• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.185-185
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• 2009

• Korean Journal of Materials Research
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• v.5 no.3
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• pp.280-287
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• 1995

첨가제로 $Al_{2}$$O_{3}$가 포함된 ZnO 소결체가 타깃을 이용하여 RF 마그네트론 스퍼터링법으로 Al이 첨가된 ZnO박막을 증착하고, 타깃에 첨가된 $Al_{2}$$O_{3}$의 농도와 증착시 스퍼터링장치내의 기판위치에 따른 박막의 물성 변화를 고찰하였다. 타깃의 $Al_{2}$$O_{3}$ 첨가농도가 2wt%인 경우에 비저항치 8 $\times$ $10_{-3}$ $\Omega$-cm인 박막이 증차되었다. 또한 $Al_{2}$$O_{3}$가 2wt%이상 첨가된 경우는 모든 Al이 박막내부에서 Zn를 치환하여 전자주게로의 역할을 하지 못하고, 오히려 치환되지 못한 Al원자의 중성 불순물 산란효과에 의해 박막의 비저항이 증가하였다. 타깃의 마모영역 위에서 증착된 Al을 첨가한 ZnO 박막은 그 영역 KR에서 증착된 박막보다 높은 비저항값을 나타냈으며, 이는 큰 에너지를 가지는 산소입자의 충돌에 기인한 것으로 여겨진다.

• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.127-131
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• 2005

We report a nanometer scale mark formation using a $PtO_x$ thin film or a TbFeCo rare-earth transition metal film and the mechanism. The multi-layer samples($ZnS-SiO_2/PtOx/ZNS-SiO_2,\;ZnS-SiO_2/TbFeCo/ZnS-SiO_2$) were prepared with a magnetron sputtering method on a polycarbonate or a glass substrate. By laser irradiation of approximately a few nanoseconds, nanometer scale marks were fabricated. During the fabrication process, the thin films were thermally reacted or inter-diffused during the laser irradiation. 75 nm bubble marks in the PtOx multi-layer sample by an approximately 4-ns laser irradiation. Inside the bubble mark, Pt particles with a few nanometer sizes are distributed. The $50{\sim}100$ nm bubble marks in the TbFeCo multi-layer sample by a few nanosecond laser irradiations. We will report the detail structure of the samples, the bubble mark formation process and the mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.115-118
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• 2017

Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.297-298
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• 2015

우수한 열전 성능의 소자가 되기 위해서는 높은 전기 전도도 및 제백상수 그리고 낮은 열 전도도를 가져야한다. 본 연구에서는 DC 마그네트론 스퍼터링 법을 이용하여 비정질 구조를 갖는 ITZO 박막을 제작하였으며, 전기적 특성과 열전 특성을 조사하였다. 그 결과 ITO에 ZnO 첨가시 전기적 특성 및 열전 특성이 향상 되었다. 또한 비정질 구조를 가지므로 격자에 의한 열 전도도가 낮아 전체 열 전도도가 낮을 것이며 이는 높은 열전 성능 지수(ZT)를 가질 것이라 예상된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.191-191
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• 2009

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1351-1354
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• 2006

In this paper, we study the effect of substrate temperature on property of Ga doped ZnO (GZO) thin film for transparent conductive oxide (TCO).GZO thin films have been deposited on corning glass 1737 by D.C. magnetron sputtering. We investigated the structural and electrical properties of GZO films using the X-Ray Diffractometer(XRD), Field Emission Scanning Electron Microscopy(FESEM) and 4-points probe .

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.17-17
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• 2003

Semiconductors with ferromagnetism at room temperature has been actively searched for in recent years; a prospect of devices using both charge and spin continuously gives impetus to the activities. Transition metal doped oxide materials have been of particular interest. Co substituted ZnO [1] and TiO$_2$ [2] thin films, for example, were reported to show ferromagnetic properties at room temperature. However, various studies do not seem to converge on a definite picture [3,4,5]. The issue is rather fundamental: whether a system shows ferromagnetic properties at all, and in case it does, whether the system possesses a close coupling between magnetism and transport properties. In this talk, we shall assess the current status of transition metal doped oxide materials as room temperature ferromagnetic semiconductors.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.82-83
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.