• 한국환경과학회지
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• 제11권7호
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• pp.713-720
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• 2002

In order to provide the basic information on the environmental pollution of Kyungsan province, the contents of Pb, Cd, Cr, Cu, Mn and Zn in soil, stream water, aquatic sediment and groundwater were investigated, and also the values of pH, COD, $KMnO_4-C$,\;NH_3-N,\;NO_2-N,\;NO_3-N$ and $Cl^-$ of stream water and groundwater were determined. The results were as follows. The values of COD, $NH_3-N,\;NO_2-N$ and $NO_3-N$ of the stream waters were very low. The contents of Pb, Cd, Cr, Cu and Zn in the stream waters were respectively at range of $0.014~0.063 mg/{\ell},\;0.004~0.007 mg/{\ell$\mid$, 0~0.045 mg/{\ell},\;0~0.008 mg/{\ell}$\;and\;$0.001~0.175 mg/{\ell}$, and these values were much lower than those of contaminated stream water in Korea. The contents of Cd, Cr, Cu and Zn in the soils were respectively at range of 0.12~O.71 ppm, 0.88~2.65 ppm, 2.86~22.33 ppm and 3.89~26.39 ppm, and these values were much lower than those of ordinary polluted areas in Korea. The contents of Cd, Cr, Cu, As, Zn and Mn in the aquatic sediments were respectively at range of 3.05~3.81 ppm, 14.6~70.6 ppm, 13.74~61.59 ppm, 76.8~465.5 ppm, 12.56~190.83 ppm and 333.3~l188.3 ppm. The values of pH, $KMnO_4-C,\;NH_3-N$, and $NO_3-N$ of the groundwaters were respectively at range of 7.6~8.4, $0~3.95{\ell}$, 0.05~0.15 mg/{\ell}$ and 0.05~0.42 $mg/{\ell}$. The contents of Pb, Cd and Cr in the groundwaters were respectively at range of 0.015~0.061 $mg/{\ell}$, 0.O06~0.009 $mg/{\ell}$ and 0.005~0.045 $mg/{\ell}$.

• 한국세라믹학회지
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• 제47권2호
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• pp.189-194
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• 2010

Compared with organic fluorophores, semiconductor quantum dots (QDs) have the better properties such as photostability, narrow emission spectra coupled to tunable photoluminescent emissions and exceptional resistance to both photo bleaching and chemical degradation. In this work, CdSe/ZnS QDs nanobeads were prepared by the incorporation of CdSe/ZnS QDs with mesoporous silica to use as the optical probe for detecting toxic and bio- materials with high sensitivity, CdSe/ZnS core/shell QDs were synthesized from the precursors such as CdO and zinc stearate with the lower toxicity than pyrotic precursors. The QD-nanobeads were characterized by transmission electron microscopy, FL microscopy, UV-Vis and PL spectroscopy, respectively.

• 한국환경농학회지
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• 제13권2호
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• pp.131-141
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• 1994

대기오염에 따른 토양 및 식물체중의 Cd 및 Zn의 함량변화 차이를 구명하기 위하여 대기형 오염물질 방출지역으로 장항제련소 인근지역의 영향을 받는 논토양을 중심으로 1982년도, 1990년도에 표토와 심토로 구분 채취한 토양시료를 그리고 1990년도의 토양 채취지역에서 재배된 수도체 시료 중 Cd 및 Zn 함량을 분석하여 그 변화를 분석하였다. 제련소 인근지역의 토양 중 이들 중금속의 분포는 Cd이 0.09-4.42, Zn이 16.0-959.5mg $kg^{-1}$이었으며 평균함량이 1982년도 보다 1990년도에 더 많아지고 있었고 Cd의 경우 년도간에 유의한 상관성이 나타나고 있었다. 배연중심으로부터 동쪽방향이 거리가 멀어짐에 따라 Cd 및 Zn의 함량이 감소하는 변화가 뚜렷하였고, 방향별 토양 중 Cd 및 Zn의 함량은 배연으로부터 동쪽>북북동쪽>북동쪽>북쪽 순으로 작아지고 있었다. 오염반경은 동쪽이 4km, 북북동, 북동쪽의 경우는 3km로 볼 수 있었고, 표토중 Cd 및 Zn의 함량이 심토보다 많았다, 또한 이 지역의 1982년 토양 중의 Cd 및 Zn의 함량은 이들 금속의 상호간에, 이들 금속과 토양 중 Cu및 Pb함량과 그리고 토양의 유기물함량, 유효인산, CEC, 치환성 $Ca^{++}$ $Na^+$ 함량과 유의성 있는 상관관계를 나타내었다. 수도체의 경우 부위별 Cd 함량은 현미중의 함량이 가장 낮았으며, 이 양은 엽신 및 엽초중 Cd 함량의 7분의 1의 수준이었고, 엽신, 줄기 및 화서축 중 Cd함량은 토양 중 Zn, Cu, Pb 함량과 유의성 있는 상관관계를 나타내었다. 또한 엽신 중 Zn 함량은 토양 중 Cd, Cu 및 Pb 함량과 유의성 있는 상관관계를 나타내었고, 줄기 중의 Zn 함량은 토양 중 Cu와 Pb 함량과 유의성 있는 상관관계를 나타냈다. 장항제련소 지역의 현미 중 Cd의 함량은 0.05-0.25mg $kg^{-1}$, Zn의 함량은 10.5-30.9mg $kg^{-1}$ 범위였다.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.6-10
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• 2020

The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 ㎛ and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/㎡ and 41.54 mA/㎠ at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/㎡ and 2.05 mA/㎠ at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.371-371
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• 2011

본 연구에서는 황화납(PbS)과 황화카드뮴(CdS)을 감응물질로 하는 양자점 감응형 태양전지를 만들고 효율을 측정하였다. Sputter를 이용하여 고진공의 상태에서 산화아연(ZnO) film을 seed layer로 증착한 후 수열합성법으로 ZnO 나노선을 합성한다. 합성된 나노선을 successive ionic layer adsorption and reaction (SILAR) 법으로 PbS, CdS 양자점을 합성하고 이를 주사전자 현미경(SEM), X-선 회절(XRD)을 통해 확인하였다. 또한 PbS와 CdS의 co-sensitizer를 합성하고 diffused reflectance spectra (DRS)를 측정함으로써 넓은 범위의 광흡수도를 확인할 수 있었다. Co-sensitizer의 합성 방법을 달리하여 PbS/CdS를 합성한 후 각각의 효율을 측정해보고, 더 높은 효율을 내기 위한 방안에 대해 고찰하였다.

• 전기학회논문지P
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• 제58권4호
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• pp.615-618
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• 2009

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin film on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 800 [W]. Sheet resistance and surface roughness of ITO and ZnO thin film were measured by Hall-effect measurement system and AFM, respectively. The sheet resistance of ITO and ZnO thin film were 7.290 [$\Omega$] and 4.882 [$\Omega$], respectively. and surface roughness were 3.634 [nm] and 0.491 [nm], respectively. Green OLED was fabricated with the structure of TPD(400 [$\AA$])/Alq3(600 [$\AA$])/LiF(5 [$\AA$])/Al(1200 [$\AA$]). Turn-on voltage of green OLED applied ITO was 7 [V] and luminance was 7,371 [$cd/m^2$]. And, Turn-on voltage of green OLED applied ZnO was 14 [V] and luminance was 6,332 [$cd/m^2$].

• 한국재료학회지
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• 제30권10호
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of Ecology and Environment
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• 제30권3호
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• pp.257-264
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• 2007

Over-expression of a copper/zinc superoxide dismutase (Cu/ZnSOD) resulted in substantially increased tolerance to cadmium exposure in Arabidopsis thaliana. Lower lipid peroxidation and $H_2O_2$ accumulation and the higher activities of $H_2O_2$ scavenging enzymes, including catalase (CAT) and ascorbate peroxidase (APX) in transformants (CuZnSOD-tr) compared to untransformed controls (wt) indicated that oxidative stress was the key factor in cadmium tolerance. Although progressive reductions in the dark-adapted photochemical efficiency (Fv/Fm) and quantum efficiency yield were observed with increasing cadmium levels, the chlorophyll fluorescence parameters were less marked in CuZnSOD-tr than in wi. These observations indicate that oxidative stress in the photosynthetic apparatus is a principal cause of Cd-induced phytotoxicity, and that Cu/ZnSOD plays a critical role in protection against Cd-induced oxidative stress.

• 한국환경농학회지
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• 제13권2호
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• pp.142-150
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• 1994

수질오염에 따른 Cd 및 Zn의 함량변화 차이를 구명하기 위하여 도시하수 및 공단배출수의 영향을 받는 만경강 유역의 논토양을 중심으로 1982년도와 1990년도에 표토와 심토로 구분하여 채취한 토양시료를 그리고 1990년도의 토양시료 채취지역에서 재배된 수도체 시료중 Cd 및 Zn 함량을 분석하여 그 변화를 분석하였다. 만경강 유역의 토양 중 이들 중금속 분포는 Cd이 0.38-1.17, Zn이 33.8-464.6mg $kg^-$이었다. 년도별 함량변화에서 Cd 함량은 1990년도 토양이 1982년도 보다 낮았고, Zn 함량은 반대로 1982년도 토양이 1990년도 토양 보다 낮았다. Cd의 경우 도시하수 및 공장폐수 배출지로부터 거리별 변화가 분명하지 않았으나, 토양의 유기물함량, 유효규산, CEC, 치환성 $Ca^{++}$ 함량과 유의성 있는 상관관계를 나타내었다. 또한 이 지역의 토양 중 Cd 함량은 1982년도 심토 중 Cd 함량은 토양 중 Zn, Cu 및 Pb 함량과 유의한 상관관계를 나타내었다. Zn의 경우는 거리가 멀 수록 그 함량이 낮아지는 경항이 있었으며, 1982년도 토양 중에서 유기물 함량과 치환성 $Ca^{++}$ 함량과, 그리고 년도에 관계없이 토양 중 Cu와 Pb 함량과 유의성있는 상관관계를 나타내었다. 한편 이 지역의 수도체 부위별 Cd 함량은 현미중 농도에 비해 엽신 중의 농도가 최고 7배 이상이 되었고, Zn의 경우는 엽신과 화서축 중에서 흡수축적량이 높았으며, 토양 중 Zn, Cu, Pb의 존재는 수도체의 화서축 중의 Cd 함량과 또 수도체의 모든 부위별 Zn 함량과 유의성 있는 상관관계를 나타내었다. 만경강유역의 현미 중 Cd의 함량은 0.10-0.90mg $kg^{-1}$이었고, Zn의 함량은 4.2-95.9mg $kg^{-1}$ 범위였다.

• Nuclear Engineering and Technology
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• 제51권3호
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• pp.731-737
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• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.