• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.181-184
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• 2004

The green emitting phosphor, $ZnGa_2O_4:Mn$ thin film with spinel structure were deposited by rf magnetron sputtering. Thin film phosphors were heat-treated in nitrogen, vacuum and air atmosphere, respectively. The effects of the substrates, heat-treatment conditions and the sputtering parameters were investigated. The growing behavior and luminescent properties of thin films depend on the crystallinity of the substrates. The Ga/Zn atomic ratios and luminescent characteristics were dependent on the annealing conditions.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.111-111
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• 1999

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.860-864
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• 1998

We investigated the photoluminescence and the crystalline properties with Ga doping concentrations (0-12 mol%) in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}\textrm{SiO}_{4}$ green phosphors prepared by the solid state reaction. The photoluminescence was improved by a doping of Ga element in $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$ phosphors which showed the highest emission intensity and good color purity in the doping concentration of x=0.08. The emission intensity of $\textrm{Zn}_{1.98}\textrm{Mn}_{0.02}(\textrm{Si_{1-x}\textrm{Ga}_{x})\textrm{O}_{4}$(x= 0.08) phosphors was increased to 7 times with increasing the sintering temperatures from $1100^{\circ}C$ to $1400^{\circ}C$, showing the improved crystalline quality. The decay time was not affected by Ga doping concentrations with constant values around 24ms. It was found from SEM and PSA analyses that the phosphors were composed of a large number of small grains around 1-3$10\mu\textrm{m}$ with a small amounts of agglomerated particles above $10\mu\textrm{m}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.301-302
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• 2005

The $ZnGa_2O_4$:Cr phosphor was synthesized through solid-state reactions at the various molar ratio of Cr from 0.002 % to 0.01 %. The XRD patterns show that the Cr-doped $ZnGa_2O_4$ has a (311) main peak and a spinel phase. Also the emission wavelength shills from 510 to 705 nm in comparison with $ZnGa_2O_4$:Mn when Cr is doped in $ZnGa_2O_4$. These results indicate that $ZnGa_2O_4$ phosphors hold promise for potential applications in field-emission display devices with high brightness operating in full color regions.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.39.2-39.2
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.85-85
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• 1996

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.163.1-163
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• 2002

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.49.2-49
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.103-103
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• 1997

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.29-32
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• 2007

Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.