• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.62-62
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• 2007

ZnO 박막이 성장된 Si기판을 이용하여 Thermal evaporation을 사용하여 온도에 따라 합성된 1-D의 구조의 ZnO nanorods의 형상과 특성에 대하여 연구를 하였다. 합성온도는 $700^{\circ}C{\sim}900^{\circ}C$를 사용하였고 온도가 낮아짐에 따라 Vertical한 1-D ZnO가 합성이 되는 것을 알 수 있었다. 특히, $700^{\circ}C$에서 합성된 1-D ZnO는 ~100nm의 폭을 가지고 800nm의 길이의 Nanorods로 성장이 되는 것을 알 수 있었고, 상온 PL측정을 통해 온도가 증가함에 따라 O 결핍 또는 Zn의 과잉에 의한 Deep level emission이 증가하는 것을 알 수 있었다.

• 한국세라믹학회지
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• 제20권3호
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• pp.236-242
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• 1983

The purpose of present study is to find the structures physical properties and their inter-relations in the system of (60-x) PbO.xMO.$40B_2O_3$ glasses where MO represents for ZnO and CdO. The experiments such as differential thermal analysis infrared spectral analysis X-ray diffraction analysis density and thermal expansion measurements have been done. From infrared spectral analysis the structural units of glasses and the corresponding crystallized glasses were com-posed of $BO_3$ triangles and $BO_4$ tetrahedra. These basic units found in $PbO-B_2O_3$ binary glass system did not charge even though the divalent metallic oxides were substituted for PbO. The structures of these ternary glasses were more coalescenced than $PbO-B_2O_3$ binary glass system. This fact was supported bydecrease in thermal expansion coeffici-ent and molar volume with substitution of divalent metallic oxide for PbO. Crystalline phases obtained from the heat treatment of the $PbO-ZnO-B_2O_3$ glasses were 4PbO.2ZnO.$5B_2O_3$ PbO.2ZnO.$B_2O_3$ and unknown phases.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.149-149
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• 2005

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.55-56
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• 2007

여러 가지 응용분야에서 많은 기대를 안고 있는 ZnO를 MOCVD 장비를 이용하여 일차원의 나노막대 구조를 $330^{\circ}C$의 저온에서 성장하였다. 이러한 성장온도는 기존 나노막대 성장에 비해 낮은 온도이며, 그 특성평가로 전계방출 특성평가를 하였다.

• 센서학회지
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• 제15권2호
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

• 한국주조공학회지
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• 제20권6호
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• pp.395-399
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• 2000

The main interdendritic phase which was formed during early solidification of the ternary Mg-Zn-Ca alloys is the $Ca_2Mg_6Zn_3$ phase. The microstructure of $Mg-6wt%Zn-0.1{\sim}0.3wt%Ca$ alloys consisted of MgZn precipitates and $Ca_2Mg_6Zn_3$ phase formed around the grain boundaries. In the alloys with the highest level of Ca($Mg-6wt%Zn-0.5{\sim}0.7wt%aCa$ alloys), the microstructure revealed wholly $Ca_2Mg_6Zn_3$ phase formed around the grain boundaries. The grain size of Mg-6wt%Zn-Ca alloys decreased significantly with increase in Ca content and, at 0.5wt% Ca or more, grain size becomes constant at about 60 ${\mu}m$. The tensile properties of the as-cast Mg-6wt%Zn-Ca magnesium alloys were improved due to grain refinement by addition of Ca.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• 한국재료학회지
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• 제8권1호
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• pp.33-37
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• 1998

Sn-Zn계 solder에서 Zn함량의 변화에 따른 납땜성을 납땜분위기 및 용제를 달리하여 연구하였다. 계면에서의 미세조직 관찰은 열처리온도를 8$0^{\circ}C$와 10$0^{\circ}C$로 달리하여 100일간 열처리한 후 관찰하였다. 젖음성 측정 결과, Zn함량이 증가함에 따라 젖음성은 감소하였고 RMA-용제를 사용한 경우가 R-용제를 사용한 경우에 비해 젖음성이 향상되었다. Sn-9Zn의 접촉각은 약 45도이고, 공기중에서 보다 질소 분위기에서 납땜한 경우가 젖음성 개선을 나타냈다. Sn-9Zn땝납과 Cu기판에서의 계면반응을 XRD, EDS로 분석한 결과 계면화합물은 r상(Cu$_{5}$Zn$_{3}$)으로 구성되어 있음을 알 수 있으며, 시효처리에 따라 접합부의 solder쪽에는 Zn상의 고갈이 나타남을 확인할 수 있었다.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.13-17
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• 2006

The one-dimensional ZnO nanostructures prepared through thermal evaporation under various cooling down procedures by changing the flow rates of the carrier gas and the reactive gas were investigated. The nanorod structures were changed into the nanonail types with a broad head through the reduction of the flow rate of the carrier gas. The decrease of the reactive gas reduced the length of the nail heads due to the limited mass transport of reactive gas. The intensity ratio of the ultraviolet emission/green emission of photoluminescence was proportional to the length of the broad head showing a larger surface area. The vertically aligned nanostructures were grown along the [0001] direction of ZnO regardless of the aligned directions. The crystal direction of the nanostructures was determined by that of the initial ZnO crystal.