoelectron spectroscopy measurements revealed the interfacial electronic structures. We found the changes in the electronic structures with respect to the orientation of ZnO substrate and it could be used to improve the contact between ZnO and Alq3.

• 한국세라믹학회지
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• 제48권3호
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• pp.251-256
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• 2011

The luminescence properties of polycrystalline ZnO annealed in reducing ambience ($H_2/N_2$) have been studied. An effective quenching of green luminescence with enhanced UV emission from polycrystalline ZnO is observed for the reduced ZnO. The variations of the UV and green luminescence band upon reduction treatment are investigated as a function of temperature in the range between 20 and 300 K. Upon annealing treatment in reducing ambience, the optical quality of polycrystalline ZnO is improved. The UV to green intensity ratio of sintered ZnO approaches close to zero (~0.05). However, this ratio reaches more than 13 at room temperature for polycrystalline ZnO annealed at $800^{\circ}C$ in reducing ambience. Furthermore, the full width at half maximum (FWHM) of the UV band of polycrystalline ZnO is reduced compared to unannealed polycrystalline ZnO. Electron paramagnetic resonance (EPR) measurements clearly show that there is no direct correlation between the green luminescence and oxygen vacancy concentration for reduced polycrystalline ZnO.

• 한국자기학회지
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• 제25권5호
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• pp.156-161
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• 2015

이 연구에서는 X-선 광전자분광법(X-ray photoemission spectroscopy: XPS)을 이용하여 염료감응 태양전지의 전극용 후보 물질에 속하는 $ZnSnO_3$와 $Zn_2SnO_4$의 전자 구조를 연구하였다. 제조된 시료들에 대한 X-선 회절 측정에 의하면 $ZnSnO_3$와 $Zn_2SnO_4$ 시료는 각각 단일상의 ilmenite(IL) 구조와 역스피넬(inverse spinel) 구조를 가지고 있음을 알 수 있었다. Zn 2p와 Sn 3d 내각준위 XPS 측정으로부터 $ZnSnO_3$와 $Zn_2SnO_4$ 두 시료 모두에서 Zn 이온은 2가 (Zn 2+) 상태이며, Sn 이온은 4가 (Sn 4+) 상태임을 알 수 있었다. 한편 얕은 내각준위 XPS 스펙트럼의 측정에서는 $ZnSnO_3$의 Sn 4d와 Zn 3d 내각 준위들의 결합에너지가 $Zn_2SnO_4$에서 보다 다소 작게 관찰되었다. 이 연구로부터 $ZnSnO_3$와 $Zn_2SnO_4$에서의 각 이온의 원자가 상태와 화학적 결합 상태에 대한 정보를 얻을 수 있었다.

• 멤브레인
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• 제26권6호
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• pp.463-469
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• 2016

Polyethersulfone (PES) 고분자 상변환막의 성능을 향상시키기 위해 PES 고분자에 나노 크기의 ZnO 무기입자를 함침시킨 혼합기질막(mixed matrix membrane)을 제조하고 특성을 평가하였다. PES-ZnO 혼합기질막은 ZnO 나노입자를 PES 대비 최대 0.375 wt%의 낮은 비율로 첨가시킨 PES-ZnO-NMP(N-methyl-1-pyrrolidone)로 이루어진 캐스팅 용액을 사용하여 상변환법을 통해 제조하였다. 제조된 혼합기질 막의 물성과 특성은 막의 단면구조 관찰, 접촉각 측정, 인장강도 측정, 순수 투과량 측정 및 BSA 단백질 용액의 한외여과 실험을 통해 평가하였다. 이 결과 혼합기질 막은 PES 고분자 matrix에 함유된 ZnO 나노입자로 인해 막의 친수성이 증가하여 막오염 발생이 억제되어 투과량이 증가하였다. ZnO 나노입자는 혼합기질막의 제조에 있어 막오염의 발생 억제와 투과량 증가에 유용하게 사용될 수 있는 무기물 첨가제임을 알 수 있다.

• 한국세라믹학회지
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• 제38권12호
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• pp.1093-1096
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• 2001

ZnO내 $Al_2$ $O_3$의 고용은 $Al^{3+}$ 의 ZnO 결정의 $Zn^{2+}$자리, 즉 wurtizite 구조에서 4개의 산소가 만드는 4면체 공간자리로서 치환반응으로 정의될 수 있다. 이 반응은 아연-빈자리 혹은 산소-빈자리와 연관되어 일어나므로 ZnO의 비화학량론성 및 결정결함반응들과 상관관계를 가진다. 이러한 상호연관성은 아연-빈자리 및 산소분압(P $o_2$) 의존성을 낳으며, 결과적으로 ZnO내 Al 용해도([Al/sug zn/]$_{max}$)의 산소분압 의존성을 야기한다. 본 논문은 ZnO내에 Al의 용해도는 산소분압이 증가하면 감소한다는 것을 처음으로 곗나하여 보고한다. [A $l_{zn}$ ]$_{max}$ $P_{o2}$$^{-1}$4/./.

• Asian-Australasian Journal of Animal Sciences
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• 제33권6호
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• pp.992-1001
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• 2020

Objective: This study was conducted to investigate the effects of hot-melt extruded ZnO nano-particles (HME-ZnO) as an alternative for P-ZnO on growth performance, nutrient digestibility, Zn bioavailability, intestinal microbiota, and intestinal morphology of weanling pigs. Methods: A total of 450 piglets (Landrace×Yorkshire×Duroc) were randomly allotted to five treatments based on initial body weight and sex. The experimental diets were fed in a meal form as phase 1 from d 0 to 14 and phase 2 from d 15 to 28. Treatments were the control diet without ZnO supplementation, the diet containing 2,500 ppm Zn as ZnO, and three diets containing 500, 1,000, or 2,500 ppm Zn as HME-ZnO. Results: The overall result showed a higher (p<0.01) average daily gain in weanling pigs fed ZnO-supplemented diets in comparison to the control diet. There was a decrease (p<0.01) in fecal score in the ZnO-supplemented diets. Dietary supplementation of ZnO improved (p<0.05) crude protein digestibility. The weanling pigs fed the P-ZnO diet had a lower (p<0.01) Zn digestibility in the feces than HME-ZnO supplemented treatments. Weanling pigs fed diets supplemented with ZnO had greater (p<0.05) Lactobacillus spp. populations and lower Clostridium spp. (p<0.05) and Coliforms (p<0.01) populations in the ileum. Weanling pigs fed diets supplemented with increasing concentrations of HME-ZnO linearly decreased Clostridium spp. (p<0.05) and Coliforms (p<0.01) in the ileum. Lower (p<0.05) Clostridium spp. and Coliforms counts in the colon were observed in pigs fed with ZnO-supplemented diets. Weanling pigs fed diets supplemented with ZnO showed a greater (p<0.01) villus height in the duodenum. Conclusion: Dietary supplementation of HME-ZnO and P-ZnO showed a potential to improve the digestibility of protein, intestinal Coliform and Clostridium, villus height in duodenum and ileum. Moreover, HME-ZnO showed a higher Zn digestibility compared with P-ZnO.

• 대한화학회지
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• 제39권3호
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• pp.176-185
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• 1995

ZnO/$H_2Pc(I)_x$계의 광증감성 효율을 높이기 위하여 ZnO/$H_2Pc(I)_$x를 광전도성 고분자인 poly(9-vinylcarbazole)(PVCZ)에 분산시켰다. $H_2Pc$ 결정형에 따른 ZnO/$H_2Pc(I)_x$계의 요오드 도핑 함량(x)은 ZnO/${\chi}-H_2 Pc(I)_x$ 경우는 요오드의 농도가 증가할수록 x값이 증가하였고, ZnO/${\beta}-H_2Pc(I)_x$ 경우는 약 x=0.95인 요오드 농도가 $6.3{\times}10^{-3}\;M$ 이후에서는 오히려 x값이 감소되었다. 514.5 nm로 여기시킨 ZnO/${\beta}-H_2Pc(I)_x$계의 라만 스펙트럼에서 x값이 약 0.57에서부터 $I_3^-$ chain에 대한 특성 피크가 50~550 $cm^{-1}$에서 나타나기 시작하였다. ZnO/{\chi}-H_2Pc(I)_{0.48}$/PVCZ의 광증감 효과는 ZnO/${\chi}-H_2Pc(I)_{0.48}보다 1.6배, ZnO/${\beta}-H_2Pc(I)_{0.57}$/PVCZ보다 1.8배 크게 나타났다. 그리고 ZnO/$H_2Pc(I)_x$/PVCZ계에서 x값이 증가될수록 광중감 효과도 크게 증가되었다. 그러므로 $H_2Pc$의 광여기로 생성된 정공이 PVCZ으로 주입되어 ZnO/$H_2Pc(I)_x$/PVCZ계의 광증감 효과가 ZnO/$H_2Pc(I)_x$계의 광중감 효과보다 향상되는 것으로 판단된다.

• 한국세라믹학회지
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• 제19권4호
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• pp.287-292
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• 1982

Nonohmic properties of ZnO ceramics with various small amounts of additives were studied in relation to experimental methods, additive contant and sintaring temperature. The kinds of additives used to following chemicals were basic additives ($0.5Bi_2O_3$, $0.3BaCO_3$, $0.5MnCO_3$, $0.5Cr_2O_3$, $0.1KNO_3$), $TiO_2$ and $Al(OH)_3$. Expecially, this study has focused on the effectsof $TiO_2$ and $Al(OH)_3$ in ZnO ceramics with the basic additives. SEM studies indicated that the addition of TiO2 promoted grain growth but retarded grain growth with the addition of $Al(OH)_3$. Also, in the case of calcination of ZnO with $TiO_2$ and ZnO with $Al(OH)_3$ previously, grain size of ZnO with $TiO_2$ was larger and that of ZnO with Al(OH)3 was smaller in comparison to the case with out calcination. From the viewpoint of nonohmic exponent and nonohimic resistance, electrical characteristics of ZnO, $TiO_2$ and the basic additives was more effective than that of ZnO, $Al(OH)_3$ and the basic additives. Nonohmic exponent and nonohmic resistance of ZnO, $TiO_2$ and the basic additives was 11-13 and 40-65 respectively.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• 한국세라믹학회지
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• 제32권1호
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• pp.106-112
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• 1995

In order to examine the effect of CuO and Al2O3 addition on the electrical conductivity of ZnO, both Al2O3 (0, 1, 2, 5, 10at.%) and CuO (1, 5at.%) were added to ZnO. Al2O3 addition (~2at.% Al) increased the total electrical conductivity of ZnO which was already decreased by CuO doping effect Above solid solubility of Al (~2at.%), ZnAl2O4 formed and the total electrical conductivity decreased due to the decrease of sintered density. Impedance measurements were used to know the reason and degree of contribution of three resistive elements, ZnO grain, ZnO/CuO, and ZnO/ZnO grain boundaries, to the total electrical conductivity changed.