• 센서학회지
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• 제11권3호
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• pp.155-162
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• 2002

CO 기체 감지 특성을 향상시키기 위해서 3 mol% ZnO를 첨가한 $SnO_2$와 3mol% $SnO_2$를 첨가한 ZnO의 적층 형태를 변화시켜 연구하였다. 적층 구조는 단일층, 복층, 그리고 이종층 구조로 후막 인쇄법을 사용하여 제작하였다. $SnO_2$-ZnO계에서 제 2상은 발견되지 않았다. 전도성은 $SnO_2$에 ZnO를 첨가하면 감소하고, ZnO에 $SnO_2$를 첨가하면 증가하였다. 측정 온도증가와 CO 기체 유입으로 전도성은 증가하였다. 단층 및 복층의 후막센서 구조의 감도 향상은 없었으나, $SnO_2$ 3ZnO-ZnO $3SnO_2$/substrate 구조의 이종층 센서의 감도는 향상되었다. 센서 구조에 관계없이 I-V 변화는 모두 직선성을 나타내서 Ohmic 접합 특성을 이루고 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.27-29
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• 2005

ZnO and phosphorus doped ZnO thin films (ZnO:P) are deposited by pulsed laser deposition grown on (001) $Al_{2}O_{3}$. ZnO/ZnO:P/ZnO/$Al_{2}O_{3}$ (multi-layer) structure was used for phosphorus doped ZnO fabrication. This multi-layer structure thin film was annealed at $400^{\circ}C$ for 40 min. The electron concentration of that was changed from $10^{19}$ to $10^{16}/cm^{-3}$ after annealing. ZnO thin films with encapsulated structure showed the enhanced structural and optical properties than phosphorus doped ZnO without encapsulated layer. In this study, encapsulated ZnO structure was suggested to enhance electrical, structural and optical properties of phosphorus doped ZnO thin film and it was identified that encapsulated structure could be used to fabricate high quality phosphorus doped ZnO thin film.

• Journal of Veterinary Science
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• 제24권1호
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• pp.3.1-3.13
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• 2023

Background: Zinc (Zn) is an essential cofactor for physiological homeostasis in the body. Zn oxide (ZnO), an inorganic compound that supplies Zn, exists in various sizes, and its bioavailability may vary depending on the size in vivo. However, comparative studies on the nutritional effects of micro-sized ZnO (M-ZnO) and nano-sized ZnO (N-ZnO) supplementation on Zn deficiency (ZnD) animal models have not been reported. Objectives: This study investigated the nutritional bioavailability of N-ZnO and M-ZnO particles in dietary-induced ZnD mice. Methods: Animals were divided into six experimental groups: normal group, ZnD control group, and four ZnO treatment groups (Nano-Low, Nano-High, Micro-Low, and MicroHigh). After ZnD induction, N-ZnO or M-ZnO was administered orally every day for 4 weeks. Results: ZnD-associated clinical signs almost disappeared 7 days after N-ZnO or M-ZnO administration. Serum Zn concentrations were higher in the Nano-High group than in the ZnD and M-ZnO groups on day 7 of ZnO treatment. In the liver and testis, Nano-Low and Nano-High groups showed significantly higher Zn concentrations than the other groups after 14-day treatment. ZnO supplementation increased Mt-1 mRNA expression in the liver and testis and Mt-2 mRNA expression in the liver. Based on hematoxylin-and-eosin staining results, N-ZnO supplementation alleviated histological damage induced by ZnD in the testis and liver. Conclusions: This study suggested that N-ZnO can be utilized faster than M-ZnO for nutritional restoration at the early stage of ZnD condition and presented Mt-1 as an indicator of Zn status in the serum, liver, and testis.

• 청정기술
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• 제21권1호
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• pp.39-44
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• 2015

본 연구에서는 다섯 종의 씨앗(춘채, 아욱, 양배추, 배추, 당근)을 이용하여 금속산화물 나노입자(CuO, NiO, Fe₂O₃, Co₃O₄, TiO₂, ZnO)들이 씨앗발아와 발아지수에 미치는 영향을 조사하였다. CuO, ZnO, NiO 나노입자는 씨앗 활성에 뚜렷한 독성 영향을 나타내었으며, 나노입자종류에 따라 상이한 민감도를 나타내었다. 각 나노입자에 대한 독성순서(EC₅₀ 범위)는 다음과 같다: CuO 6~27 mg/L > ZnO 16~86 mg/L > NiO 48~112 mg/L. 나머지 조사 대상 나노입자인 Co₃O₄, TiO₂, Fe₂O₃은 최대 1,000 mg/L 높은 농도 노출에도 뚜렷한 영향을 나타내지 않았다. 씨앗별 상이한 민감도를 나타내었으며, 가장 민감한 종인 아욱의 씨앗발아 EC₅₀은 CuO 5.5 mg/L ZnO 16.4 mg/L, NiO 53.4 mg/L로 조사되었다. 씨앗별 나노입자에 대한 독성 영향은 CuO > ZnO > NiO > Fe₂O₃ ≈ Co₃O₄ ≈ TiO₂ 나타났으나, 당근씨앗은 NiO [EC₅₀ 80.4(71.41~90.54) mg/L]와 ZnO [EC₅₀ 85.8(69.31~106.29) mg/L]가 유사한 독성을 나타내었다.

• 한국세라믹학회지
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• 제37권4호
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• pp.314-319
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• 2000

Microstructueral development and electrical properties in ZnO-Bi2O3-ZnAl2O4 system were investigated with ZnAl2O4 content(0.1~1.0 mol%). The shrinakge of specimens started around $700^{\circ}C$ and finished at 110$0^{\circ}C$, reaching a maximum shrinkage rate at 80$0^{\circ}C$. The shrinkage rate is strongly related to the fromation of a Bi-rich liquid. The increase of the ZnAl2O4 content inhibited the grain growth of ZnO. Most of ZnAl2O4 particles located at the grain boundaries were about 2~3${\mu}{\textrm}{m}$. ZnO grain size changed little up to 110$0^{\circ}C$, but increased markedly above 115$0^{\circ}C$, especially at lower ZnAl2O4 content. Drastic decreasing in breakdown voltage(Vb) with increasing temperature is expected to be dependent on the ZnO grain size and the distribution of the largest grains between the electrode. The nonlinear I-V characteristic was significantly influenced by the ZnAl2O4 content, which exhibited a maximum value at about 15${\mu}{\textrm}{m}$ of ZnO grain size.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• 한국세라믹학회지
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• 제38권12호
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• pp.1093-1096
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• 2001

ZnO내 $Al_2$ $O_3$의 고용은 $Al^{3+}$ 의 ZnO 결정의 $Zn^{2+}$자리, 즉 wurtizite 구조에서 4개의 산소가 만드는 4면체 공간자리로서 치환반응으로 정의될 수 있다. 이 반응은 아연-빈자리 혹은 산소-빈자리와 연관되어 일어나므로 ZnO의 비화학량론성 및 결정결함반응들과 상관관계를 가진다. 이러한 상호연관성은 아연-빈자리 및 산소분압(P $o_2$) 의존성을 낳으며, 결과적으로 ZnO내 Al 용해도([Al/sug zn/]$_{max}$)의 산소분압 의존성을 야기한다. 본 논문은 ZnO내에 Al의 용해도는 산소분압이 증가하면 감소한다는 것을 처음으로 곗나하여 보고한다. [A $l_{zn}$ ]$_{max}$ $P_{o2}$$^{-1}$4/./.

• 한국재료학회지
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• 제7권4호
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• pp.354-360
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• 1997

페르브스카이트 구조를 갖는 CaTiO$_{3}$-La(Zn$_{1}$2/Ti$_{1}$2)O$_{3}$계에서 소결 온도와 소결 시간의 증가에 따른 ZnO의 휘발과 이에 따른 고주파 유전 특성에 대하여 조사하였다. 시편 내부를 WDS 분석한 결과 위치에 따른 ZnO의 농도차를 관찰할 수 있었고, 시편의 두께를 달리하여 Qxf$_{o}$ 값을 조사한 결과 ZnO가 많이 휘발된 가장자리에서 더 높은 Qxf$_{o}$ 값을 얻을 수 있었다. 0.535CaTiO$_{3}$-0. 465La(Zn$_{1}$2/Ti$_{1}$2/)O$_{3}$몰비로 155$0^{\circ}C$, 2시간동안 합성한 결과 소결 밀도 5.31g/㎤, 유전율 50, Qxf$_{0}$34,000, 온도계수 +8ppm/$^{\circ}C$의 고주파 유전 특성을 갖는 소결체를 얻을 수 있었다.

• 한국세라믹학회지
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• 제34권9호
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• pp.949-956
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• 1997

With the increase of ZnO content, burnability of raw materials was improved and the formation of clinker minerals was accellerated. When ZnO was added 1wt%, the clinkering temperature was decreased about 30~5$0^{\circ}C$. As an increase of ZnO added, aluminate phase was decreased and ferrite phase was increased. When ZnO was added more than 3.0wt.%, the new phases, such as ZnO.Al2O3 and ZnO.Fe2O3 were formed. In the excess of amount of ZnO added, the decomposition of alite phase was intensed and the lamella structure in belite could not be observed due to the decomposition.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 추계학술대회 논문집
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.