• 전기의세계
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• 제30권3호
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• pp.140-145
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• 1981

본고의 내용은 다음과 같다. 1. ZnO Varistor의 전기적 특성 2. ZnO Varistor의 이용방법 3. ZnO Varistor의 장점과 문제점

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1689-1691
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• 1999

The conduction characteristics of $Pr_6O_{11}$-based ZnO varistor were investigated. ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistor were sintered at $1300^{\circ}C$ and $1350^{\circ}C$ in the addition range $0.0\sim2.0mol%$ $Sm_2O_3$, respectively. ZnO varistors which are added with 1.0mol% at each temperature exhibited best excellent conduction characteristics, namely the nonlinear exponent was 42.05 at $1300^{\circ}C$, 36.79 at $1350^{\circ}C$ and leakage current was $9.16{\mu}A$ at $1300^{\circ}C$, $11.7{\mu}A$ at $1350^{\circ}C$. Consequently, it is estimated that ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistors, which $Sm_2O_3$ is added 1.0mol% is to be used as a basic composition of $Pr_6O_{11}$-based ZnO varistors.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.369-372
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• 2000

ZnO varistor is studied to sintering condition and mixing condition for the improvement to non linear of electrical characteristics. In this paper, ZnO varistor, ZnO-Bi$_2$O$_3$-Y$_2$O$_3$-MnO-Cr$_2$O$_3$-Sb$_2$O$_3$series, is fabricated with Sb$_2$O$_3$mol ratio(0.5~4[mol%]) and sintered at 1250[$^{\circ}C$] for 2 hours. The grain size to Sb$_2$O$_3$moi ratio was measured by fractal mathematics. The ZnO varistors that Sb$_2$O$_3$mot ratio is 1[mol%] were shown small grain size because of spinel phase. The fractal dimension were increased with increasing of Sb$_2$O$_3$mo ratios. The capacitance of ZnO varistors with increasing of Sb$_2$O$_3$additive in voltage-capacitance characteristics was decreased by small grain size.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.270.1-270.1
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• 2013

Zinc oxide (ZnO) is one of the most powerful materials for purifying organic pollutants using photocatalytic activity. In this study, we have introduced a novel method to design highly photoreactive flexible 3 dimensional (3D) ZnO nanocomposite [F-ZnO-m (m: reaction time, min)] by electrospinning and simple-step ZnO growth processing (one-step ZnO seed coating/growth processing). Significantly, the F-ZnO-m could be a new platform (or candidate) as a photocatalytic technology for both morphology control and largearea production. The highest photocatalytic degradation rate ([k]) was observed for F-ZnO-m at 2.552 h-1, which was 8.1 times higher than that of ZnO nanoparticles (NPs; [k] = 0.316 h-1). The enhanced photocatalytic activity of F-ZnO-m may be attributed to factors such as large surface area. The F-ZnO-m is highly recyclable and retained 98.6% of the initial decolorization rate after fifteen cycles. Interestingly, the F-ZnO-m samples show very strong antibacterial properties against both Gram-negative Escherichia coli (E. coli) and Gram-positive Staphylococcus aureus (S. aureus) after exposure to UV-light for 30 min. The antibacterial properties of F-ZnO-m samples are more effective than those of ZnO NPs. More than 96.6% of the E. coli is sterilized after ten cycles. These results indicate that F-ZnO-m samples might have utility in several promising applications such as highly efficient water/air treatment and inactivation of pathogenic microorganisms.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.402-410
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• 2000

The electrical properties and stability of Pr$_{6}$/O$_{11}$-based ZnO wvaristors consisting of ZnO-Pr$_{6}$/O$_{11}$-CoO-Dy$_{2}$/O$_{3}$ based ceramics were investigated in the Dy$_{2}$/O$_{3}$ additive content range o 0.0 to 2.0 mol%. The density was nearly constant 5.62 g/cm$^3$corresponding to 97% of theoretical density as Dy$_{2}$/O$_{3}$ additive content increases up to 0.5 mol%. However the density decreased as Dy$_{2}$/O sub 3/ additive content is further additive content. Pr$_{6}$/O$_{11}$-based ZnO varistors doped with 0.5mol% Dy$_{2}$/O$_{3}$ exhibited a good nonlinearity, which is 37.76 in the nonlinear exponent and 5.36 $mutextrm{A}$ in the leakage current. And they exhibited very stress (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h). Consequently it was estimated that ZnO-0.5 mol% Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Dy$_{2}$/O$_{3}$ based ceramics will be sufficiently used as a basic composition to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors in the future.he future.uture.he future.

• 한국진공학회지
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• 제18권5호
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• pp.394-401
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• 2009

본 논문은 ZnO 분말 타겟을 스퍼터링하여 glass 기판 위에 증착한 ZnO 박막의 구조적, 광학적 특성을 보고한다. 소결된 ZnO ceramic target을 사용하는 보통의 radio-frequency magnetron sputtering과 달리 본 연구에서는 전처리과정이 필요하지 않은 ZnO 분말 target을 사용하였다. ZnO 박막은 wurtzite (0002) 우선배향면으로 성장하였다. 초기의 ZnO 박막은 매우 평평한 층구조로 증착되었고, 두께가 증가함에 따라 섬구조로 전이하였다. 400-1000 nm 광원에 대하여 평균 88% 이상의 광투과도를 나타내었으며, 220 nm 시편의 경우, 3.23 eV의 near bandedge emission 흡수단을 측정하였다.

• 조명전기설비학회논문지
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• 제23권4호
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• pp.79-85
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• 2009

이 논문은 피임펄스전류의 입사에 따른 ZnO 피뢰기의 열화 특성에 대하여 기술하였다. 뇌서지에 의한 ZnO 피뢰기의 열화특성을 분석하기 위해 시료 ZnO 피뢰기에 8/20[${\mu}s$], 2.5[kA]의 표준뇌임펄스전류를 인가하였다. 뇌임펄스전류를 인가한 것과 인가하지 않은 ZnO 피뢰기에 흐르는 상용주파수 AC 및 DC 누설전류를 측정하였다. 그 결과 임펄스전류의 인가횟수가 증가함에 따라 누설전류는 증가하였고 AC전압에서 누설전류의 비 대칭성은 뚜렷하게 나타났다. 뇌임펄스전류를 인가하지 않은 ZnO 피뢰기의 ZnO 입자는 균일한데 반해 뇌임펄스전류를 인가한 ZnO 피뢰기의 ZnO 입자는 불균일하게 변형되었다. 또한 뇌임펄스전류 인가에 따른 $Bi_2O_3$의 감소가 입계층의 결핍을 발생시키며 입계층의 결핍에 의한 전류의 집중이 ZnO 피뢰기 소자의 비선형 특성의 열화에 대한 중요한 요인으로 작용한 것으로 밝혀졌다.

• 마이크로전자및패키징학회지
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• 제30권4호
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• pp.79-85
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• 2023

(1-4x)Bi_1.5Zn_1.0Nb_1.5O₇-3xBi₂Zn_2/3Nb_4/3O₇-2xLiZnNbO₄(x=0.03-0.21) 조성의 새로운 저온 동시 소성 세라믹(LTCC) 유전체는 Bi_1.5Zn_1.0Nb_1.5O₇-xLi₂CO₃(x=0.03-0.21) 혼합물을 850℃~920℃에서 4 시간 반응성 액상소결(reactive liquid phase sintering)을 하여 제조하였다. 소결이 진행되는 동안 Li₂CO₃는 Bi_1.5Zn_1.0Nb_1.5O₇과 반응하여 Bi₂Zn_2/3Nb_4/3O₇과 LiZnNbO₄를 생성하였고 얻어진 소결체의 상대 소결밀도는 이론 밀도의 96% 이상이었다. 초기 Li₂CO₃ 함량(x)을 조절하여 최종 소결체내에 존재하는 Bi_1.5Zn_1.0Nb_1.5O₇, Bi₂Zn_2/3Nb_4/3O₇ 및 LiZnNbO₄ 상의 상대적인 함량을 제어함으로써 높은 유전율(ε_r), 낮은 유전손실(tan δ) 및 NP0 특성(TCε ≤ ±30 ppm/℃)의 유전율 온도계수(TCε)를 갖는 유전체를 개발할 수 있었다. Li₂CO₃의 첨가가 x=0.03 mol에서 x=0.15 mol로 증가함에 따라 얻어진 복합체 내의 Bi₂Zn_2/3Nb_4/3O₇와 LiZnNbO₄의 부피 분율은 증가하였고, Bi_1.5Zn_1.0Nb_1.5O₇의 부피 분율은 감소하였다. 그 결과 복합체의 유전율(ε_r)은 148.38에서 126.99로 유전손실(tan δ)은 5.29×10^-4에서 3.31×10^-4로 그리고 유전율 온도계수(TCε)는 -340.35 ppm/℃에서 299.67 ppm/℃로 변화되었다. NP0 특성을 갖는 유전체는 Li₂CO₃의 함량이 x=0.09일 때 얻을 수 있었고, 이 때의 유전율(ε_r)은 143.06, 유전손실(tan δ)값은 4.31×10^-4, 그리고 유전율 온도계수(TCε)값은 -9.98 ppm/℃ 이었다. Ag전극과의 화학적 호환성 실험은 개발된 복합 재료는 Ag 전극과 동시 소성 과정에서 전극과 반응이 없음을 보여주었다.

• 한국세라믹학회지
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• 제27권6호
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• pp.713-720
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• 1990

The effects of substituting Zn+2 for Ni+2 ion on dielectric and piezoelectric prooperties of Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-PZT ceramics were investigated. With increasing Zn2+ contents the tetragonality was appreciably enhanced and the grain size decreased. Both Curie temperature and thermal stability were increased with increase in Zn2+ contents since the Zn+2 partial substition for Ni+2 could form solid solution in almost range of the composition investigated. Piezoelectric prooperties showed the maximum($\varepsilon$ T/$\varepsilon$0=5014, kp=0.56, d31=250$\times$10-12m/V) in 4.5Pb(Zn1//3Nb2/3)O3-40.5Pb(Ni1/3Nb2/3)O3-55PZT composition sintered at 125$0^{\circ}C$ and then decreased again due to the phase boundary movement for tetragonal phase of the solid solution of Zn2+ amount.