• Journal of the Korean Magnetics Society
• /
• v.15 no.1
• /
• pp.1-6
• /
• 2005

In this study we investigate the electronic structure and magnetism of transition metal (TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag ) deped ZnO($TM_{0.25}Zn_{0.75}O$), which are expected to have Curie temperature. Full-potential Linearized Augmented Plane Wave(FLAPW) metod is adopted with exchange-correlation potential expressed as general gradient approximation(GGA). The calculated magnetic moments of ($TM_{0.25}Zn_{0.75}O$) are 0.83, 3.03, 4.03, 3.48, 2.47, 1.56, 0.43, 0.75, 0.01 ${\mu}_B$ for TM = Ti, Cr, Mn, Fe, Co, Ni, Ru, Pd, Ag, respectively. The nearest neighbor O atom to the transition metal is calculated to have a significant magnetic moment of about 0.1${\mu}_B$, ?? 새 strong hybridization between O-p and TM-d bands. As the results, the systems may have larger magnetic moments in total, compared to the corresponding isolated atoms. The 3d TM doped systems exhibit the half-metallic character except Co, wheres the 4d TM doped systems behave like normal metals and low spin polarization at the Fermi levels.

• Journal of Sensor Science and Technology
• /
• v.6 no.6
• /
• pp.476-482
• /
• 1997

A portable electronic nose system has been fabricated and characterized using an oxide semiconductor gas sensor array and pattern recognition techniques such as principal component analysis and back-propagation artificial neural network. The sensor array consists of six thick-film gas sensors whose sensing layers are Pd-doped $WO_{3}$, Pt-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$ + Pd coated layer, $Al_{2}O_{3}$-doped ZnO and $PdCl_{2}$-doped $SnO_{2}$. The portable electronic nose system consists of an 16bit Intel 80c196kc as CPU, an EPROM for storing system main program, an EEPROM for containing optimized connection weights of artificial neural network, an LCD for displaying gas concentrations. As an application the system has been used to identify 26 carbon monoxide/hydrocarbon (CO/HC) car exhausting gases in the concentration range of CO 0%/HC 0 ppm to CO 7.6%/HC 400 ppm and the identification has been successfully demonstrated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.178.1-178.1
• /
• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.26-27
• /
• 2008

본 연구는 투명전도성전극(TCO)인 ITO를 대체하기 위해 ZnO에 $Al_2O_3$, $SiO_2$, $TiO_2$의 불순물을 도핑하여 박막의 전기적 및 광학적 특성에 관한 연구를 하였다. 불순물 도핑은 2wt.%로 진행 하였고, 동일한 전압과 두께로 그 특성을 비교 하였으며, 특성으로는 UV-Vis를 이용한 광투과율 측정과 광투과율을 이용한 박막의 광학적 밴드갭과 굴절률을 계산 하였다. 전기적 특성으로는 4-Point Probe로 면저항과 비저항값을 측정하였다.

• Advances in environmental research
• /
• v.3 no.1
• /
• pp.11-28
• /
• 2014

Advanced oxidation processes using UV and catalysts like $TiO_2$ and ZnO have been recently applied for the photocatalytic degradation of MTBE in water. Attempts have been made to replace the UV radiation by the solar spectrum. This review intends to shed more light on the work that has been done so far in this area of research. The information provided will help in crystallizing the ideas required to shift the trend from UV photocatalysis to sunlight photocatalysis. The careful optimization of the reaction parameters and the type of the dopant employed are greatly responsible for any enhancement in the degradation process. The advantage of shifting from UV photocatalysts to visible light photocatalysts can be observed when catalysts like $TiO_2$ and ZnO are doped with suitable metals. Therefore, it is expected that in the near future, the visible light photocatalysis will be the main technique applied for the remediation of water contaminated with MTBE.

• Journal of Sensor Science and Technology
• /
• v.9 no.1
• /
• pp.36-43
• /
• 2000

In oder to enhance the selectivity of TMA(trimethylamine) gas, the ZnO-based films which were doped with $Al_2O_3$, $TiO_2, $In_2O_3$ and $V_2O_5$ catalysts with various weight percents were deposited in oxygen by RF magnetron sputtering method. To improve electrical stability of sensors, the ZnO-based films were annealed in oxygen at $700^{\circ}C$ for 1 hour. The TMA selectivity of sensors was defined by the magnitude($S_{TMA}/S_{DMA}$ and $S_{TMA}/S_{NH3}$) of TMA sensitivity relative to DMA and sensitivity ammonia($NH_3$) sensitivity, respectively. The $ZnO+Al_2O_3(4\;wt.%)+TiO_2(1\;wt.%)+In_2O_3(1\;wt.%)$ sensor showed high $S_{TMA}/S_{DMA}$ of 5.9 and $S_{TMA}/S_{NH3}$ of 26 to 160 ppm at the working temperature of $300^{\circ}C$ respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2016.11a
• /
• pp.199-199
• /
• 2016

Commercially pure titanium (cp-Ti) and Ti alloys (typically Ti-6Al-4V) display excellent corrosion resistance and biocompatibility. Although the chemical composition and topography are considered important, the mechanical properties of the material and the loading conditions in the host have, conventionally. Ti and its alloys are not bioactive. Therefore, they do not chemically bond to the bone, whereas they physically bond with bone tissue. The electrochemical deposition process provides an effective surface for biocompatibility because large surface area can be served to cell proliferation. Electrochemical deposition method is an attractive technique for the deposition of hydroxyapatite (HAp). However, the adhesions of these coatings to the Ti surface needs to be improved for clinical used. Plasma electrolyte oxidation (PEO) enables control in the chemical com position, porous structure, and thickness of the $TiO_2$ layer on Ti surface. In addition, previous studies h ave concluded that the presence of $Ca^{+2}$ and ${PO_4}^{3-}$ ion coating on porous $TiO_2$ surface induced adhesion strength between HAp and Ti surface during electrochemical deposition. Silicon (Si) in particular has been found to be essential for normal bone and cartilage growth and development. Zinc (Zn) plays very important roles in bone formation and immune system regulation, and is also the most abundant trace element in bone. The objective of this work was to study electrochemical characteristcs of Zn and Si coating on Ti-6Al-4V by PEO treatment. The coating process involves two steps: 1) formation of porous $TiO_2$ on Ti-6Al-4V at high potential. A pulsed DC power supply was employed. 2) Electrochemical tests were carried out using potentiodynamic and AC impedance methoeds. The morphology, the chemical composition, and the micro-structure an alysis of the sample were examined using FE-SEM, EDS, and XRD. The enhancements of the HAp forming ability arise from $Si/Zn-TiO_2$ surface, which has formed the reduction of the Si/Zn ions. The promising results successfully demonstrate the immense potential of $Si/Zn-TiO_2$ coatings in dental and biomaterials applications.

• Korean Journal of Materials Research
• /
• v.20 no.5
• /
• pp.235-240
• /
• 2010

We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.200-200
• /
• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.3
• /
• pp.204-208
• /
• 2012

$TiO_2$ ($Ti_{1-x}Nb_xO_2$, x= 0.04~0.06) transparent conducting oxide film was fabricated by RF magnetron sputtering process and their electrical, optical, stability properties were studied. When the Nb 4 at% sputtering target was used with RF power 120 W, pressure 8 mTorr, post-annealing temperature $600^{\circ}C$, the resistivity of TNO film was $4{\times}10^{-4}\;{\Omega}-cm$. The optical transmittance in the visible wavelength was ca. 86%. TNO films require heat treatment during or after the deposition process. When the film was deposited at room temperature and post-annealed at $600^{\circ}C$, the lowest resistivity was obtained. When the TNO film was exposed to high temperature and humidity, the resistivity of the film was rather decreased. The stability to temperature and humidity implies that the TNO film could be a appropriate candidate for In-free, ZnO-free transparent conducting oxide materials.