• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.

• Advances in Energy Research
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• v.2 no.2
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• pp.97-104
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• 2014

A co-spray deposition technique has been developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e., the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with F and Al have been successfully synthesized, in which F is incompatible with Al. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, $NH_4F$. The second solution contained the Zn and Al precursors, $Zn(O_2CCH_3)_2$ and $AlCl_3$. The deposition was carried out at $500^{\circ}C$ on soda-lime glass in air. A minimum sheet resistance, $55.4{\Omega}/{\square}$, was obtained for Al and F codoped ZnO films after vacuum annealing at $400^{\circ}C$, which was lower than singly-doped ZnO with either Al or F. The transmittance for the codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties for photovoltaic applications.

• Journal of Sensor Science and Technology
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• v.11 no.2
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• pp.118-123
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• 2002

$ZnGa_2O_4$ thin film phosphors have been deposited using a pulsed laser deposition technique on $Al_2O_3$(0001) substrates at a substrate temperature of $550^{\circ}C$ with various oxygen pressures 100, 200 and 300 mTorr. The films grown under different growth oxygen pressures have been characterized using microstructural and luminescent measurements. The different photoluminescence (PL) characteristics with the increase in oxygen pressures may result from the change of the crystallinity and the composition ratio of Zn and Ga in the films. The luminescent spectra show a broad band extending from 300 to 600 nm peaking at 460 nm. The PL brightness data obtained from the $ZnGa_2O_4$ films grown under optimized conditions have indicated that the sapphire is a promising substrate for the growth of high quality $ZnGa_2O_4$ thin film phosphor.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.799-808
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• 1995

Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

• New & Renewable Energy
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• v.2 no.3
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• pp.31-36
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• 2006

Superstrate pin amorphous silicon thin-film(a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides(TCO) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage VOC than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer(${\mu}c-Si:H$) between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{OC}$ of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{OC}$ of 994mV while keeping fill factor(72.7%) and short circuit current density $J_{SC}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{OC}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.303-304
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• 2008

Al, N-codoped ZnO(ZnO:N,Al) thin films were deposited on n-type Si(100) substrate at $450^{\circ}C$ with various conditions of ambient gas$(N_2:O_2)$ by DC magnetron sputtering method using ZnO:$Al_2O_3$(2wt%) as a target, and then were annealed at 500, 700, $800^{\circ}C$ in $N_2$ gas for one hour. XRD patterns showed that all of the ZnO:N,Al thin films annealed at $80^{\circ}C$ grew with two peaks, which means poor crystallinity of the thin films deposited. Hall effects in Van der Pauw configuration proved that after annealing the films deposited showed low resistivity and high carrier concentration. While the films annealed at $800^{\circ}C$ showed low resistivity of $\sim10^{-2}\Omega$ cm and high carrier concentration of $\sim10^{19}cm^{-3}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.66-69
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• 1989

After reviewing previous work done on two piezoelectric thin films(PZT, ZnO), ZnO thin piezofim of 1-3UM is fabricated by sputtering on the different substrates(i. e., P+Si/N-Si, SiO2/P+Si/ N-Si, Al/SiO2/ P+Si/ N+Si). The result shows that ZnO piezofilm on the Al has the best c-axis orientation. One of applications for the ZnO piezofilm as an microvalve to control liquid flow is introduced, and which can be controlled electrically and remotely.

• The Journal of Natural Sciences
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• v.8 no.2
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• pp.111-118
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• 1996

In order to improve the chemical durability of glass in the $Na_2O$-CaO-$SiO_2$ system, it was investigated in the effect of $B_2O_3$ and ZnO addition and changing amount of each composition, $Na_2O$, $Al_2O_3$, $Li_2O$. In this minimize the change of softening point of glass was as follow.(wt%)$B_2O_3$:3.36%, ZnO:2.88%, $Na_2O$:9.93%, $Al_2O_3$, $Li_2O$:0.19%, $SiO_2$:70.56%, CaO:11.22%, $K_2O$:0.14%

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.319-320
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• 2009

In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.

• Journal of the Korean Ceramic Society
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• v.16 no.3
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• pp.142-154
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• 1979

The effects of microstructures and some additives $(CoO and Al_2O_3$) on the magnetic properties such as initial permeability, $\mu$-T curve, coercive force, and magnetic induction of MnZn ferrites have been studied. The powder was prepared by Hot Petroleum Drying Method. The basic composition of MnZn ferrites was 25.5mole % MnO, 22.0 mole% ZnO, 52.5 mole% $Fe_2O_3$. CoO in a concentration range from 0.05 to 0.5 mole% and $Al_2O_3$ from 2.5 to 7.5 mole% were added. Sintered density increased up to 97.5% of theoretical density. Permeability increased as average grain size increased, and that coercive force decreased as average grian size increased. Magnetic induction increased as sintered density increased. The variation of initial permeability with temperature in a temperature range from 0$^{\circ}$ to $60^{\circ}C$ was lowered (a flatter $\mu-T$ curve) as sintering temperature decreased. The compensation temperature To ofmagnetocrystalline anisotropy constant K1 and initial permeability varied with the species and amount of additives. When 0.05 mole% CoO was added to the basic composition, initial permeability at $15^{\circ}C$ increased from 5200 to 5900. The variation ofinitial permeability with temperature in a temperature range from 0^{\circ}to $60^{\circ}C$ was smaller (a flatter $\mu$-T curve) than that of the basic composition of Mn Zn ferrites. When 2.5 mole% $Al_2O_3$ was added, initial permeability at $15^{\circ}C$ decreased from 5200 to 3000. But the variation of initial permeability with temperature in a temperature range from 0$^{\circ}$to $60^{\circ}C$ was smaller (a flat ter $\mu-T$ curve) than when 0.05 mole% CoO was added. Experimental results showed that the conditions necessary for the occurrence of a very high permeability and a flat $\mu$-T curve were controversial even in a temperature range from $0^{\circ}$to $60^{\circ}C$.