• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.184-185
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• 2006

Two-step growth to incorporate the Mg atoms in the ZnO nanorods fabricate by thermal evaporation process and also utilized the ZnO film as a template. In the first step of low temperature, Zn seed metals with low melting temperature formed the droplet, and then MgZnO ternary nanorods were grown by injecting oxygen and evaporating Mg atoms in high temperature process of the second step. The vertical growth of the MgZnO nanorods with large-area distribution and uniformity was successfully performed on the ZnO template. We investigated the shape of the vertically grown 1-D MgZnO nanorods and characterized the optical and crystal properties. We confirmed the incorporation of Mg atoms by the EDS and PL spectrum.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.143-144
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• 2007

저온 성장이 가능한 MOCVD를 이용하여 단결정 p-Si 기판위에 n-ZnO를 산소분압을 달리하여 성장하였다. 산소유량에 따른 이종접합 다이오드의 전기적 특성을 평가하기위하여 n-ZnO의 전기전도도, 이동도, 캐리어 농도를 측정하였으며, 소자에 저항성 접촉(ohmic contact) 전극을 형성하여 전류-전압 특성을 파악하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.59-59
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• 2010

ZnO는 II-VI 족 화합물 반도체로써 상온에서 큰 엑시톤 결합에너지 (~60 meV) 를 가지며 밴드갭이 3.37 eV인 직접 천이형 반도체로 잘 알려진 물질이다. 이러한 ZnO의 물리적 특성은 광학소자로 상용화된 GaN와 유사하기 때문에 LED나 LD등의 광 소자 재료로 주목 받고 있다. 또한 ZnO는 3족 원소 (In, Ga, Al)를 도핑 함으로써 전기적 특성 제어가 가능한 장점을 가지고 있다. 본 연구는 펄스레이저 증착법 (Pulsed Laser Deposition)을 이용하여 Si (111) 기판 위에 ZnO:In 박막을 성장 시켰으며, 도핑된 indium 양에 따른 ZnO 박막의 배향성 변화를 관찰 하였다. X-선 회절 분석법 (X-ray diffraction), 탐침형 원자현미경 (Atomic Force Microscope) 그리고 투과전자 현미경 (Transmission Electron Microscope)을 측정하였다. XRD 측정 결과 un-doped ZnO 박막은 (002) 방향으로 c-축 우선성장 하였다. 그러나 ZnO 박막내의 Indium 양이 증가 할수록 (002) 방향에서 (101), (102), (103) 등의 (101) 방향으로 성장이 변화 하였으며 5 at.% 이상에서는 (100) 방향의 성장이 관찰 되었다. TEM 측정 결과 un-doped ZnO 박막은 columnar 구조로 성장 되었으나, Indium 양이 증가할수록 column의 size가 감소하며, 5 at.% 이상에서 columnar 구조 성장이 거의 관찰되지 않는다. AFM 결과에서는 Indium 양이 증가 할수록 박막의 표면거칠기와 결정립 크기가 감소하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.656-661
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• 2005

The effects of gas atmosphere and in-situ thermal annealing in buffet layers on the characteristic of the ZnO grown by RF magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown at the gas atmospheres of the mixed $Ar/O_2$ and the in-situ thermal treatment of the ZnO buffer layer improved the structural and optical properties. In addition, the ZnO films on the buffer layer thermal-annealed at $N_2$ gas ambience showed the strong emission of the near band gap exciton with narrow linewidth by combining the high-temperature growth of the ZnO film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.108-109
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• 2006

ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical properties. In particular, ZnO based 1D nanowires and nanorods have received intensive attention because of their potential applications in various fields. We grew ZnO buffer layers prior to the growth of ZnO nanorods for the fabrication of the vertically well-aligned ZnO nanorods without any catalysts. The ZnO nanorods were grown on Si (111) substrates by vertical MOCVD. The ZnO buffer layers were grown with various thicknesses at $400^{\circ}C$ and their effect on the formation of ZnO nanorods at $300^{\circ}C$ was evaluated by FESEM, XRD, and PL. The synthesized ZnO nanorods on the ZnO film show a high quality, a large-scale uniformity, and a vertical alignment along the [0001]ZnO compared to those on the Si substrates showing the randomly inclined ZnO nanorods. For sample using ZnO buffer layer, 1D ZnO nanorods with diameters of 150-200 nm were successively fabricated at very low growth temperature, while for sample without ZnO buffer the ZnO films with rough surface were grown.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.250-255
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• 2007

The alloying effects on the electronic structures of Zinc are investigated using the relativistic $DV-X{\alpha}molecular$ orbital method in order to obtain useful information for alloy design. A new parameter which is the d obital energy level(Md) and the bonder order(Bo) of alloying elements in Zinc was introduced and used for prediction of the mechanical properties. The Md correlated with the atomic radius and the electronegativity of elements. The Bo is a measure of the strength of the covalent bond between M and X atoms. First-principles calculations of electronic structures were performed with a series of models composed of a MZn18 cluster and the electronic states were calculated by the discrete variational- $X{\alpha}method$ by using the program code SCAT. The central Zinc atom(M) in the cluster was replaced by various alloying elements. In this study energy level structures of pure Zinc and alloyed Zinc were calculated. From calculated results of energy level structures in MZn18 cluster, We found Md and Bo values for various elements of Zn. In this work, Md and Bo values correlated to the tensile strength for the Zn. These results will give some guide to design of zinc based alloys for high temperature applications and it is possible the excellent alloys design.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.36.2-36.2
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.67.1-67.1
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.69.2-69.2
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.45.1-45.1
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• 2007